AT270749B - Verfahren zum Abscheiden von hochreinem kristallinem Material - Google Patents
Verfahren zum Abscheiden von hochreinem kristallinem MaterialInfo
- Publication number
- AT270749B AT270749B AT507967A AT507967A AT270749B AT 270749 B AT270749 B AT 270749B AT 507967 A AT507967 A AT 507967A AT 507967 A AT507967 A AT 507967A AT 270749 B AT270749 B AT 270749B
- Authority
- AT
- Austria
- Prior art keywords
- deposition
- crystalline material
- highly pure
- pure crystalline
- highly
- Prior art date
Links
- 239000002178 crystalline material Substances 0.000 title 1
- 230000008021 deposition Effects 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B41/00—Obtaining germanium
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0104115 | 1966-06-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AT270749B true AT270749B (de) | 1969-05-12 |
Family
ID=7525634
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT507967A AT270749B (de) | 1966-06-02 | 1967-05-31 | Verfahren zum Abscheiden von hochreinem kristallinem Material |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3489621A (de) |
| AT (1) | AT270749B (de) |
| CH (1) | CH487262A (de) |
| DE (1) | DE1519892A1 (de) |
| GB (1) | GB1128556A (de) |
| NL (1) | NL6707560A (de) |
| SE (1) | SE326431B (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3554162A (en) * | 1969-01-22 | 1971-01-12 | Motorola Inc | Diffusion tube |
| US3765960A (en) * | 1970-11-02 | 1973-10-16 | Ibm | Method for minimizing autodoping in epitaxial deposition |
| SE393967B (sv) * | 1974-11-29 | 1977-05-31 | Sateko Oy | Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket |
| US4957780A (en) * | 1987-01-20 | 1990-09-18 | Gte Laboratories Incorporated | Internal reactor method for chemical vapor deposition |
| GB2213836B (en) * | 1987-12-18 | 1992-08-26 | Gen Electric Co Plc | Vacuum deposition process |
| WO1998000215A1 (fr) * | 1996-07-02 | 1998-01-08 | Jury Viktorovich Klevkov | Procede permettant d'eliminer les impuretes de substances simples ou complexes |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3145125A (en) * | 1961-07-10 | 1964-08-18 | Ibm | Method of synthesizing iii-v compound semiconductor epitaxial layers having a specified conductivity type without impurity additions |
-
1966
- 1966-06-02 DE DE19661519892 patent/DE1519892A1/de active Pending
-
1967
- 1967-05-24 US US640879A patent/US3489621A/en not_active Expired - Lifetime
- 1967-05-30 CH CH761767A patent/CH487262A/de not_active IP Right Cessation
- 1967-05-31 NL NL6707560A patent/NL6707560A/xx unknown
- 1967-05-31 AT AT507967A patent/AT270749B/de active
- 1967-05-31 SE SE07655/67*A patent/SE326431B/xx unknown
- 1967-06-01 GB GB25331/67A patent/GB1128556A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL6707560A (de) | 1967-12-04 |
| DE1519892A1 (de) | 1969-02-20 |
| SE326431B (de) | 1970-07-27 |
| GB1128556A (en) | 1968-09-25 |
| US3489621A (en) | 1970-01-13 |
| CH487262A (de) | 1970-03-15 |
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