GB2082933B - High voltage semiconductor materials and structures and method for their - Google Patents

High voltage semiconductor materials and structures and method for their

Info

Publication number
GB2082933B
GB2082933B GB8124519A GB8124519A GB2082933B GB 2082933 B GB2082933 B GB 2082933B GB 8124519 A GB8124519 A GB 8124519A GB 8124519 A GB8124519 A GB 8124519A GB 2082933 B GB2082933 B GB 2082933B
Authority
GB
United Kingdom
Prior art keywords
structures
high voltage
semiconductor materials
voltage semiconductor
materials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8124519A
Other versions
GB2082933A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB2082933A publication Critical patent/GB2082933A/en
Application granted granted Critical
Publication of GB2082933B publication Critical patent/GB2082933B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB8124519A 1980-09-03 1981-08-11 High voltage semiconductor materials and structures and method for their Expired GB2082933B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US18368980A 1980-09-03 1980-09-03

Publications (2)

Publication Number Publication Date
GB2082933A GB2082933A (en) 1982-03-17
GB2082933B true GB2082933B (en) 1984-10-03

Family

ID=22673901

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8124519A Expired GB2082933B (en) 1980-09-03 1981-08-11 High voltage semiconductor materials and structures and method for their

Country Status (7)

Country Link
JP (1) JPS5777099A (en)
BE (1) BE890193A (en)
BR (1) BR8105548A (en)
CA (1) CA1165469A (en)
DE (1) DE3134558A1 (en)
FR (1) FR2489374A1 (en)
GB (1) GB2082933B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6051688A (en) * 1983-08-29 1985-03-23 Nippon Hoso Kyokai <Nhk> Segregating method of impurity

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1201878A (en) * 1957-08-29 1960-01-06 Philips Nv Manufacturing process of a semiconductor body
GB852749A (en) * 1957-10-25 1960-11-02 Ass Elect Ind Improvements relating to the formation of p-n junctions in semi-conductor material
DE1164680B (en) * 1958-05-21 1964-03-05 Siemens Ag Process for the production of rod-shaped semiconductor bodies of high purity
FR1255849A (en) * 1960-05-02 1961-03-10 Wacker Chemie Gmbh Process for purifying and recrystallizing solid substances by melting zone without crucible
GB1542868A (en) * 1975-11-14 1979-03-28 Siemens Ag Production of phosphorus-doped monocrystalline silicon rods

Also Published As

Publication number Publication date
DE3134558A1 (en) 1982-06-16
FR2489374A1 (en) 1982-03-05
BR8105548A (en) 1982-05-18
CA1165469A (en) 1984-04-10
GB2082933A (en) 1982-03-17
BE890193A (en) 1982-03-02
JPS5777099A (en) 1982-05-14

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee