CH501061A - Verfahren zur Herstellung von Kristallen aus gegebenenfalls mit Siliziumkarbid gemischtem Aluminiumnitrid - Google Patents

Verfahren zur Herstellung von Kristallen aus gegebenenfalls mit Siliziumkarbid gemischtem Aluminiumnitrid

Info

Publication number
CH501061A
CH501061A CH1477767A CH1477767A CH501061A CH 501061 A CH501061 A CH 501061A CH 1477767 A CH1477767 A CH 1477767A CH 1477767 A CH1477767 A CH 1477767A CH 501061 A CH501061 A CH 501061A
Authority
CH
Switzerland
Prior art keywords
crystals
production
silicon carbide
aluminum nitride
optionally mixed
Prior art date
Application number
CH1477767A
Other languages
English (en)
Inventor
Franciscus Knippenbe Wilhelmus
Verspui Gerrit
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH501061A publication Critical patent/CH501061A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/915—Separating from substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CH1477767A 1966-10-25 1967-10-23 Verfahren zur Herstellung von Kristallen aus gegebenenfalls mit Siliziumkarbid gemischtem Aluminiumnitrid CH501061A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6615059A NL6615059A (de) 1966-10-25 1966-10-25

Publications (1)

Publication Number Publication Date
CH501061A true CH501061A (de) 1970-12-31

Family

ID=19797991

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1477767A CH501061A (de) 1966-10-25 1967-10-23 Verfahren zur Herstellung von Kristallen aus gegebenenfalls mit Siliziumkarbid gemischtem Aluminiumnitrid

Country Status (8)

Country Link
US (1) US3634149A (de)
AT (1) AT288318B (de)
BE (1) BE705580A (de)
CH (1) CH501061A (de)
DE (1) DE1667656A1 (de)
GB (1) GB1196029A (de)
NL (1) NL6615059A (de)
SE (1) SE328852B (de)

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US4382837A (en) * 1981-06-30 1983-05-10 International Business Machines Corporation Epitaxial crystal fabrication of SiC:AlN
JPS61291494A (ja) * 1985-06-19 1986-12-22 Sharp Corp 炭化珪素単結晶基板の製造方法
JP2650744B2 (ja) * 1988-12-28 1997-09-03 シャープ株式会社 発光ダイオード
DE4109979C2 (de) * 1990-03-28 2000-03-30 Nisshin Flour Milling Co Verfahren zur Herstellung beschichteter Teilchen aus anorganischen oder metallischen Materialien
US5958132A (en) * 1991-04-18 1999-09-28 Nippon Steel Corporation SiC single crystal and method for growth thereof
JP3214868B2 (ja) * 1991-07-19 2001-10-02 ローム株式会社 ヘテロ接合バイポーラトランジスタの製造方法
US5270263A (en) * 1991-12-20 1993-12-14 Micron Technology, Inc. Process for depositing aluminum nitride (AlN) using nitrogen plasma sputtering
US5679152A (en) * 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
US6958093B2 (en) * 1994-01-27 2005-10-25 Cree, Inc. Free-standing (Al, Ga, In)N and parting method for forming same
US5759908A (en) * 1995-05-16 1998-06-02 University Of Cincinnati Method for forming SiC-SOI structures
US5814840A (en) * 1995-06-06 1998-09-29 Purdue Research Foundation Incandescent light energy conversion with reduced infrared emission
US5650361A (en) * 1995-11-21 1997-07-22 The Aerospace Corporation Low temperature photolytic deposition of aluminum nitride thin films
FR2747401B1 (fr) * 1996-04-10 1998-05-15 Commissariat Energie Atomique Dispositif et procede pour la formation de carbure de silicium (sic) monocristallin sur un germe
US5858086A (en) * 1996-10-17 1999-01-12 Hunter; Charles Eric Growth of bulk single crystals of aluminum nitride
US5954874A (en) * 1996-10-17 1999-09-21 Hunter; Charles Eric Growth of bulk single crystals of aluminum nitride from a melt
US6045612A (en) * 1998-07-07 2000-04-04 Cree, Inc. Growth of bulk single crystals of aluminum nitride
US6063185A (en) * 1998-10-09 2000-05-16 Cree, Inc. Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy
US6086672A (en) * 1998-10-09 2000-07-11 Cree, Inc. Growth of bulk single crystals of aluminum nitride: silicon carbide alloys
US6596079B1 (en) * 2000-03-13 2003-07-22 Advanced Technology Materials, Inc. III-V nitride substrate boule and method of making and using the same
US20060005763A1 (en) * 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US8545629B2 (en) * 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US7638346B2 (en) * 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
JP4470690B2 (ja) * 2004-10-29 2010-06-02 住友電気工業株式会社 炭化珪素単結晶、炭化珪素基板および炭化珪素単結晶の製造方法
WO2007062250A2 (en) 2005-11-28 2007-05-31 Crystal Is, Inc. Large aluminum nitride crystals with reduced defects and methods of making them
US7641735B2 (en) * 2005-12-02 2010-01-05 Crystal Is, Inc. Doped aluminum nitride crystals and methods of making them
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
EP2007933B1 (de) * 2006-03-30 2017-05-10 Crystal Is, Inc. Verfahren zur gesteuerten dotierung von aluminiumnitrid-massenkristallen
CN107059116B (zh) 2007-01-17 2019-12-31 晶体公司 引晶的氮化铝晶体生长中的缺陷减少
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
CN101652832B (zh) * 2007-01-26 2011-06-22 晶体公司 厚的赝晶氮化物外延层
US8080833B2 (en) * 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
US8088220B2 (en) * 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
EP2224041A4 (de) * 2007-11-22 2014-06-11 Univ Meijo Polygonales kolumnares material von aluminiumnitrideinkristall und verfahren zur herstellung von plattenartigem aluminiumnitrideinrkistall unter verwendung des polygonalen kolumnaren materials
JP5303941B2 (ja) * 2008-01-31 2013-10-02 住友電気工業株式会社 ＡｌｘＧａ１−ｘＮ単結晶の成長方法
JP5367434B2 (ja) * 2009-03-31 2013-12-11 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
US20100314551A1 (en) * 2009-06-11 2010-12-16 Bettles Timothy J In-line Fluid Treatment by UV Radiation
JP5806734B2 (ja) 2010-06-30 2015-11-10 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. 熱勾配制御による窒化アルミニウム大単結晶成長
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
CN108511567A (zh) 2013-03-15 2018-09-07 晶体公司 与赝配电子和光电器件的平面接触

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL239785A (de) * 1959-06-02
NL279070A (de) * 1959-06-18
US3129125A (en) * 1959-07-01 1964-04-14 Westinghouse Electric Corp Preparation of silicon carbide materials
US3228756A (en) * 1960-05-20 1966-01-11 Transitron Electronic Corp Method of growing single crystal silicon carbide
US3210624A (en) * 1961-04-24 1965-10-05 Monsanto Co Article having a silicon carbide substrate with an epitaxial layer of boron phosphide
US3275415A (en) * 1964-02-27 1966-09-27 Westinghouse Electric Corp Apparatus for and preparation of silicon carbide single crystals

Also Published As

Publication number Publication date
DE1667656A1 (de) 1971-06-24
GB1196029A (en) 1970-06-24
BE705580A (de) 1968-04-24
SE328852B (de) 1970-09-28
US3634149A (en) 1972-01-11
AT288318B (de) 1971-02-25
NL6615059A (de) 1968-04-26

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