CH510328A - Verfahren zur Herstellung hochohmiger Siliziumkarbid-Dioden - Google Patents
Verfahren zur Herstellung hochohmiger Siliziumkarbid-DiodenInfo
- Publication number
- CH510328A CH510328A CH1477369A CH1477369A CH510328A CH 510328 A CH510328 A CH 510328A CH 1477369 A CH1477369 A CH 1477369A CH 1477369 A CH1477369 A CH 1477369A CH 510328 A CH510328 A CH 510328A
- Authority
- CH
- Switzerland
- Prior art keywords
- production
- silicon carbide
- resistance silicon
- carbide diodes
- diodes
- Prior art date
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
- 229910010271 silicon carbide Inorganic materials 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH1477369A CH510328A (de) | 1969-10-01 | 1969-10-01 | Verfahren zur Herstellung hochohmiger Siliziumkarbid-Dioden |
| DE19691956011 DE1956011A1 (de) | 1969-10-01 | 1969-11-07 | Verfahren zur Herstellung hochohmiger Siliziumkarbid-Dioden |
| FR7035321A FR2064080A7 (en) | 1969-10-01 | 1970-09-30 | High resistance silicon-carbide diodes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH1477369A CH510328A (de) | 1969-10-01 | 1969-10-01 | Verfahren zur Herstellung hochohmiger Siliziumkarbid-Dioden |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH510328A true CH510328A (de) | 1971-07-15 |
Family
ID=4403709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1477369A CH510328A (de) | 1969-10-01 | 1969-10-01 | Verfahren zur Herstellung hochohmiger Siliziumkarbid-Dioden |
Country Status (3)
| Country | Link |
|---|---|
| CH (1) | CH510328A (de) |
| DE (1) | DE1956011A1 (de) |
| FR (1) | FR2064080A7 (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4947218A (en) * | 1987-11-03 | 1990-08-07 | North Carolina State University | P-N junction diodes in silicon carbide |
| JPH06333892A (ja) * | 1993-03-22 | 1994-12-02 | Fuji Electric Corp Res & Dev Ltd | 電子デバイス |
| DE4325804C3 (de) * | 1993-07-31 | 2001-08-09 | Daimler Chrysler Ag | Verfahren zum Herstellen von hochohmigem Siliziumkarbid |
-
1969
- 1969-10-01 CH CH1477369A patent/CH510328A/de not_active IP Right Cessation
- 1969-11-07 DE DE19691956011 patent/DE1956011A1/de active Pending
-
1970
- 1970-09-30 FR FR7035321A patent/FR2064080A7/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2064080A7 (en) | 1971-07-16 |
| DE1956011A1 (de) | 1971-04-15 |
| FR2064080B3 (de) | 1973-06-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |