CH464152A - Verfahren zur Wärmebehandlung von Halbleitereinkristallen - Google Patents

Verfahren zur Wärmebehandlung von Halbleitereinkristallen

Info

Publication number
CH464152A
CH464152A CH112766D CH112766D CH464152A CH 464152 A CH464152 A CH 464152A CH 112766 D CH112766 D CH 112766D CH 112766 D CH112766 D CH 112766D CH 464152 A CH464152 A CH 464152A
Authority
CH
Switzerland
Prior art keywords
heat treatment
single crystals
semiconductor single
semiconductor
crystals
Prior art date
Application number
CH112766D
Other languages
English (en)
Inventor
Schmidt Otto
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH464152A publication Critical patent/CH464152A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/003—Anneal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/097—Lattice strain and defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CH112766D 1965-08-05 1966-08-04 Verfahren zur Wärmebehandlung von Halbleitereinkristallen CH464152A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0098654 1965-08-05

Publications (1)

Publication Number Publication Date
CH464152A true CH464152A (de) 1968-10-31

Family

ID=7521631

Family Applications (1)

Application Number Title Priority Date Filing Date
CH112766D CH464152A (de) 1965-08-05 1966-08-04 Verfahren zur Wärmebehandlung von Halbleitereinkristallen

Country Status (3)

Country Link
US (1) US3441385A (de)
BE (1) BE684801A (de)
CH (1) CH464152A (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3939035A (en) * 1971-03-31 1976-02-17 Siemens Aktiengesellschaft Method of producing monocrystalline semiconductor material, particularly silicon, with adjustable dislocation density
DE2234512C3 (de) * 1972-07-13 1979-04-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von (Umorientierten Halbleitereinkristallstäben mit zur Stabmitte abtauendem spezifischem Widerstand
US3898051A (en) * 1973-12-28 1975-08-05 Crystal Syst Crystal growing
FR2435818A1 (fr) * 1978-09-08 1980-04-04 Ibm France Procede pour accroitre l'effet de piegeage interne des corps semi-conducteurs
JPS5556098A (en) * 1978-10-17 1980-04-24 Chiyou Lsi Gijutsu Kenkyu Kumiai Method and apparatus for producing si single crystal rod
JPS5617011A (en) * 1979-07-23 1981-02-18 Toshiba Corp Semiconductor device and manufacture thereof
WO2009094526A1 (en) * 2008-01-23 2009-07-30 Massachusetts Institute Of Technology Method to reduce dislocation density in silicon
WO2011038390A2 (en) * 2009-09-28 2011-03-31 Massachusetts Institute Of Technology Method to reduce dislocation density in silicon using stress

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL63276C (de) * 1941-04-04
US3012865A (en) * 1957-11-25 1961-12-12 Du Pont Silicon purification process
GB849550A (en) * 1958-01-30 1960-09-28 Gen Electric Co Ltd Improvements in or relating to the heat treatment of silicon
US2916593A (en) * 1958-07-25 1959-12-08 Gen Electric Induction heating apparatus and its use in silicon production

Also Published As

Publication number Publication date
US3441385A (en) 1969-04-29
BE684801A (de) 1967-01-03

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