AT277161B - Verfahren zur Herstellung von Siliziumkarbidkristallen - Google Patents
Verfahren zur Herstellung von SiliziumkarbidkristallenInfo
- Publication number
- AT277161B AT277161B AT954867A AT954867A AT277161B AT 277161 B AT277161 B AT 277161B AT 954867 A AT954867 A AT 954867A AT 954867 A AT954867 A AT 954867A AT 277161 B AT277161 B AT 277161B
- Authority
- AT
- Austria
- Prior art keywords
- production
- silicon carbide
- carbide crystals
- crystals
- silicon
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
- 229910010271 silicon carbide Inorganic materials 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0054—Processes for devices with an active region comprising only group IV elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/148—Silicon carbide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
- Y10S252/951—Doping agent source material for vapor transport
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6615060A NL6615060A (de) | 1966-10-25 | 1966-10-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AT277161B true AT277161B (de) | 1969-12-10 |
Family
ID=19797992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT954867A AT277161B (de) | 1966-10-25 | 1967-10-23 | Verfahren zur Herstellung von Siliziumkarbidkristallen |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3615930A (de) |
| JP (1) | JPS5324778B1 (de) |
| AT (1) | AT277161B (de) |
| BE (1) | BE705581A (de) |
| CH (1) | CH494064A (de) |
| GB (1) | GB1182634A (de) |
| NL (1) | NL6615060A (de) |
| SE (1) | SE328853B (de) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3565703A (en) * | 1969-07-09 | 1971-02-23 | Norton Research Corp | Silicon carbide junction diode |
| US4063974A (en) * | 1975-11-14 | 1977-12-20 | Hughes Aircraft Company | Planar reactive evaporation method for the deposition of compound semiconducting films |
| US4147572A (en) * | 1976-10-18 | 1979-04-03 | Vodakov Jury A | Method for epitaxial production of semiconductor silicon carbide utilizing a close-space sublimation deposition technique |
| US4209474A (en) * | 1977-08-31 | 1980-06-24 | General Electric Company | Process for preparing semiconducting silicon carbide sintered body |
| US4756895A (en) * | 1986-08-22 | 1988-07-12 | Stemcor Corporation | Hexagonal silicon carbide platelets and preforms and methods for making and using same |
| US4981665A (en) * | 1986-08-22 | 1991-01-01 | Stemcor Corporation | Hexagonal silicon carbide platelets and preforms and methods for making and using same |
| US5002905A (en) * | 1986-08-22 | 1991-03-26 | Stemcor Corporation | Hexagonal silicon carbide platelets and preforms and methods for making and using same |
| US4866005A (en) | 1987-10-26 | 1989-09-12 | North Carolina State University | Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide |
| US5441011A (en) * | 1993-03-16 | 1995-08-15 | Nippon Steel Corporation | Sublimation growth of single crystal SiC |
| FR2747401B1 (fr) * | 1996-04-10 | 1998-05-15 | Commissariat Energie Atomique | Dispositif et procede pour la formation de carbure de silicium (sic) monocristallin sur un germe |
| US6814801B2 (en) * | 2002-06-24 | 2004-11-09 | Cree, Inc. | Method for producing semi-insulating resistivity in high purity silicon carbide crystals |
| US7601441B2 (en) * | 2002-06-24 | 2009-10-13 | Cree, Inc. | One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer |
| JP4470690B2 (ja) * | 2004-10-29 | 2010-06-02 | 住友電気工業株式会社 | 炭化珪素単結晶、炭化珪素基板および炭化珪素単結晶の製造方法 |
| CN114000197A (zh) | 2015-09-24 | 2022-02-01 | 帕里杜斯有限公司 | 气相沉积装置以及使用高纯度聚合物衍生的碳化硅的技术 |
-
1966
- 1966-10-25 NL NL6615060A patent/NL6615060A/xx unknown
-
1967
- 1967-10-21 JP JP6754167A patent/JPS5324778B1/ja active Pending
- 1967-10-23 AT AT954867A patent/AT277161B/de not_active IP Right Cessation
- 1967-10-23 SE SE14494/67A patent/SE328853B/xx unknown
- 1967-10-23 CH CH1477867A patent/CH494064A/de not_active IP Right Cessation
- 1967-10-24 BE BE705581D patent/BE705581A/xx unknown
- 1967-10-25 US US677897A patent/US3615930A/en not_active Expired - Lifetime
- 1967-10-25 GB GB47785/67A patent/GB1182634A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1619986B2 (de) | 1975-11-06 |
| CH494064A (de) | 1970-07-31 |
| JPS5324778B1 (de) | 1978-07-22 |
| DE1619986A1 (de) | 1970-03-26 |
| BE705581A (de) | 1968-04-24 |
| GB1182634A (en) | 1970-02-25 |
| US3615930A (en) | 1971-10-26 |
| SE328853B (de) | 1970-09-28 |
| NL6615060A (de) | 1968-04-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ELJ | Ceased due to non-payment of the annual fee |