CH426742A - Verfahren zum Herstellen von einkristallinem Silizium - Google Patents

Verfahren zum Herstellen von einkristallinem Silizium

Info

Publication number
CH426742A
CH426742A CH30561A CH30561A CH426742A CH 426742 A CH426742 A CH 426742A CH 30561 A CH30561 A CH 30561A CH 30561 A CH30561 A CH 30561A CH 426742 A CH426742 A CH 426742A
Authority
CH
Switzerland
Prior art keywords
production
single crystal
crystal silicon
silicon
crystal
Prior art date
Application number
CH30561A
Other languages
English (en)
Inventor
Sirtl Erhard Dr Dipl-Chem
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DES66651A external-priority patent/DE1124028B/de
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH426742A publication Critical patent/CH426742A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CH30561A 1960-01-15 1961-01-10 Verfahren zum Herstellen von einkristallinem Silizium CH426742A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES66651A DE1124028B (de) 1960-01-15 1960-01-15 Verfahren zum Herstellen von einkristallinem Silicium

Publications (1)

Publication Number Publication Date
CH426742A true CH426742A (de) 1966-12-31

Family

ID=7498973

Family Applications (1)

Application Number Title Priority Date Filing Date
CH30561A CH426742A (de) 1960-01-15 1961-01-10 Verfahren zum Herstellen von einkristallinem Silizium

Country Status (4)

Country Link
US (1) US3239372A (de)
CH (1) CH426742A (de)
GB (2) GB926807A (de)
NL (3) NL131048C (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3330251A (en) * 1955-11-02 1967-07-11 Siemens Ag Apparatus for producing highest-purity silicon for electric semiconductor devices
DE1444526B2 (de) * 1962-08-24 1971-02-04 Siemens AG, 1000 Berlin u 8000 München Verfahren zum Abscheiden eines halb leitenden Elements
US3862020A (en) * 1970-12-07 1975-01-21 Dow Corning Production method for polycrystalline semiconductor bodies
US4549926A (en) * 1982-01-12 1985-10-29 Rca Corporation Method for growing monocrystalline silicon on a mask layer
IN157312B (de) * 1982-01-12 1986-03-01 Rca Corp
US4482422A (en) * 1982-02-26 1984-11-13 Rca Corporation Method for growing a low defect monocrystalline layer on a mask
US4578142A (en) * 1984-05-10 1986-03-25 Rca Corporation Method for growing monocrystalline silicon through mask layer
US4592792A (en) * 1985-01-23 1986-06-03 Rca Corporation Method for forming uniformly thick selective epitaxial silicon
US4698316A (en) * 1985-01-23 1987-10-06 Rca Corporation Method of depositing uniformly thick selective epitaxial silicon
JP2651146B2 (ja) * 1987-03-02 1997-09-10 キヤノン株式会社 結晶の製造方法
ES2331283B1 (es) * 2008-06-25 2010-10-05 Centro De Tecnologia Del Silicio Solar, S.L. (Centsil) Reactor de deposito de silicio de gran pureza para aplicaciones fotovoltaicas.

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1025845B (de) * 1955-07-29 1958-03-13 Wacker Chemie Gmbh Verfahren zur Herstellung von reinstem Silicium
DE1054436B (de) * 1956-02-11 1959-04-09 Pechiney Prod Chimiques Sa Verfahren zur Herstellung von kompaktem Silicium hohen Reinheitsgrades

Also Published As

Publication number Publication date
NL131048C (de)
GB1016578A (en) 1966-01-12
NL260072A (de)
US3239372A (en) 1966-03-08
NL271203A (de)
GB926807A (en) 1963-05-22

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