CH454098A - Verfahren zum Eindiffundieren von Fremdstoffen in einen einkristallinen Halbleiterkörper - Google Patents
Verfahren zum Eindiffundieren von Fremdstoffen in einen einkristallinen HalbleiterkörperInfo
- Publication number
- CH454098A CH454098A CH671665A CH671665A CH454098A CH 454098 A CH454098 A CH 454098A CH 671665 A CH671665 A CH 671665A CH 671665 A CH671665 A CH 671665A CH 454098 A CH454098 A CH 454098A
- Authority
- CH
- Switzerland
- Prior art keywords
- diffusion
- foreign matter
- semiconductor body
- crystal semiconductor
- crystal
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K8/00—Compositions for drilling of boreholes or wells; Compositions for treating boreholes or wells, e.g. for completion or for remedial operations
- C09K8/02—Well-drilling compositions
- C09K8/04—Aqueous well-drilling compositions
- C09K8/26—Oil-in-water emulsions
- C09K8/28—Oil-in-water emulsions containing organic additives
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/10—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/18—Controlling or regulating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
- H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
- Y10S252/951—Doping agent source material for vapor transport
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES91637A DE1283204B (de) | 1964-06-20 | 1964-06-20 | Verfahren zum Eindiffundieren von zwei Fremdstoffen in einen einkristallinen Halbleiterkoerper |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH454098A true CH454098A (de) | 1968-04-15 |
Family
ID=7516637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH671665A CH454098A (de) | 1964-06-20 | 1965-05-12 | Verfahren zum Eindiffundieren von Fremdstoffen in einen einkristallinen Halbleiterkörper |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3377216A (de) |
| BE (1) | BE665625A (de) |
| CH (1) | CH454098A (de) |
| DE (1) | DE1283204B (de) |
| GB (1) | GB1049438A (de) |
| NL (1) | NL6502378A (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3943016A (en) * | 1970-12-07 | 1976-03-09 | General Electric Company | Gallium-phosphorus simultaneous diffusion process |
| FR2178751B1 (de) * | 1972-04-05 | 1974-10-18 | Radiotechnique Compelec | |
| US4415385A (en) * | 1980-08-15 | 1983-11-15 | Hitachi, Ltd. | Diffusion of impurities into semiconductor using semi-closed inner diffusion vessel |
| EP0263270B1 (de) * | 1986-09-30 | 1992-11-11 | Siemens Aktiengesellschaft | Verfahren zum Erzeugen eines p-dotierten Halbleitergebiets in einem n-leitenden Halbleiterkörper |
| JPH0793277B2 (ja) * | 1989-02-28 | 1995-10-09 | インダストリアル・テクノロジー・リサーチ・インステイテユート | ＩｎＰ基板中へのＣｄ拡散方法 |
| CN103887153B (zh) * | 2012-12-19 | 2017-11-21 | 湖北台基半导体股份有限公司 | 一种Al‑Ga复合扩散掺杂方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3003900A (en) * | 1957-11-12 | 1961-10-10 | Pacific Semiconductors Inc | Method for diffusing active impurities into semiconductor materials |
| US3154450A (en) * | 1960-01-27 | 1964-10-27 | Bendix Corp | Method of making mesas for diodes by etching |
| US3145125A (en) * | 1961-07-10 | 1964-08-18 | Ibm | Method of synthesizing iii-v compound semiconductor epitaxial layers having a specified conductivity type without impurity additions |
| US3178798A (en) * | 1962-05-09 | 1965-04-20 | Ibm | Vapor deposition process wherein the vapor contains both donor and acceptor impurities |
-
1964
- 1964-06-20 DE DES91637A patent/DE1283204B/de active Pending
-
1965
- 1965-02-25 NL NL6502378A patent/NL6502378A/xx unknown
- 1965-05-12 CH CH671665A patent/CH454098A/de unknown
- 1965-06-04 GB GB24056/65A patent/GB1049438A/en not_active Expired
- 1965-06-18 BE BE665625D patent/BE665625A/xx unknown
- 1965-06-21 US US465504A patent/US3377216A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US3377216A (en) | 1968-04-09 |
| GB1049438A (en) | 1966-11-30 |
| NL6502378A (de) | 1965-12-21 |
| DE1283204B (de) | 1968-11-21 |
| BE665625A (de) | 1965-12-20 |
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