CH487505A - Verfahren zum Aufbereiten von Halbleiterkristallen für einen Diffusionsprozess - Google Patents

Verfahren zum Aufbereiten von Halbleiterkristallen für einen Diffusionsprozess

Info

Publication number
CH487505A
CH487505A CH179367A CH179367A CH487505A CH 487505 A CH487505 A CH 487505A CH 179367 A CH179367 A CH 179367A CH 179367 A CH179367 A CH 179367A CH 487505 A CH487505 A CH 487505A
Authority
CH
Switzerland
Prior art keywords
semiconductor crystals
preparing semiconductor
diffusion
diffusion process
preparing
Prior art date
Application number
CH179367A
Other languages
English (en)
Inventor
Emeis Reimer Dr Dipl-Phys
Weber Wolfgang
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH487505A publication Critical patent/CH487505A/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/017Clean surfaces
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/051Etching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/06Gettering
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/906Cleaning of wafer as interim step
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/974Substrate surface preparation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/29Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991Coated
    • Y10T428/2993Silicic or refractory material containing [e.g., tungsten oxide, glass, cement, etc.]
CH179367A 1966-03-04 1967-02-07 Verfahren zum Aufbereiten von Halbleiterkristallen für einen Diffusionsprozess CH487505A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0102364 1966-03-04

Publications (1)

Publication Number Publication Date
CH487505A true CH487505A (de) 1970-03-15

Family

ID=7524385

Family Applications (1)

Application Number Title Priority Date Filing Date
CH179367A CH487505A (de) 1966-03-04 1967-02-07 Verfahren zum Aufbereiten von Halbleiterkristallen für einen Diffusionsprozess

Country Status (7)

Country Link
US (1) US3480474A (de)
BE (1) BE694813A (de)
CH (1) CH487505A (de)
DE (1) DE1544281C3 (de)
GB (1) GB1165585A (de)
NL (1) NL6701905A (de)
SE (1) SE304750B (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4859280A (en) * 1986-12-01 1989-08-22 Harris Corporation Method of etching silicon by enhancing silicon etching capability of alkali hydroxide through the addition of positive valence impurity ions
US4843037A (en) * 1987-08-21 1989-06-27 Bell Communications Research, Inc. Passivation of indium gallium arsenide surfaces
EP0308814B1 (de) * 1987-09-21 1993-01-27 National Semiconductor Corporation Veränderung der grenzschichtfelder zwischen Isolatoren und Halbleitern
US4789596A (en) * 1987-11-27 1988-12-06 Ethyl Corporation Dopant coated bead-like silicon particles
JP3534213B2 (ja) * 1995-09-30 2004-06-07 コマツ電子金属株式会社 半導体ウェハの製造方法
KR100709205B1 (ko) * 2001-04-02 2007-04-18 삼성에스디아이 주식회사 리튬 이차 전지용 양극 활물질 조성물
EP3229262B1 (de) 2016-04-05 2018-08-15 Siltronic AG Verfahren zur dampfphasenätzung einer halbleiterscheibe zur spurenmetallanalyse

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL192840A (de) * 1954-12-01
NL132314C (de) * 1960-07-06

Also Published As

Publication number Publication date
SE304750B (de) 1968-10-07
DE1544281B2 (de) 1974-08-01
NL6701905A (de) 1967-09-05
DE1544281A1 (de) 1971-01-21
BE694813A (de) 1967-08-28
US3480474A (en) 1969-11-25
DE1544281C3 (de) 1975-04-03
GB1165585A (en) 1969-10-01

Similar Documents

Publication Publication Date Title
CH439501A (de) Verfahren zum Kontaktieren von Halbleiteranordnungen
AT277179B (de) Verfahren zum Verflüssigen von Gas
AT291180B (de) Verfahren zum Färben N-haltiger Materialien
CH480168A (de) Verfahren zum Verformen von Faserplatten
CH498493A (de) Verfahren zum Herstellen monolithischer Halbleiteranordnungen
AT249116B (de) Verfahren zum Ziehen von einkristallinem Halbleitermaterial
CH505466A (de) Verfahren zum Polieren von Halbleiteroberflächen
CH487505A (de) Verfahren zum Aufbereiten von Halbleiterkristallen für einen Diffusionsprozess
AT258364B (de) Verfahren zum Herstellen von Halbleiteranordnungen
CH454098A (de) Verfahren zum Eindiffundieren von Fremdstoffen in einen einkristallinen Halbleiterkörper
AT258363B (de) Verfahren zum Serienfertigen von Halbleiterbauelementen
CH468855A (de) Verfahren zum Tiefziehen
CH463687A (de) Verfahren zum Verstrecken von zusammengesetzten Filamenten
CH433191A (de) Verfahren zum Herstellen von einkristallinem Halbleitermaterial
CH508984A (de) Kristallträger für einen Halbleiterkristall
CH444828A (de) Verfahren zum Herstellen von Halbleiterbauelementen
CH483515A (de) Verfahren zum Knitterfestmachen von Textilgut
CH490521A (de) Verfahren zum Färben von Polyamiden
CH468721A (de) Verfahren zum gleichzeitigen Herstellen einer Vielzahl von Halbleiterbauelementen
CH446537A (de) Verfahren zum Herstellen von Halbleiterbauelementen
CH407337A (de) Verfahren zum Herstellen von Halbleiterscheiben
CH470201A (de) Verfahren zum Herstellen von Kristallen
AT259016B (de) Verfahren zum Herstellen von Halbleiteranordnungen
CH489911A (de) Verfahren zum Kontaktieren von Halbleiteranordnungen
CH457371A (de) Verfahren zum Herstellen von hochreinem Silizium

Legal Events

Date Code Title Description
PL Patent ceased