CH409886A - Verfahren zum Herstellen von Scheiben aus einkristallinem Silizium oder Germanium - Google Patents
Verfahren zum Herstellen von Scheiben aus einkristallinem Silizium oder GermaniumInfo
- Publication number
- CH409886A CH409886A CH1454261A CH1454261A CH409886A CH 409886 A CH409886 A CH 409886A CH 1454261 A CH1454261 A CH 1454261A CH 1454261 A CH1454261 A CH 1454261A CH 409886 A CH409886 A CH 409886A
- Authority
- CH
- Switzerland
- Prior art keywords
- germanium
- crystal silicon
- manufacturing disks
- disks
- manufacturing
- Prior art date
Links
- 229910052732 germanium Inorganic materials 0.000 title 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES60264A DE1090868B (de) | 1958-10-15 | 1958-10-15 | Verfahren zum Ziehen von einkristallinen Halbleiterstaeben aus Schmelzen |
| DES73154A DE1207636B (de) | 1958-10-15 | 1961-03-27 | Verfahren zum Herstellen von Scheiben aus einkristallinem Silizium und/oder Germanium fuer Halbleiterbauelemente |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH409886A true CH409886A (de) | 1966-03-31 |
Family
ID=43127708
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH7918459A CH386702A (de) | 1958-10-15 | 1959-10-08 | Verfahren zum Ziehen von kristallinen Halbleiterstäben aus der Schmelze |
| CH1454261A CH409886A (de) | 1958-10-15 | 1961-12-14 | Verfahren zum Herstellen von Scheiben aus einkristallinem Silizium oder Germanium |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH7918459A CH386702A (de) | 1958-10-15 | 1959-10-08 | Verfahren zum Ziehen von kristallinen Halbleiterstäben aus der Schmelze |
Country Status (5)
| Country | Link |
|---|---|
| CH (2) | CH386702A (de) |
| DE (2) | DE1090868B (de) |
| FR (2) | FR1235174A (de) |
| GB (2) | GB898096A (de) |
| NL (1) | NL274787A (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0729815A1 (de) * | 1995-02-28 | 1996-09-04 | Shin-Etsu Handotai Co., Ltd. | Verfahren zum Herstellen von Scheiben |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4121965A (en) * | 1976-07-16 | 1978-10-24 | The United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration | Method of controlling defect orientation in silicon crystal ribbon growth |
| US4118197A (en) * | 1977-01-24 | 1978-10-03 | Mobil Tyco Solar Energy Corp. | Cartridge and furnace for crystal growth |
| US4239734A (en) * | 1978-07-13 | 1980-12-16 | International Business Machines Corporation | Method and apparatus for forming silicon crystalline bodies |
| US4751059A (en) * | 1986-12-05 | 1988-06-14 | Westinghouse Electric Corp. | Apparatus for growing dendritic web crystals of constant width |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH292927A (de) * | 1950-01-13 | 1953-08-31 | Western Electric Co | Verfahren und Einrichtung zur Erzeugung von Halbleiterkristallen. |
-
1958
- 1958-10-15 DE DES60264A patent/DE1090868B/de active Pending
-
1959
- 1959-09-15 FR FR805164A patent/FR1235174A/fr not_active Expired
- 1959-10-08 CH CH7918459A patent/CH386702A/de unknown
- 1959-10-14 GB GB34803/59A patent/GB898096A/en not_active Expired
-
1961
- 1961-03-27 DE DES73154A patent/DE1207636B/de active Pending
- 1961-12-14 CH CH1454261A patent/CH409886A/de unknown
-
1962
- 1962-02-14 NL NL274787D patent/NL274787A/xx unknown
- 1962-03-23 GB GB11321/62A patent/GB938917A/en not_active Expired
- 1962-03-26 FR FR892273A patent/FR81564E/fr not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0729815A1 (de) * | 1995-02-28 | 1996-09-04 | Shin-Etsu Handotai Co., Ltd. | Verfahren zum Herstellen von Scheiben |
| US5918587A (en) * | 1995-02-28 | 1999-07-06 | Shin-Etsu Handotai Co., Ltd. | Method of producing slices |
Also Published As
| Publication number | Publication date |
|---|---|
| FR81564E (fr) | 1963-10-11 |
| CH386702A (de) | 1965-01-15 |
| GB938917A (en) | 1963-10-09 |
| DE1090868B (de) | 1960-10-13 |
| FR1235174A (fr) | 1960-10-26 |
| DE1207636B (de) | 1965-12-23 |
| NL274787A (de) | 1964-09-25 |
| GB898096A (en) | 1962-06-06 |
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