GB1031136A - A method of producing monocrystalline silicon carbide - Google Patents

A method of producing monocrystalline silicon carbide

Info

Publication number
GB1031136A
GB1031136A GB48622/64A GB4852264A GB1031136A GB 1031136 A GB1031136 A GB 1031136A GB 48622/64 A GB48622/64 A GB 48622/64A GB 4852264 A GB4852264 A GB 4852264A GB 1031136 A GB1031136 A GB 1031136A
Authority
GB
United Kingdom
Prior art keywords
silicon carbide
melt
chromium
crucible
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB48622/64A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1031136A publication Critical patent/GB1031136A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C30B15/16—Heating of the melt or the crystallised materials by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y10S117/904—Laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/905—Electron beam
GB48622/64A 1963-12-17 1964-12-04 A method of producing monocrystalline silicon carbide Expired GB1031136A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEJ24946A DE1208739B (de) 1963-12-17 1963-12-17 Verfahren zum Ziehen von einkristallinem Siliziumkarbid

Publications (1)

Publication Number Publication Date
GB1031136A true GB1031136A (en) 1966-05-25

Family

ID=7202008

Family Applications (1)

Application Number Title Priority Date Filing Date
GB48622/64A Expired GB1031136A (en) 1963-12-17 1964-12-04 A method of producing monocrystalline silicon carbide

Country Status (4)

Country Link
US (1) US3278274A (de)
AT (1) AT249116B (de)
DE (1) DE1208739B (de)
GB (1) GB1031136A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106482514A (zh) * 2016-12-09 2017-03-08 永平县泰达废渣开发利用有限公司 一种基于电子束枪的感应炉熔硅起炉装置及工艺

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1264399B (de) * 1965-06-10 1968-03-28 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen
US3607139A (en) * 1968-05-02 1971-09-21 Air Reduction Single crystal growth and diameter control by magnetic melt agitation
US3897590A (en) * 1968-05-18 1975-07-29 Battelle Development Corp Method and apparatus for making monocrystals
US3494804A (en) * 1968-07-15 1970-02-10 Air Reduction Method for growing crystals
US3943324A (en) * 1970-12-14 1976-03-09 Arthur D. Little, Inc. Apparatus for forming refractory tubing
US4012213A (en) * 1973-06-14 1977-03-15 Arthur D. Little, Inc. Apparatus for forming refractory fibers
US4349407A (en) * 1979-05-09 1982-09-14 The United States Of America As Represented By The United States Department Of Energy Method of forming single crystals of beta silicon carbide using liquid lithium as a solvent
US4971650A (en) * 1989-09-22 1990-11-20 Westinghouse Electric Corp. Method of inhibiting dislocation generation in silicon dendritic webs
JP4450075B2 (ja) 2008-01-15 2010-04-14 トヨタ自動車株式会社 炭化珪素単結晶の成長方法
JP6129065B2 (ja) * 2013-12-06 2017-05-17 信越化学工業株式会社 炭化珪素の結晶成長方法
EP2881499B1 (de) 2013-12-06 2020-03-11 Shin-Etsu Chemical Co., Ltd. Verfahren zur Züchtung von Siliciumcarbidkristall
JP6129064B2 (ja) * 2013-12-06 2017-05-17 信越化学工業株式会社 炭化珪素の結晶成長方法
JP6533716B2 (ja) 2015-08-06 2019-06-19 信越化学工業株式会社 ＳｉＣ単結晶の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE542056A (de) * 1954-10-15
US2968723A (en) * 1957-04-11 1961-01-17 Zeiss Carl Means for controlling crystal structure of materials
US3053635A (en) * 1960-09-26 1962-09-11 Clevite Corp Method of growing silicon carbide crystals

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106482514A (zh) * 2016-12-09 2017-03-08 永平县泰达废渣开发利用有限公司 一种基于电子束枪的感应炉熔硅起炉装置及工艺

Also Published As

Publication number Publication date
US3278274A (en) 1966-10-11
DE1208739B (de) 1966-01-13
AT249116B (de) 1966-09-12

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