CH356210A - Procédé d'obtention d'une jonction p-n dans un corps semi-conducteur - Google Patents

Procédé d'obtention d'une jonction p-n dans un corps semi-conducteur

Info

Publication number
CH356210A
CH356210A CH356210DA CH356210A CH 356210 A CH356210 A CH 356210A CH 356210D A CH356210D A CH 356210DA CH 356210 A CH356210 A CH 356210A
Authority
CH
Switzerland
Prior art keywords
junction
obtaining
semiconductor body
semiconductor
Prior art date
Application number
Other languages
English (en)
Inventor
P Waters Warren
L Wannlund Arthur
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of CH356210A publication Critical patent/CH356210A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/965—Shaped junction formation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CH356210D 1955-09-02 1956-07-05 Procédé d'obtention d'une jonction p-n dans un corps semi-conducteur CH356210A (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US53232455A 1955-09-02 1955-09-02
US698494A US2854366A (en) 1955-09-02 1957-11-25 Method of making fused junction semiconductor devices
US698874A US3088856A (en) 1955-09-02 1957-11-25 Fused junction semiconductor devices

Publications (1)

Publication Number Publication Date
CH356210A true CH356210A (fr) 1961-08-15

Family

ID=27415088

Family Applications (1)

Application Number Title Priority Date Filing Date
CH356210D CH356210A (fr) 1955-09-02 1956-07-05 Procédé d'obtention d'une jonction p-n dans un corps semi-conducteur

Country Status (6)

Country Link
US (2) US2854366A (fr)
BE (1) BE549320A (fr)
CH (1) CH356210A (fr)
FR (1) FR1154894A (fr)
GB (1) GB809521A (fr)
NL (2) NL102391C (fr)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL222571A (fr) * 1956-03-05 1900-01-01
US3187241A (en) * 1957-03-27 1965-06-01 Rca Corp Transistor with emitter at bottom of groove extending crosswise the base
US2967985A (en) * 1957-04-11 1961-01-10 Shockley Transistor structure
US3054033A (en) * 1957-05-21 1962-09-11 Sony Corp Junction type semiconductor device
US3041226A (en) * 1958-04-02 1962-06-26 Hughes Aircraft Co Method of preparing semiconductor crystals
US2974072A (en) * 1958-06-27 1961-03-07 Ibm Semiconductor connection fabrication
US2937963A (en) * 1958-07-14 1960-05-24 Int Rectifier Corp Temperature compensating zener diode construction
US2986481A (en) * 1958-08-04 1961-05-30 Hughes Aircraft Co Method of making semiconductor devices
NL241982A (fr) * 1958-08-13 1900-01-01
US3225416A (en) * 1958-11-20 1965-12-28 Int Rectifier Corp Method of making a transistor containing a multiplicity of depressions
US3009841A (en) * 1959-03-06 1961-11-21 Westinghouse Electric Corp Preparation of semiconductor devices having uniform junctions
US3143443A (en) * 1959-05-01 1964-08-04 Hughes Aircraft Co Method of fabricating semiconductor devices
US3154692A (en) * 1960-01-08 1964-10-27 Clevite Corp Voltage regulating semiconductor device
NL278654A (fr) * 1961-06-08
US3220896A (en) * 1961-07-17 1965-11-30 Raytheon Co Transistor
US3254276A (en) * 1961-11-29 1966-05-31 Philco Corp Solid-state translating device with barrier-layers formed by thin metal and semiconductor material
US3240601A (en) * 1962-03-07 1966-03-15 Corning Glass Works Electroconductive coating patterning
GB927380A (en) * 1962-03-21 1963-05-29 Mullard Ltd Improvements in or relating to solders
US3258660A (en) * 1962-06-20 1966-06-28 Tunnel diode devices with junctions formed on predetermined paces
US3163916A (en) * 1962-06-22 1965-01-05 Int Rectifier Corp Unijunction transistor device
BE635380A (fr) * 1962-07-24
CH427042A (de) * 1963-09-25 1966-12-31 Licentia Gmbh Halbleiterbauelement mit einem Halbleiterkörper aus drei oder mehr Zonen abwechselnd entgegengesetzten Leitfähigkeitstyps
US3386864A (en) * 1963-12-09 1968-06-04 Ibm Semiconductor-metal-semiconductor structure
US3416979A (en) * 1964-08-31 1968-12-17 Matsushita Electric Ind Co Ltd Method of making a variable capacitance silicon diode with hyper abrupt junction
US3370995A (en) * 1965-08-02 1968-02-27 Texas Instruments Inc Method for fabricating electrically isolated semiconductor devices in integrated circuits
US3322581A (en) * 1965-10-24 1967-05-30 Texas Instruments Inc Fabrication of a metal base transistor
US3423651A (en) * 1966-01-13 1969-01-21 Raytheon Co Microcircuit with complementary dielectrically isolated mesa-type active elements
US3407343A (en) * 1966-03-28 1968-10-22 Ibm Insulated-gate field effect transistor exhibiting a maximum source-drain conductance at a critical gate bias voltage
US3535176A (en) * 1968-12-19 1970-10-20 Mallory & Co Inc P R Surface conditioning of silicon for electroless nickel plating
NL7013227A (fr) * 1970-09-08 1972-03-10 Philips Nv
DE2332822B2 (de) * 1973-06-28 1978-04-27 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen von diffundierten, kontaktierten und oberflächenpassivierten Halbleiterbauelementen aus Halbleiterscheiben aus Silizium
US6197983B1 (en) * 1996-09-05 2001-03-06 The Regents Of The University Of Michigan Germanes and doping with germanes
AU7359296A (en) * 1996-09-05 1998-03-26 University Of Michigan, The Germanes and doping with germanes
US11387373B2 (en) * 2019-07-29 2022-07-12 Nxp Usa, Inc. Low drain-source on resistance semiconductor component and method of fabrication

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE520380A (fr) * 1952-06-02
US2750542A (en) * 1953-04-02 1956-06-12 Rca Corp Unipolar semiconductor devices
BE529698A (fr) * 1953-06-19
US2829992A (en) * 1954-02-02 1958-04-08 Hughes Aircraft Co Fused junction semiconductor devices and method of making same
US2846346A (en) * 1954-03-26 1958-08-05 Philco Corp Semiconductor device
USRE25633E (en) * 1954-09-29 1964-08-25 Process for making fused junction
BE544843A (fr) * 1955-02-25
US2820135A (en) * 1956-09-05 1958-01-14 Pacific Semiconductors Inc Method for producing electrical contact to semiconductor devices

Also Published As

Publication number Publication date
BE549320A (fr)
FR1154894A (fr) 1958-04-17
NL102391C (fr)
NL209275A (fr)
US2854366A (en) 1958-09-30
US3088856A (en) 1963-05-07
GB809521A (en) 1959-02-25

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