CH369830A - Verfahren zum Herstellen von stabförmigen Halbleiterkörpern - Google Patents

Verfahren zum Herstellen von stabförmigen Halbleiterkörpern

Info

Publication number
CH369830A
CH369830A CH7324359A CH7324359A CH369830A CH 369830 A CH369830 A CH 369830A CH 7324359 A CH7324359 A CH 7324359A CH 7324359 A CH7324359 A CH 7324359A CH 369830 A CH369830 A CH 369830A
Authority
CH
Switzerland
Prior art keywords
rod
production
shaped semiconductor
semiconductor bodies
bodies
Prior art date
Application number
CH7324359A
Other languages
English (en)
Inventor
Guenther Dipl-Phys Dr Ziegler
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH369830A publication Critical patent/CH369830A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CH7324359A 1958-05-21 1959-05-15 Verfahren zum Herstellen von stabförmigen Halbleiterkörpern CH369830A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES58305A DE1164680B (de) 1958-05-21 1958-05-21 Verfahren zum Herstellen von stabfoermigen Halbleiterkoerpern hoher Reinheit

Publications (1)

Publication Number Publication Date
CH369830A true CH369830A (de) 1963-06-15

Family

ID=7492451

Family Applications (1)

Application Number Title Priority Date Filing Date
CH7324359A CH369830A (de) 1958-05-21 1959-05-15 Verfahren zum Herstellen von stabförmigen Halbleiterkörpern

Country Status (5)

Country Link
US (1) US3167512A (de)
CH (1) CH369830A (de)
DE (1) DE1164680B (de)
FR (1) FR1226810A (de)
GB (1) GB902016A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1544292C3 (de) * 1966-06-13 1976-01-08 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen stabförmiger Siliciumeinkristalle mit über die gesamte Stablänge homogener Antimondotierung
GB1542868A (en) * 1975-11-14 1979-03-28 Siemens Ag Production of phosphorus-doped monocrystalline silicon rods
US4094730A (en) * 1977-03-11 1978-06-13 The United States Of America As Represented By The Secretary Of The Air Force Method for fabrication of high minority carrier lifetime, low to moderate resistivity, single crystal silicon
GB2082933B (en) * 1980-09-03 1984-10-03 Westinghouse Electric Corp High voltage semiconductor materials and structures and method for their

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2730470A (en) * 1950-06-15 1956-01-10 Bell Telephone Labor Inc Method of making semi-conductor crystals
BE510303A (de) * 1951-11-16
US2792317A (en) * 1954-01-28 1957-05-14 Westinghouse Electric Corp Method of producing multiple p-n junctions
NL111118C (de) * 1954-04-01
US2813048A (en) * 1954-06-24 1957-11-12 Bell Telephone Labor Inc Temperature gradient zone-melting
DE1018558B (de) * 1954-07-15 1957-10-31 Siemens Ag Verfahren zur Herstellung von Richtleitern, Transistoren u. dgl. aus einem Halbleiter
NL109285C (de) * 1955-09-06

Also Published As

Publication number Publication date
DE1164680B (de) 1964-03-05
US3167512A (en) 1965-01-26
GB902016A (en) 1962-07-25
FR1226810A (fr) 1960-08-16

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