US3297501A - Process for epitaxial growth of semiconductor single crystals - Google Patents

Process for epitaxial growth of semiconductor single crystals Download PDF

Info

Publication number
US3297501A
US3297501A US334859A US33485963A US3297501A US 3297501 A US3297501 A US 3297501A US 334859 A US334859 A US 334859A US 33485963 A US33485963 A US 33485963A US 3297501 A US3297501 A US 3297501A
Authority
US
United States
Prior art keywords
substrate
bed
pedestal
semiconductor
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US334859A
Other languages
English (en)
Inventor
Reisman Arnold
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to US334859A priority Critical patent/US3297501A/en
Priority to GB51325/64A priority patent/GB1056919A/en
Priority to DEJ27224A priority patent/DE1282613B/de
Priority to AT1097264A priority patent/AT261675B/de
Priority to FR165A priority patent/FR1419209A/fr
Application granted granted Critical
Publication of US3297501A publication Critical patent/US3297501A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B41/00—Obtaining germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium

Definitions

  • This invention relates to a process for epitaxially growing Si and Ge semiconductor single crystals via a polyhalide reduction process. More particularly, depending on how the process is eiected the reducible polyhalides are either unstable at room temperature, disproportionating with the liberation of the condensed semiconductor, or present as vaporous species.
  • Previously employed processes for the single crystal growth of Ge and Si can be categorized as either proceeding via disproportionation mechanisms or via reduction processes. More specically, compounds such as GeX2 where X is a halogen (e.g., C12, I2, Br2) formed at elevated temperatures are caused to disproportionate 'at some lower temperature, one of the disproportionation products being the desired semiconductor. Alternately, a compound such as GeX4 where X is usually C12 but may be I2 or Br2, which compound is stable at room temperature is volatilized and impinged on a single crystal at elevated temperatures in the presence of H2 resulting in the reduction of the tetrahalide and simultaneous deposition of the desired semiconductor.
  • halogen e.g., C12, I2, Br2
  • An alternate method for growing Ge single crystals involves the transport of GeCl4 in a hydrogen stream over a single crystal substrate heated to between 75Q-920 C. The GeCl4 is reduced for-ming Ge as one of the products; the Ge depositing upon the heated single lcrystal substrate.
  • An object of this invention is a process for epitaxially depositing Ge via polyhalide reduction process in the temperature interval SOO-920 C.
  • a further object of this invention is a process for epitaxially depositing Ge via a reduction of an in situ generated non-disproportionable Ge polyhalide.
  • Another object ⁇ of this invention is to ⁇ deposit Ge Via a reduction process from a vapor phase non-disproportionatable species which does not react appreciably with the substrate upon which Ge is to be deposited.
  • a further object lof this invention is a process for epitaxially depositing Ge via a reduction process from a vapor phase disproportionatable species which does not react appreciably with the substrate upon which the Ge is to be deposited.
  • Still another object of the invention is a process for epitaxially depositing Si via polyhalide reduction process in the temperature interval l0501250 C.
  • the ⁇ figure is a cross-sectional representation of the reaction train in which the epitaxial deposition of Ge or Si is eiiected.
  • the process of the invention utilizes as a source of reducible polyhalides of Si or Ge the products of the reactions of either a Si or Ge halide 4or pure halide or halide acid carried either in a helium yor H2 stream and a Ge or Si reaction column.
  • the reducible, disproportionatable or nondisproportionatable eiuent polyhalides are impinged on a semiconductor substrate heated to a temperature necessary to cause reduction to occur, resulting in the deposition of the semiconductor epitaxially upon the substrate. Because the reducible disproportionatable or nondisproportionatable polyhalides are in a state of equilibrium relative to a condensed Ge or Si phase when etlluing from the reaction column, they do not tend to react with the substrate, they tend only to be reduced. Consequently, substrate etching and incorporation of the etch products into the growing layer is greatly minimized. Furthermore, the temperature necessary for the reduction of the eluing Ge polyhalides is in general lower than that required for conventionally employed materials. p
  • the epitaxial layers of Si or Ge grown by Iany of the procedures constituting the process of the invention find utility in the fabrication of transistor or diode structure which may be employed in computer llogic circuits or communication equipment (such as radios).
  • He from a puried source 1 is carried through a volatile Ge or Si halide or pure halogen source 2 prefefably sich, GBCLL, C12, I2, Brz, GeBr4, Gelb SiBfb
  • the saturated gas stream containing the semiconductor halide or pure halogen emanating from the source 2 is carried through the Si or Ge packed heated bed 3 e.g. Ge: 290450 C.; Si: 70D-980 C.
  • the equilibrium products efuing from said bed through a gas disperser in inner nozzle 4 are intermixed with purified H2 emanating from a H2 source 5 which enters a reaction chamber 7 at the outer nozzle 6.
  • the gases emanating from the nozzles 4 and 6 intermix providing a semiconductor content in the vapor phase of between .25 and 1.0 mole fraction.
  • the intermixed gases are then impinged on the heated substrate 8 supported on the Si or Ge R. F. heated susceptor pedestal 9 e.g. both heated in the case of Ge to 50G-920 C. and in the case of Si t-o 1050-1250 C.
  • Reduction of the semiconductor vapor phase species occurs in the region of the substrate and pedestal, the former serving as a seed for epitaxial growth from the vapor of Si or Ge resulting from the reduction process.
  • the packed bed of Si or Ge, and the reaction chamber are heated by the resistance winding 11 and the substrate and pedestal are heated to a somewhat higher temperature by the radio frequency coil 12.
  • the temperature of the pedestal is monitored by a thermocouple contained in the thermocouple well 14 and the Volatile reaction products are exhausted via the vent 13.
  • Procedure B -Growth from nondisproportionatable reducible efuent.
  • the growth rates for Ge and Si will range between .l-.5 micron per minute on a substrate of 0.5 diameter.
  • Example II The process of Example I is repeated with the packed bed heated to 450 C. and the pedestal and substrate kept cold (i.e., at room temperature). A deposit of Ge again forms on the cool substrate. The procedure is repeated with the packed bed, reaction chamber, and pedestal all maintained at 450 C. The eluent from the packed bed neither etches the substrate nor deposits Ge upon it. As in Example I, a mirror of Ge forms in the vicinity of the exhaust portion of the apparatus. Thus, again it is shown that the eluent will not etch the Ge substrate.
  • Example IH The process of Example I is repeated using a source of SiCl., and a Si bed heated at 800 C. and the Si pedestal and Si wafer (or substrate) at room temperature. A deposit of Si forms on the wafer (or substrate). With the Si bed, reaction chamber, pedestal and substrate all at 4 800 C., the eluent from the packed bed neither etches the substrate nor deposits Si upon it.
  • Example 1V The process of Example I is repeated with the packed Si bed at 980 C. and the Si pedestal and Si wafer (or substrate) at room temperature. A deposit of Si forms on the wafer (or substrate). With the packed bed, reaction chamber, Si pedestal and Si Wafer (or substrate) at 980 C., the ei-liuent from the packed Si bed neither deposits Si on the substrate nor etches it.
  • Example II The process of Example I is repeated using GeCl4 as a source material and a packed Ge bed maintained at room temperature and a Ge pedestal and Ge single crystal substrate maintained at 300 C.
  • the Ge substrate is severely etched and a mirror of Ge forms at the colder exhaust portion of the system.
  • the pedestal and substrate are maintained at a suciently high enough temperature (500-920 C.) to cause reduction of the GeCl4 so as to deposit Ge, this Ge deposit becomes contaminated with the etchant products resulting in the formation of nonabrupt impurity concentration proles across the grown junction.
  • Example VI The process of Example VI is repeated with the packed bed of Ge heated to 450 C. and the Ge pedestal and Ge substrate maintained at room temperature. No deposit of Ge coats this substrate nor is the substrate etched nor is any condensation of any kind observed t0 form elsewhere in the system. If the packed bed, reaction chamber, pedestal and substrate are all maintained at 300 C., the efiuent from the packed bed neither etches nor deposits Ge on the Ge substrate demonstrating that the gas passing through the packed bed comes into equilibrium with this bed insofar as Ge content of the vapor is concerned. Thus, the Ge substrate is not etched.
  • Example VIII The process of Example VI is repeated except that H2 is carried through .a source of SiCl4 and then through a packed bed of Si heated to 800 C.
  • the effluent gas from this bed is intermixed with a H2 stream and is permittedto come into contact with an unheated Si pedestal and Si substrate. No deposit of Si coats this substrate nor is the substrate etched nor is any condensation of any kind observed to form elsewhere in the system. If the packed bed, reaction chamber, and pedestal are all maintained at 800 C., the effluent from the packed bed neither etches nor deposits Si on the Si substrate demonstrating that the gas passing through the packed bed comes into equilibrium with this bed insofar as Si content of the vapor is concerned. Thus, the Si substrate is not etched.
  • Example VI The process of Example VI is repeated except that H2 is carried through a source of SiCl., and then through a packed bed of Si heated to 980 C.
  • the effluent gas from this bed is intermixed with .a H2 stream and is permitted to come into contact with an unheated Si pedestal and Si substrate. No deposit of Si coats this substrate nor is the substrate etched, nor is any condensation of any kind observed to form elsewhere in the system. If the packed bed, reaction chamber, pedestal and substrate are all maintained at 980 C., the eluent from the packed bed neither etches nor deposits Si on the Si substrate, demonstrating that the gas passing through the packed bed cornes into equilibrium with this bed insofar as Si content of the vapor is concerned. Thus, the Si substrate is not etched.
  • EXAMPLE X A The process of Example VI is repeated using either SiCl4 as a source material, a packed Si bed maintained at room temperature and a Si pedestal and Si single crystal substrate maintained at 800 C.
  • the Si single crystal substrate is severely etched and a mirror of Si forms at the colder exhaust portion of the system.
  • the pedestal and substrate are maintained at a suiciently high enough temperature (1050-1250 C.) to cause reduction of SiCl4 so as to deposit Si, this Si deposit becomes contaminated with the etchant products resulting in the formation of nonabrupt impurity concentration profiles across the grown junction.
  • Example VI The process of Example VI is repeated using GeCl4 as a source material, a packed Ge bed maintained at room temperature, and a Ge pedestal and Ge single crystal substrate maintained at 300 C.
  • the Ge single crystal substrate is severely etched and a mirror of Ge forms at the colder exhaust portion of the system.
  • the pedestal and substrate are maintained at a suiciently high enough temperature (500-920 C.) to cause reduction of GeCl4 so as to deposit Ge, this Ge deposit becomes contaminated with the etchant products resulting in the formation of nonabrupt impurity concentration proboards across the grown junction.
  • EXAMPLE XI He at a ow rate of 50 cc. per minute is carried through a source of GeCl4 maintained at 25 C. and then through a packed bed of Ge heated to 300 C. The effluent gas from this bed is intermixed with a H2 stream flowing at 950 cc. per minute Iand is permitted to come into contact with a Ge single crystal substrate supported on a Ge pedestal, the substrate and pedestal being heated to 500 C. The process is continued for one hour. At the conclusion of the process, an epitaxial deposit of Ge microns thick has grown on the single crystal substrate of Ge.
  • Example XII-XVI The process of Example XI is repeated except that the packed ⁇ bed of Ge, the Ge substrate and the Ge pedestal are heated to the temperature set forth in Table I. The thickness of the epitaxial grown Ge deposit is also set forth.
  • EXAMPLE XVII He at a flow rate of 20 c-c. per minute is carried through a source of SiCl4 maintained at 25 C. and then through a packed bed of Si heated to 800 C. The efliuent gas from this bed is intermixcd with :a H2 stream iiowing at 80 cc. per minute and is permitted to come into contact with a Si single crystal substrate supported on a Si pedestal, the substrate and pedestal being heated to 1050 C. The process is continued for one hour. At the conclusion an epitaxial deposit of Si 16 microns thick has grown on the single crystal substrate of Si.
  • Example XVII The process of Example XVII is repeated except that the packed bed of Si, the Si substrate and the Si pedestal are heated to the temperature set forth in Table II. The thickness of the resulting epitaxial grown Si deposit is also set forth.
  • Example XIV-XXXI The process of Example XXIII is repeated except that the packed bed of Ge, the Ge substrate and Ge pedestal are heated to the temperature set forth in Table III. The thickness of the resulting epitaxial grown Ge deposit is also set forth.
  • EXAMPLE XXXII H2 at a flow :rate of 20 cc. per -rninute is carried through a source of SiCl4 maintained at 25 C. and then EXAMPLES XXXIII-XXXVII The process in Example XXXII is repeated except that the packed ebed of Si, the Si substrate and the Si pedestal are heated to the temperature set forth in Table IV. The thickness of the resulting epitaxial lgrown Si deposit is also set forth.
  • All of the epitaxial layers grown in the above examples may be suitably doped via the introduction of conventional gaseous doping agents into the reaction chamber enabling the formation of p-n, n-p, p+p, and n+-n structures.
  • the process of the invention provides a means lfor depositing epitaxial layers of Si or Ge through the use of disproportionatable reducible or nondisproportionatable reducible polyhalides of Ge and Si which because of the nature of their preparation are either unstable or vaporous in nature under normal -r-oom temperature conditions and which because of their method of preparation greatly minimize contamination of the growing epitaxial layer by the undesired etchant products which are a normal constituent of conventional Ge or Si reduction growth process.
  • a method of epitaxially depositing a semiconductor on a substrate comprising the steps of providing a bed of said semiconductor material, generating a non-etching semiconductor polyhalide vapor which is in equilibrium with said semiconductor material and reducing said polyhalide vapor to cause epitaxial deposition on said substrate.
  • a method according to claim 1 wherein the step of generating a semiconductor polyhalide vapor includes the step of passing a carrier gas selected from the group consisting of hydrogen and helium through a source of material selected from the group consisting of the halogens and a semiconductor halide to form a vapor of said gas and said material.
  • a method according to claim 2 further including the step of flowing said vapor of said gas and said material through said bed.
  • step of reducing includes the step of intermixing a reducing gas with said semiconductor polyhalide vapor.
  • step of :reducing includes the step of heating said semiconductor polyhalide Vapor with hydrogen to a temperature sucient to cause reduction of said polyhalide vapor
  • a method of epitaxially depositing a semiconductor on a substrate comprising the steps of: generating a non-etching semiconductor polyhalide vapor which is in equilibrium with a source of said semiconductor material at a given temperature and reducing said semiconductor polyhalide at a temperature higher than said given temperature to cause epitaxial ⁇ deposition of said semiconductor on said substrate.
  • a process of epitaxially depositing a semiconductor material on a substrate which comprises the steps of:

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
US334859A 1963-12-31 1963-12-31 Process for epitaxial growth of semiconductor single crystals Expired - Lifetime US3297501A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US334859A US3297501A (en) 1963-12-31 1963-12-31 Process for epitaxial growth of semiconductor single crystals
GB51325/64A GB1056919A (en) 1963-12-31 1964-12-17 Process for growing semiconductor crystals
DEJ27224A DE1282613B (de) 1963-12-31 1964-12-24 Verfahren zum epitaktischen Aufwaschen von Halbleitermaterial
AT1097264A AT261675B (de) 1963-12-31 1964-12-28 Verfahren zum epitaktischen Aufwachsen von Halbleitereinkristallen
FR165A FR1419209A (fr) 1963-12-31 1964-12-29 Procédé pour provoquer la croissance épitaxiale des monocristaux semi-conducteurs

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US334859A US3297501A (en) 1963-12-31 1963-12-31 Process for epitaxial growth of semiconductor single crystals

Publications (1)

Publication Number Publication Date
US3297501A true US3297501A (en) 1967-01-10

Family

ID=23309173

Family Applications (1)

Application Number Title Priority Date Filing Date
US334859A Expired - Lifetime US3297501A (en) 1963-12-31 1963-12-31 Process for epitaxial growth of semiconductor single crystals

Country Status (5)

Country Link
US (1) US3297501A (de)
AT (1) AT261675B (de)
DE (1) DE1282613B (de)
FR (1) FR1419209A (de)
GB (1) GB1056919A (de)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3338761A (en) * 1965-03-31 1967-08-29 Texas Instruments Inc Method and apparatus for making compound materials
US3425825A (en) * 1963-12-21 1969-02-04 Siemens Ag Method of producing intermetallic superconducting compounds of niobium and gallium
US3445300A (en) * 1965-02-05 1969-05-20 Siemens Ag Method of epitaxial deposition wherein spent reaction gases are added to fresh reaction gas as a viscosity-increasing component
US3502516A (en) * 1964-11-06 1970-03-24 Siemens Ag Method for producing pure semiconductor material for electronic purposes
US3517643A (en) * 1968-11-25 1970-06-30 Sylvania Electric Prod Vapor deposition apparatus including diffuser means
US3635771A (en) * 1968-05-21 1972-01-18 Texas Instruments Inc Method of depositing semiconductor material
US3865072A (en) * 1973-10-18 1975-02-11 Hls Ind Apparatus for chemically depositing epitaxial layers on semiconductor substrates
US4279689A (en) * 1976-01-13 1981-07-21 The Research Institute For Iron, Steel And Other Metals Of The Tohoku University Process for producing super hard-highly pure silicon nitrides
US4290385A (en) * 1979-06-14 1981-09-22 Tokyo Shibaura Denki Kabushiki Kaisha Vertical type vapor-phase growth apparatus
US4662981A (en) * 1983-02-23 1987-05-05 Koito Seisakusho Co., Ltd. Method and apparatus for forming crystalline films of compounds
US4854266A (en) * 1987-11-02 1989-08-08 Btu Engineering Corporation Cross-flow diffusion furnace
US4949671A (en) * 1985-10-24 1990-08-21 Texas Instruments Incorporated Processing apparatus and method
US4989541A (en) * 1989-02-23 1991-02-05 Nobuo Mikoshiba Thin film forming apparatus
US5160543A (en) * 1985-12-20 1992-11-03 Canon Kabushiki Kaisha Device for forming a deposited film
US5391232A (en) * 1985-12-26 1995-02-21 Canon Kabushiki Kaisha Device for forming a deposited film
US6527865B1 (en) * 1997-09-11 2003-03-04 Applied Materials, Inc. Temperature controlled gas feedthrough
US20050098107A1 (en) * 2003-09-24 2005-05-12 Du Bois Dale R. Thermal processing system with cross-flow liner
US20050250348A1 (en) * 2004-05-06 2005-11-10 Applied Materials, Inc. In-situ oxide capping after CVD low k deposition
US20060276054A1 (en) * 2005-06-03 2006-12-07 Applied Materials, Inc. In situ oxide cap layer development
US20090263578A1 (en) * 2008-04-22 2009-10-22 Picosun Oy Apparatus and methods for deposition reactors
US20100300359A1 (en) * 2004-08-02 2010-12-02 Veeco Instruments Inc. Multi-gas distribution injector for chemical vapor deposition reactors

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2692839A (en) * 1951-03-07 1954-10-26 Bell Telephone Labor Inc Method of fabricating germanium bodies
US2763581A (en) * 1952-11-25 1956-09-18 Raytheon Mfg Co Process of making p-n junction crystals
US2767052A (en) * 1952-06-26 1956-10-16 Eagle Picher Co Recovery of germanium from scrap materials
GB855913A (en) * 1956-02-11 1960-12-07 Pechiney Prod Chimiques Sa Improvements in or relating to the manufacture of silicon
US3009834A (en) * 1959-10-29 1961-11-21 Jacques M Hanlet Process of forming an electroluminescent article and the resulting article
US3020129A (en) * 1958-07-25 1962-02-06 Gen Electric Production of silicon of improved purity
US3068066A (en) * 1959-03-10 1962-12-11 Ciba Ltd Process for the manufacture of double salts of niobium chloride and tantalum chloride

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1048638B (de) * 1957-07-02 1959-01-15 Siemens &. Halske Aktiengesellschaft, Berlin und München Verfahren zur Herstellung von Halbleitereinkristallen, insbesondere von Silizium durch thermische Zersetzung oder Reduktion

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2692839A (en) * 1951-03-07 1954-10-26 Bell Telephone Labor Inc Method of fabricating germanium bodies
US2767052A (en) * 1952-06-26 1956-10-16 Eagle Picher Co Recovery of germanium from scrap materials
US2763581A (en) * 1952-11-25 1956-09-18 Raytheon Mfg Co Process of making p-n junction crystals
GB855913A (en) * 1956-02-11 1960-12-07 Pechiney Prod Chimiques Sa Improvements in or relating to the manufacture of silicon
US3020129A (en) * 1958-07-25 1962-02-06 Gen Electric Production of silicon of improved purity
US3068066A (en) * 1959-03-10 1962-12-11 Ciba Ltd Process for the manufacture of double salts of niobium chloride and tantalum chloride
US3009834A (en) * 1959-10-29 1961-11-21 Jacques M Hanlet Process of forming an electroluminescent article and the resulting article

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3425825A (en) * 1963-12-21 1969-02-04 Siemens Ag Method of producing intermetallic superconducting compounds of niobium and gallium
US3502516A (en) * 1964-11-06 1970-03-24 Siemens Ag Method for producing pure semiconductor material for electronic purposes
US3445300A (en) * 1965-02-05 1969-05-20 Siemens Ag Method of epitaxial deposition wherein spent reaction gases are added to fresh reaction gas as a viscosity-increasing component
US3338761A (en) * 1965-03-31 1967-08-29 Texas Instruments Inc Method and apparatus for making compound materials
US3635771A (en) * 1968-05-21 1972-01-18 Texas Instruments Inc Method of depositing semiconductor material
US3517643A (en) * 1968-11-25 1970-06-30 Sylvania Electric Prod Vapor deposition apparatus including diffuser means
US3865072A (en) * 1973-10-18 1975-02-11 Hls Ind Apparatus for chemically depositing epitaxial layers on semiconductor substrates
US4279689A (en) * 1976-01-13 1981-07-21 The Research Institute For Iron, Steel And Other Metals Of The Tohoku University Process for producing super hard-highly pure silicon nitrides
US4340568A (en) * 1976-01-13 1982-07-20 The Research Institute For Iron, Steel And Other Metals Of The Tohoku University Super hard highly pure silicon nitrides and a process and apparatus for producing the same
US4290385A (en) * 1979-06-14 1981-09-22 Tokyo Shibaura Denki Kabushiki Kaisha Vertical type vapor-phase growth apparatus
US4348981A (en) * 1979-06-14 1982-09-14 Tokyo Shibaura Denki Kabushiki Kaisha Vertical type vapor-phase growth apparatus
US4662981A (en) * 1983-02-23 1987-05-05 Koito Seisakusho Co., Ltd. Method and apparatus for forming crystalline films of compounds
US4668480A (en) * 1983-02-23 1987-05-26 Koito Seisakusho Co., Ltd. 7C apparatus for forming crystalline films of compounds
US4949671A (en) * 1985-10-24 1990-08-21 Texas Instruments Incorporated Processing apparatus and method
US5160543A (en) * 1985-12-20 1992-11-03 Canon Kabushiki Kaisha Device for forming a deposited film
US5391232A (en) * 1985-12-26 1995-02-21 Canon Kabushiki Kaisha Device for forming a deposited film
US4854266A (en) * 1987-11-02 1989-08-08 Btu Engineering Corporation Cross-flow diffusion furnace
US4989541A (en) * 1989-02-23 1991-02-05 Nobuo Mikoshiba Thin film forming apparatus
GB2229739B (en) * 1989-02-23 1993-08-25 Nobuo Mikoshiba Thin film forming apparatus
US6527865B1 (en) * 1997-09-11 2003-03-04 Applied Materials, Inc. Temperature controlled gas feedthrough
US20050098107A1 (en) * 2003-09-24 2005-05-12 Du Bois Dale R. Thermal processing system with cross-flow liner
US20050250348A1 (en) * 2004-05-06 2005-11-10 Applied Materials, Inc. In-situ oxide capping after CVD low k deposition
US7112541B2 (en) 2004-05-06 2006-09-26 Applied Materials, Inc. In-situ oxide capping after CVD low k deposition
US20100300359A1 (en) * 2004-08-02 2010-12-02 Veeco Instruments Inc. Multi-gas distribution injector for chemical vapor deposition reactors
US20060276054A1 (en) * 2005-06-03 2006-12-07 Applied Materials, Inc. In situ oxide cap layer development
US7273823B2 (en) 2005-06-03 2007-09-25 Applied Materials, Inc. Situ oxide cap layer development
US20090263578A1 (en) * 2008-04-22 2009-10-22 Picosun Oy Apparatus and methods for deposition reactors
US8741062B2 (en) * 2008-04-22 2014-06-03 Picosun Oy Apparatus and methods for deposition reactors

Also Published As

Publication number Publication date
FR1419209A (fr) 1965-11-26
GB1056919A (en) 1967-02-01
AT261675B (de) 1968-05-10
DE1282613B (de) 1968-11-14

Similar Documents

Publication Publication Date Title
US3297501A (en) Process for epitaxial growth of semiconductor single crystals
US3364084A (en) Production of epitaxial films
US3511727A (en) Vapor phase etching and polishing of semiconductors
US3473978A (en) Epitaxial growth of germanium
US3218205A (en) Use of hydrogen halide and hydrogen in separate streams as carrier gases in vapor deposition of iii-v compounds
US3312570A (en) Production of epitaxial films of semiconductor compound material
US4010045A (en) Process for production of III-V compound crystals
US3146137A (en) Smooth epitaxial compound films having a uniform thickness by vapor depositing on the (100) crystallographic plane of the substrate
US3218204A (en) Use of hydrogen halide as a carrier gas in forming ii-vi compound from a crude ii-vicompound
US7435665B2 (en) CVD doped structures
JP2003517726A (ja) 緩和シリコンゲルマニウム層の作製方法
US3669774A (en) Low temperature silicon etch
US3462323A (en) Process for the preparation of compound semiconductors
US4464222A (en) Process for increasing silicon thermal decomposition deposition rates from silicon halide-hydrogen reaction gases
US3394390A (en) Method for making compond semiconductor materials
US3496037A (en) Semiconductor growth on dielectric substrates
US4910163A (en) Method for low temperature growth of silicon epitaxial layers using chemical vapor deposition system
US3503798A (en) Silicon nitride film deposition method
US3291657A (en) Epitaxial method of producing semiconductor members using a support having varyingly doped surface areas
US3441453A (en) Method for making graded composition mixed compound semiconductor materials
US3975218A (en) Process for production of III-V compound epitaxial crystals
US3625749A (en) Method for deposition of silicon dioxide films
US3653991A (en) Method of producing epitactic growth layers of semiconductor material for electrical components
US5897705A (en) Process for the production of an epitaxially coated semiconductor wafer
US3428500A (en) Process of epitaxial deposition on one side of a substrate with simultaneous vapor etching of the opposite side