FR1171253A - Procédé de fabrication de redresseurs et transistors à semi-conducteurs du type à jonction alliée - Google Patents
Procédé de fabrication de redresseurs et transistors à semi-conducteurs du type à jonction alliéeInfo
- Publication number
- FR1171253A FR1171253A FR1171253DA FR1171253A FR 1171253 A FR1171253 A FR 1171253A FR 1171253D A FR1171253D A FR 1171253DA FR 1171253 A FR1171253 A FR 1171253A
- Authority
- FR
- France
- Prior art keywords
- transistors
- manufacturing process
- type semiconductor
- junction type
- alloy junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000956 alloy Substances 0.000 title 1
- 229910045601 alloy Inorganic materials 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12528—Semiconductor component
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1299056A GB815335A (en) | 1957-01-24 | 1956-04-27 | Improvements in or relating to processes for the manufacture of alloy type semi-conductor rectifiers and transistors |
GB1299057 | 1957-01-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1171253A true FR1171253A (fr) | 1959-01-23 |
Family
ID=32328087
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1171253D Expired FR1171253A (fr) | 1956-04-27 | 1957-04-16 | Procédé de fabrication de redresseurs et transistors à semi-conducteurs du type à jonction alliée |
Country Status (3)
Country | Link |
---|---|
US (1) | US2887417A (fr) |
BE (1) | BE557039A (fr) |
FR (1) | FR1171253A (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB864222A (en) * | 1956-02-23 | 1961-03-29 | Post Office | Improvements in or relating to methods for the production of semi-conductor junctiondevices |
US2985550A (en) * | 1957-01-04 | 1961-05-23 | Texas Instruments Inc | Production of high temperature alloyed semiconductors |
US3060018A (en) * | 1960-04-01 | 1962-10-23 | Gen Motors Corp | Gold base alloy |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2757323A (en) * | 1952-02-07 | 1956-07-31 | Gen Electric | Full wave asymmetrical semi-conductor devices |
USRE24537E (en) * | 1952-07-29 | 1958-09-23 | Unsymmetrical conductor arrangements | |
BE527420A (fr) * | 1953-03-20 | |||
US2702360A (en) * | 1953-04-30 | 1955-02-15 | Rca Corp | Semiconductor rectifier |
GB785467A (en) * | 1954-12-23 | 1957-10-30 | Gen Electric Co Ltd | Improvements in or relating to the manufacture of semi-conductor devices |
US2825667A (en) * | 1955-05-10 | 1958-03-04 | Rca Corp | Methods of making surface alloyed semiconductor devices |
DE1153119B (de) * | 1955-08-05 | 1963-08-22 | Siemens Ag | Verfahren zur Herstellung einer Halbleiteranordnung |
-
0
- BE BE557039D patent/BE557039A/xx unknown
-
1957
- 1957-03-15 US US646393A patent/US2887417A/en not_active Expired - Lifetime
- 1957-04-16 FR FR1171253D patent/FR1171253A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
BE557039A (fr) | |
US2887417A (en) | 1959-05-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR1154894A (fr) | éléments semi-conducteurs à jonction soudée et procédé de fabrication | |
FR1220648A (fr) | Procédé de fabrication de barreaux semi-conducteurs monocristallins et barreaux conformes à ceux obtenus | |
FR1153749A (fr) | Procédé de fabrication d'éléments semi-conducteurs | |
FR1313638A (fr) | Procédé de fabrication de réseaux semi-conducteurs et réseaux obtenus | |
FR1233186A (fr) | Procédé de fabrication de semi-conducteurs | |
FR1253826A (fr) | Procédé de fabrication des fermetures à curseur | |
FR1180762A (fr) | Transistor à diffusion et son procédé de fabrication | |
FR1211393A (fr) | Dispositifs semi-conducteurs et procédé de fabrication de ces derniers | |
FR1171253A (fr) | Procédé de fabrication de redresseurs et transistors à semi-conducteurs du type à jonction alliée | |
FR1182597A (fr) | Dispositif semi-conducteur et procédé de fabrication de ce dispositif | |
FR1147942A (fr) | Fabrication de transistors à jonctions | |
FR1173399A (fr) | Procédé de fabrication d'appareils semi-conducteurs | |
FR1155086A (fr) | Perfectionnements aux procédés de fabrication de redresseurs à semi-conducteur | |
FR1226810A (fr) | Procédé de fabrication de semi-conducteurs et semi-conducteurs conformes à ceux obtenus | |
FR1066234A (fr) | Procédé de fabrication de redresseurs à cristaux semi-conducteurs et redresseurs correspondants ainsi fabriqués | |
CH337162A (fr) | Vêtement et procédé de fabrication de ce vêtement | |
FR1152585A (fr) | Procédé de fabrication de redresseurs au sélénium | |
CH345080A (fr) | Dispositif semi-conducteur et procédé de fabrication de celui-ci | |
FR1212132A (fr) | Perfectionnements aux dispositifs semi-conducteurs à jonction et méthode de fabrication de ceux-ci | |
FR1127036A (fr) | Procédé de fabrication d'alliages semi-conducteurs | |
FR1229143A (fr) | Procédé de fabrication d'organes à semi-conducteurs, notamment de transistrons, et organes obtenus | |
FR1186472A (fr) | Procédé de fabrication d'un transistor à diffusion et transistor conforme à celui obtenu | |
FR1166282A (fr) | Procédé de fabrication d'éléments semi-conducteurs | |
FR1192658A (fr) | Procédé pour la fabrication de redresseurs à semi-conducteurs | |
FR1327004A (fr) | Procédé de fabrication de 17beta-hydroxy-17alpha-alkynyl-stéroïdes de l'androstane et du 3,5-cyclo-androstane |