FR1229143A - Procédé de fabrication d'organes à semi-conducteurs, notamment de transistrons, et organes obtenus - Google Patents
Procédé de fabrication d'organes à semi-conducteurs, notamment de transistrons, et organes obtenusInfo
- Publication number
- FR1229143A FR1229143A FR798872A FR798872A FR1229143A FR 1229143 A FR1229143 A FR 1229143A FR 798872 A FR798872 A FR 798872A FR 798872 A FR798872 A FR 798872A FR 1229143 A FR1229143 A FR 1229143A
- Authority
- FR
- France
- Prior art keywords
- organs
- transistrons
- manufacturing semiconductor
- organs obtained
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 210000000056 organ Anatomy 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Formation Of Insulating Films (AREA)
- Catalysts (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US750893A US3019142A (en) | 1958-07-25 | 1958-07-25 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1229143A true FR1229143A (fr) | 1960-09-05 |
Family
ID=25019560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR798872A Expired FR1229143A (fr) | 1958-07-25 | 1959-06-30 | Procédé de fabrication d'organes à semi-conducteurs, notamment de transistrons, et organes obtenus |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3019142A (fr) |
| DE (1) | DE1204495B (fr) |
| FR (1) | FR1229143A (fr) |
| GB (1) | GB892028A (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3870576A (en) * | 1970-04-29 | 1975-03-11 | Ilya Leonidovich Isitovsky | Method of making a profiled p-n junction in a plate of semiconductive material |
| US4632710A (en) * | 1983-05-10 | 1986-12-30 | Raytheon Company | Vapor phase epitaxial growth of carbon doped layers of Group III-V materials |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2656496A (en) * | 1951-07-31 | 1953-10-20 | Bell Telephone Labor Inc | Semiconductor translating device |
| NL99619C (fr) * | 1955-06-28 | |||
| US2806807A (en) * | 1955-08-23 | 1957-09-17 | Gen Electric | Method of making contacts to semiconductor bodies |
| US2828232A (en) * | 1956-05-01 | 1958-03-25 | Hughes Aircraft Co | Method for producing junctions in semi-conductor device |
-
1958
- 1958-07-25 US US750893A patent/US3019142A/en not_active Expired - Lifetime
-
1959
- 1959-06-26 GB GB22071/59A patent/GB892028A/en not_active Expired
- 1959-06-30 FR FR798872A patent/FR1229143A/fr not_active Expired
- 1959-07-16 DE DEB54040A patent/DE1204495B/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE1204495B (de) | 1965-11-04 |
| US3019142A (en) | 1962-01-30 |
| GB892028A (en) | 1962-03-21 |
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