CH442248A - Verfahren zum Herstellen von dotierten Halbleitereinkristallen - Google Patents

Verfahren zum Herstellen von dotierten Halbleitereinkristallen

Info

Publication number
CH442248A
CH442248A CH1159662A CH1159662A CH442248A CH 442248 A CH442248 A CH 442248A CH 1159662 A CH1159662 A CH 1159662A CH 1159662 A CH1159662 A CH 1159662A CH 442248 A CH442248 A CH 442248A
Authority
CH
Switzerland
Prior art keywords
production
doped semiconductor
single crystals
semiconductor single
crystals
Prior art date
Application number
CH1159662A
Other languages
English (en)
Inventor
Sirtl Erhard Dr Dipl-Chem
Dersin Hansjuergen D Dipl-Chem
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH442248A publication Critical patent/CH442248A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/02546Arsenides
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005Growth of whiskers or needles
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/46Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901Levitation, reduced gravity, microgravity, space
    • Y10S117/902Specified orientation, shape, crystallography, or size of seed or substrate
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903Dendrite or web or cage technique

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CH1159662A 1961-11-24 1962-10-02 Verfahren zum Herstellen von dotierten Halbleitereinkristallen CH442248A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES76815A DE1257119B (de) 1961-11-24 1961-11-24 Verfahren zum Herstellen epitaktischer Schichten auf {111}-Flaechen dendritischer Halbleiterkristalle

Publications (1)

Publication Number Publication Date
CH442248A true CH442248A (de) 1967-08-31

Family

ID=7506382

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1159662A CH442248A (de) 1961-11-24 1962-10-02 Verfahren zum Herstellen von dotierten Halbleitereinkristallen

Country Status (5)

Country Link
US (1) US3344002A (de)
CH (1) CH442248A (de)
DE (1) DE1257119B (de)
GB (1) GB1027159A (de)
NL (1) NL285435A (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3473974A (en) * 1967-02-14 1969-10-21 Westinghouse Electric Corp Utilization of trace impurities in the vapor growth of crystals
US3900363A (en) * 1972-11-15 1975-08-19 Nippon Columbia Method of making crystal

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE509317A (de) * 1951-03-07 1900-01-01
NL241834A (de) * 1958-08-28 1900-01-01
US3025192A (en) * 1959-01-02 1962-03-13 Norton Co Silicon carbide crystals and processes and furnaces for making them
US3206406A (en) * 1960-05-09 1965-09-14 Merck & Co Inc Critical cooling rate in vapor deposition process to form bladelike semiconductor compound crystals
DE1254607B (de) * 1960-12-08 1967-11-23 Siemens Ag Verfahren zum Herstellen von einkristallinen Halbleiterkoerpoern aus der Gasphase
US3152022A (en) * 1962-05-25 1964-10-06 Bell Telephone Labor Inc Epitaxial deposition on the surface of a freshly grown dendrite

Also Published As

Publication number Publication date
GB1027159A (en) 1966-04-27
NL285435A (de) 1900-01-01
DE1257119B (de) 1967-12-28
US3344002A (en) 1967-09-26

Similar Documents

Publication Publication Date Title
CH425738A (de) Verfahren zur Gewinnung von kristallinem Halbleitermaterial
CH423682A (de) Verfahren zum Herstellen von Wärmeaustauschelementen
CH444831A (de) Verfahren zum Herstellen von nicht-porösem Siliciumnitrid
CH426745A (de) Verfahren zum Herstellen von dünnen, einkristallinen halbleitenden Schichten
CH401273A (de) Verfahren zum Herstellen von Halbleiterelementen
CH444646A (de) Verfahren zum Herstellen von geklärten Säften
CH391106A (de) Verfahren zum Herstellen von Halbleiteranordnungen
CH414865A (de) Verfahren zum Herstellen von gleichzeitig mehreren Halbleiterbauelementen
CH441239A (de) Verfahren zum Herstellen von stabförmigen Halbleiterkristallen mit sehr hoher Reinheit
CH426742A (de) Verfahren zum Herstellen von einkristallinem Silizium
CH449590A (de) Verfahren zum Herstellen von III-V-Verbindungen in kristalliner Form
CH401633A (de) Verfahren zum Ätzen von im wesentlichen einkristallinen Halbleiterkörpern
CH433191A (de) Verfahren zum Herstellen von einkristallinem Halbleitermaterial
CH451680A (de) Verfahren zum Herstellen von Sauermilchprodukten
CH440227A (de) Verfahren zum Herstellen von Halbleiterkristallen, mit einstellbarer Fremdstoffkonzentration
CH395347A (de) Verfahren zum Herstellen extrem planer Halbleiterflächen
AT254947B (de) Verfahren zum Serienfertigen von Halbleiterbauelementen
CH367898A (de) Verfahren zum Herstellen von Halbleitervorrichtungen
AT258557B (de) Verfahren zum Herstellen von Spanplatten
CH413110A (de) Verfahren zum Herstellen von gesinterten Halbleiterkörpern
CH442248A (de) Verfahren zum Herstellen von dotierten Halbleitereinkristallen
CH401634A (de) Verfahren zum formgebenden Bearbeiten von Halbleiterkristallen
AT244078B (de) Verfahren zum Herstellen von Magnetogrammträgern
CH413112A (de) Verfahren zum Herstellen von Halbleitervorrichtungen
CH410196A (de) Verfahren zum Herstellen von Halbleiteranordnungen