FR1226810A - Procédé de fabrication de semi-conducteurs et semi-conducteurs conformes à ceux obtenus - Google Patents

Procédé de fabrication de semi-conducteurs et semi-conducteurs conformes à ceux obtenus

Info

Publication number
FR1226810A
FR1226810A FR795189A FR795189A FR1226810A FR 1226810 A FR1226810 A FR 1226810A FR 795189 A FR795189 A FR 795189A FR 795189 A FR795189 A FR 795189A FR 1226810 A FR1226810 A FR 1226810A
Authority
FR
France
Prior art keywords
semiconductors
conforming
manufacturing process
those obtained
those
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR795189A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Application granted granted Critical
Publication of FR1226810A publication Critical patent/FR1226810A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
FR795189A 1958-05-21 1959-05-21 Procédé de fabrication de semi-conducteurs et semi-conducteurs conformes à ceux obtenus Expired FR1226810A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES58305A DE1164680B (de) 1958-05-21 1958-05-21 Verfahren zum Herstellen von stabfoermigen Halbleiterkoerpern hoher Reinheit

Publications (1)

Publication Number Publication Date
FR1226810A true FR1226810A (fr) 1960-08-16

Family

ID=7492451

Family Applications (1)

Application Number Title Priority Date Filing Date
FR795189A Expired FR1226810A (fr) 1958-05-21 1959-05-21 Procédé de fabrication de semi-conducteurs et semi-conducteurs conformes à ceux obtenus

Country Status (5)

Country Link
US (1) US3167512A (fr)
CH (1) CH369830A (fr)
DE (1) DE1164680B (fr)
FR (1) FR1226810A (fr)
GB (1) GB902016A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2489374A1 (fr) * 1980-09-03 1982-03-05 Westinghouse Electric Corp Structures et materiaux semi-conducteurs haute tension et procede pour les preparer

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1544292C3 (de) * 1966-06-13 1976-01-08 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen stabförmiger Siliciumeinkristalle mit über die gesamte Stablänge homogener Antimondotierung
GB1542868A (en) * 1975-11-14 1979-03-28 Siemens Ag Production of phosphorus-doped monocrystalline silicon rods
US4094730A (en) * 1977-03-11 1978-06-13 The United States Of America As Represented By The Secretary Of The Air Force Method for fabrication of high minority carrier lifetime, low to moderate resistivity, single crystal silicon

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2730470A (en) * 1950-06-15 1956-01-10 Bell Telephone Labor Inc Method of making semi-conductor crystals
NL168491B (fr) * 1951-11-16 Roussel-Uclaf, Societe Anonyme Te Parijs.
US2792317A (en) * 1954-01-28 1957-05-14 Westinghouse Electric Corp Method of producing multiple p-n junctions
NL111118C (fr) * 1954-04-01
US2813048A (en) * 1954-06-24 1957-11-12 Bell Telephone Labor Inc Temperature gradient zone-melting
DE1018558B (de) * 1954-07-15 1957-10-31 Siemens Ag Verfahren zur Herstellung von Richtleitern, Transistoren u. dgl. aus einem Halbleiter
NL210334A (fr) * 1955-09-06

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2489374A1 (fr) * 1980-09-03 1982-03-05 Westinghouse Electric Corp Structures et materiaux semi-conducteurs haute tension et procede pour les preparer

Also Published As

Publication number Publication date
CH369830A (de) 1963-06-15
DE1164680B (de) 1964-03-05
GB902016A (en) 1962-07-25
US3167512A (en) 1965-01-26

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