FR1173399A - Procédé de fabrication d'appareils semi-conducteurs - Google Patents

Procédé de fabrication d'appareils semi-conducteurs

Info

Publication number
FR1173399A
FR1173399A FR1173399DA FR1173399A FR 1173399 A FR1173399 A FR 1173399A FR 1173399D A FR1173399D A FR 1173399DA FR 1173399 A FR1173399 A FR 1173399A
Authority
FR
France
Prior art keywords
semiconductor device
manufacturing process
device manufacturing
semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Space Systems Loral LLC
Original Assignee
Philco Ford Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philco Ford Corp filed Critical Philco Ford Corp
Application granted granted Critical
Publication of FR1173399A publication Critical patent/FR1173399A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
FR1173399D 1956-05-04 1957-03-28 Procédé de fabrication d'appareils semi-conducteurs Expired FR1173399A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US582723A US2930108A (en) 1956-05-04 1956-05-04 Method for fabricating semiconductive devices

Publications (1)

Publication Number Publication Date
FR1173399A true FR1173399A (fr) 1959-02-24

Family

ID=24330269

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1173399D Expired FR1173399A (fr) 1956-05-04 1957-03-28 Procédé de fabrication d'appareils semi-conducteurs

Country Status (5)

Country Link
US (1) US2930108A (fr)
DE (1) DE1125551B (fr)
FR (1) FR1173399A (fr)
GB (1) GB847628A (fr)
NL (2) NL216978A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1199407B (de) * 1959-01-20 1965-08-26 Siemens Ag Verfahren zum Abtragen eines Halbleiterkoerpers mit pn-UEbergang eines Halbleiterbauelements durch AEtzen

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB936181A (en) * 1959-05-19 1963-09-04 Nat Res Dev Improvements in and relating to solid-state electrical devices
US3131454A (en) * 1959-11-12 1964-05-05 Philco Corp Semiconductor device and method for the fabrication thereof
GB914832A (en) * 1959-12-11 1963-01-09 Gen Electric Improvements in semiconductor devices and method of fabricating the same
US3154437A (en) * 1961-01-17 1964-10-27 Philco Corp Method for introducing an activator impurity substance into a portion of a body of crystalline semiconductive material and for bonding a lead member to said portion
US3212160A (en) * 1962-05-18 1965-10-19 Transitron Electronic Corp Method of manufacturing semiconductive devices
US4966142A (en) * 1989-06-30 1990-10-30 Trustees Of Boston University Method for electrically joining superconductors to themselves, to normal conductors, and to semi-conductors

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE506280A (fr) * 1950-10-10
DE906955C (de) * 1952-03-28 1954-02-04 Licentia Gmbh Verfahren zur Erzeugung groesserer zusammenhaengender defektleitender Bereiche in den Aussenschichten von ueberschussleitenden Germaniumkristallen
US2750542A (en) * 1953-04-02 1956-06-12 Rca Corp Unipolar semiconductor devices
GB761795A (en) * 1954-03-09 1956-11-21 Gen Electric Co Ltd Improvements in or relating to the manufacture of semi-conductor devices
FR1109512A (fr) * 1954-07-28 1956-01-30 Csf Perfectionnement aux transistors à jonctions et à leurs procédés de fabrication

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1199407B (de) * 1959-01-20 1965-08-26 Siemens Ag Verfahren zum Abtragen eines Halbleiterkoerpers mit pn-UEbergang eines Halbleiterbauelements durch AEtzen

Also Published As

Publication number Publication date
DE1125551B (de) 1962-03-15
NL111786C (fr)
GB847628A (en) 1960-09-14
US2930108A (en) 1960-03-29
NL216978A (fr)

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