FR1154894A - éléments semi-conducteurs à jonction soudée et procédé de fabrication - Google Patents
éléments semi-conducteurs à jonction soudée et procédé de fabricationInfo
- Publication number
- FR1154894A FR1154894A FR1154894DA FR1154894A FR 1154894 A FR1154894 A FR 1154894A FR 1154894D A FR1154894D A FR 1154894DA FR 1154894 A FR1154894 A FR 1154894A
- Authority
- FR
- France
- Prior art keywords
- welded
- manufacture
- semiconductor elements
- junction semiconductor
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/965—Shaped junction formation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12528—Semiconductor component
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US53232455A | 1955-09-02 | 1955-09-02 | |
US698494A US2854366A (en) | 1955-09-02 | 1957-11-25 | Method of making fused junction semiconductor devices |
US698874A US3088856A (en) | 1955-09-02 | 1957-11-25 | Fused junction semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1154894A true FR1154894A (fr) | 1958-04-17 |
Family
ID=27415088
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1154894D Expired FR1154894A (fr) | 1955-09-02 | 1956-06-30 | éléments semi-conducteurs à jonction soudée et procédé de fabrication |
Country Status (6)
Country | Link |
---|---|
US (2) | US3088856A (fr) |
BE (1) | BE549320A (fr) |
CH (1) | CH356210A (fr) |
FR (1) | FR1154894A (fr) |
GB (1) | GB809521A (fr) |
NL (2) | NL102391C (fr) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL222571A (fr) * | 1956-03-05 | 1900-01-01 | ||
US3187241A (en) * | 1957-03-27 | 1965-06-01 | Rca Corp | Transistor with emitter at bottom of groove extending crosswise the base |
US2967985A (en) * | 1957-04-11 | 1961-01-10 | Shockley | Transistor structure |
US3054033A (en) * | 1957-05-21 | 1962-09-11 | Sony Corp | Junction type semiconductor device |
US3041226A (en) * | 1958-04-02 | 1962-06-26 | Hughes Aircraft Co | Method of preparing semiconductor crystals |
US2974072A (en) * | 1958-06-27 | 1961-03-07 | Ibm | Semiconductor connection fabrication |
US2937963A (en) * | 1958-07-14 | 1960-05-24 | Int Rectifier Corp | Temperature compensating zener diode construction |
US2986481A (en) * | 1958-08-04 | 1961-05-30 | Hughes Aircraft Co | Method of making semiconductor devices |
NL241982A (fr) * | 1958-08-13 | 1900-01-01 | ||
US3225416A (en) * | 1958-11-20 | 1965-12-28 | Int Rectifier Corp | Method of making a transistor containing a multiplicity of depressions |
US3009841A (en) * | 1959-03-06 | 1961-11-21 | Westinghouse Electric Corp | Preparation of semiconductor devices having uniform junctions |
US3143443A (en) * | 1959-05-01 | 1964-08-04 | Hughes Aircraft Co | Method of fabricating semiconductor devices |
US3154692A (en) * | 1960-01-08 | 1964-10-27 | Clevite Corp | Voltage regulating semiconductor device |
NL278654A (fr) * | 1961-06-08 | |||
US3220896A (en) * | 1961-07-17 | 1965-11-30 | Raytheon Co | Transistor |
US3254276A (en) * | 1961-11-29 | 1966-05-31 | Philco Corp | Solid-state translating device with barrier-layers formed by thin metal and semiconductor material |
US3240601A (en) * | 1962-03-07 | 1966-03-15 | Corning Glass Works | Electroconductive coating patterning |
GB927380A (en) * | 1962-03-21 | 1963-05-29 | Mullard Ltd | Improvements in or relating to solders |
US3258660A (en) * | 1962-06-20 | 1966-06-28 | Tunnel diode devices with junctions formed on predetermined paces | |
US3163916A (en) * | 1962-06-22 | 1965-01-05 | Int Rectifier Corp | Unijunction transistor device |
BE635380A (fr) * | 1962-07-24 | |||
CH427042A (de) * | 1963-09-25 | 1966-12-31 | Licentia Gmbh | Halbleiterbauelement mit einem Halbleiterkörper aus drei oder mehr Zonen abwechselnd entgegengesetzten Leitfähigkeitstyps |
US3386864A (en) * | 1963-12-09 | 1968-06-04 | Ibm | Semiconductor-metal-semiconductor structure |
US3416979A (en) * | 1964-08-31 | 1968-12-17 | Matsushita Electric Ind Co Ltd | Method of making a variable capacitance silicon diode with hyper abrupt junction |
US3370995A (en) * | 1965-08-02 | 1968-02-27 | Texas Instruments Inc | Method for fabricating electrically isolated semiconductor devices in integrated circuits |
US3322581A (en) * | 1965-10-24 | 1967-05-30 | Texas Instruments Inc | Fabrication of a metal base transistor |
US3423651A (en) * | 1966-01-13 | 1969-01-21 | Raytheon Co | Microcircuit with complementary dielectrically isolated mesa-type active elements |
US3407343A (en) * | 1966-03-28 | 1968-10-22 | Ibm | Insulated-gate field effect transistor exhibiting a maximum source-drain conductance at a critical gate bias voltage |
US3535176A (en) * | 1968-12-19 | 1970-10-20 | Mallory & Co Inc P R | Surface conditioning of silicon for electroless nickel plating |
NL7013227A (fr) * | 1970-09-08 | 1972-03-10 | Philips Nv | |
DE2332822B2 (de) * | 1973-06-28 | 1978-04-27 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Herstellen von diffundierten, kontaktierten und oberflächenpassivierten Halbleiterbauelementen aus Halbleiterscheiben aus Silizium |
WO1998010463A1 (fr) * | 1996-09-05 | 1998-03-12 | Regents Of The University Of Michigan | Germanes et dopage par les germanes |
US6197983B1 (en) * | 1996-09-05 | 2001-03-06 | The Regents Of The University Of Michigan | Germanes and doping with germanes |
US11387373B2 (en) * | 2019-07-29 | 2022-07-12 | Nxp Usa, Inc. | Low drain-source on resistance semiconductor component and method of fabrication |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL178757B (nl) * | 1952-06-02 | British Steel Corp | Werkwijze en inrichting voor het continu produceren van een metaalstrook uit metaalpoeder. | |
US2750542A (en) * | 1953-04-02 | 1956-06-12 | Rca Corp | Unipolar semiconductor devices |
BE529698A (fr) * | 1953-06-19 | |||
US2829992A (en) * | 1954-02-02 | 1958-04-08 | Hughes Aircraft Co | Fused junction semiconductor devices and method of making same |
US2846346A (en) * | 1954-03-26 | 1958-08-05 | Philco Corp | Semiconductor device |
USRE25633E (en) * | 1954-09-29 | 1964-08-25 | Process for making fused junction | |
BE544843A (fr) * | 1955-02-25 | |||
US2820135A (en) * | 1956-09-05 | 1958-01-14 | Pacific Semiconductors Inc | Method for producing electrical contact to semiconductor devices |
-
0
- NL NL209275D patent/NL209275A/xx unknown
- BE BE549320D patent/BE549320A/xx unknown
- NL NL102391D patent/NL102391C/xx active
-
1956
- 1956-06-30 FR FR1154894D patent/FR1154894A/fr not_active Expired
- 1956-07-05 CH CH356210D patent/CH356210A/fr unknown
- 1956-08-30 GB GB26576/56A patent/GB809521A/en not_active Expired
-
1957
- 1957-11-25 US US698874A patent/US3088856A/en not_active Expired - Lifetime
- 1957-11-25 US US698494A patent/US2854366A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US2854366A (en) | 1958-09-30 |
NL102391C (fr) | |
US3088856A (en) | 1963-05-07 |
BE549320A (fr) | |
GB809521A (en) | 1959-02-25 |
CH356210A (fr) | 1961-08-15 |
NL209275A (fr) |
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