FR1419209A - Procédé pour provoquer la croissance épitaxiale des monocristaux semi-conducteurs - Google Patents

Procédé pour provoquer la croissance épitaxiale des monocristaux semi-conducteurs

Info

Publication number
FR1419209A
FR1419209A FR165A FR165A FR1419209A FR 1419209 A FR1419209 A FR 1419209A FR 165 A FR165 A FR 165A FR 165 A FR165 A FR 165A FR 1419209 A FR1419209 A FR 1419209A
Authority
FR
France
Prior art keywords
epitaxial growth
single crystals
semiconductor single
causing epitaxial
causing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR165A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of FR1419209A publication Critical patent/FR1419209A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B41/00—Obtaining germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR165A 1963-12-31 1964-12-29 Procédé pour provoquer la croissance épitaxiale des monocristaux semi-conducteurs Expired FR1419209A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US334859A US3297501A (en) 1963-12-31 1963-12-31 Process for epitaxial growth of semiconductor single crystals

Publications (1)

Publication Number Publication Date
FR1419209A true FR1419209A (fr) 1965-11-26

Family

ID=23309173

Family Applications (1)

Application Number Title Priority Date Filing Date
FR165A Expired FR1419209A (fr) 1963-12-31 1964-12-29 Procédé pour provoquer la croissance épitaxiale des monocristaux semi-conducteurs

Country Status (5)

Country Link
US (1) US3297501A (de)
AT (1) AT261675B (de)
DE (1) DE1282613B (de)
FR (1) FR1419209A (de)
GB (1) GB1056919A (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1458474A1 (de) * 1963-12-21 1968-12-19 Siemens Ag Verfahren zur Darstellung von intermetallischen supraleitenden Verbindungen
US3502516A (en) * 1964-11-06 1970-03-24 Siemens Ag Method for producing pure semiconductor material for electronic purposes
DE1544259A1 (de) * 1965-02-05 1970-07-09 Siemens Ag Verfahren zum Herstellen von gleichmaessigen epitaktischen Aufwachsschichten
US3338761A (en) * 1965-03-31 1967-08-29 Texas Instruments Inc Method and apparatus for making compound materials
US3635771A (en) * 1968-05-21 1972-01-18 Texas Instruments Inc Method of depositing semiconductor material
US3517643A (en) * 1968-11-25 1970-06-30 Sylvania Electric Prod Vapor deposition apparatus including diffuser means
US3865072A (en) * 1973-10-18 1975-02-11 Hls Ind Apparatus for chemically depositing epitaxial layers on semiconductor substrates
JPS6047202B2 (ja) * 1976-01-13 1985-10-21 東北大学金属材料研究所長 超硬高純度の配向多結晶質窒化珪素
JPS55167041A (en) * 1979-06-14 1980-12-26 Toshiba Corp Vertical type gaseous phase growth device
JPS59156996A (ja) * 1983-02-23 1984-09-06 Koito Mfg Co Ltd 化合物結晶膜の製造方法とその装置
US4949671A (en) * 1985-10-24 1990-08-21 Texas Instruments Incorporated Processing apparatus and method
US5160543A (en) * 1985-12-20 1992-11-03 Canon Kabushiki Kaisha Device for forming a deposited film
US5391232A (en) * 1985-12-26 1995-02-21 Canon Kabushiki Kaisha Device for forming a deposited film
US4854266A (en) * 1987-11-02 1989-08-08 Btu Engineering Corporation Cross-flow diffusion furnace
JPH02222134A (ja) * 1989-02-23 1990-09-04 Nobuo Mikoshiba 薄膜形成装置
US6527865B1 (en) * 1997-09-11 2003-03-04 Applied Materials, Inc. Temperature controlled gas feedthrough
US20050098107A1 (en) * 2003-09-24 2005-05-12 Du Bois Dale R. Thermal processing system with cross-flow liner
US7112541B2 (en) * 2004-05-06 2006-09-26 Applied Materials, Inc. In-situ oxide capping after CVD low k deposition
US20060021574A1 (en) * 2004-08-02 2006-02-02 Veeco Instruments Inc. Multi-gas distribution injector for chemical vapor deposition reactors
US7273823B2 (en) * 2005-06-03 2007-09-25 Applied Materials, Inc. Situ oxide cap layer development
US8741062B2 (en) * 2008-04-22 2014-06-03 Picosun Oy Apparatus and methods for deposition reactors

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE509317A (de) * 1951-03-07 1900-01-01
US2767052A (en) * 1952-06-26 1956-10-16 Eagle Picher Co Recovery of germanium from scrap materials
US2763581A (en) * 1952-11-25 1956-09-18 Raytheon Mfg Co Process of making p-n junction crystals
BE554836A (de) * 1956-02-11
DE1048638B (de) * 1957-07-02 1959-01-15 Siemens &. Halske Aktiengesellschaft, Berlin und München Verfahren zur Herstellung von Halbleitereinkristallen, insbesondere von Silizium durch thermische Zersetzung oder Reduktion
US3020129A (en) * 1958-07-25 1962-02-06 Gen Electric Production of silicon of improved purity
US3068066A (en) * 1959-03-10 1962-12-11 Ciba Ltd Process for the manufacture of double salts of niobium chloride and tantalum chloride
US3009834A (en) * 1959-10-29 1961-11-21 Jacques M Hanlet Process of forming an electroluminescent article and the resulting article

Also Published As

Publication number Publication date
GB1056919A (en) 1967-02-01
AT261675B (de) 1968-05-10
DE1282613B (de) 1968-11-14
US3297501A (en) 1967-01-10

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