FR1182597A - Dispositif semi-conducteur et procédé de fabrication de ce dispositif - Google Patents

Dispositif semi-conducteur et procédé de fabrication de ce dispositif

Info

Publication number
FR1182597A
FR1182597A FR1182597DA FR1182597A FR 1182597 A FR1182597 A FR 1182597A FR 1182597D A FR1182597D A FR 1182597DA FR 1182597 A FR1182597 A FR 1182597A
Authority
FR
France
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Application granted granted Critical
Publication of FR1182597A publication Critical patent/FR1182597A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H01L29/245—Pb compounds, e.g. PbO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
FR1182597D 1956-10-01 1957-09-11 Dispositif semi-conducteur et procédé de fabrication de ce dispositif Expired FR1182597A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US613102A US3001894A (en) 1956-10-01 1956-10-01 Semiconductor device and method of making same

Publications (1)

Publication Number Publication Date
FR1182597A true FR1182597A (fr) 1959-06-26

Family

ID=24455862

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1182597D Expired FR1182597A (fr) 1956-10-01 1957-09-11 Dispositif semi-conducteur et procédé de fabrication de ce dispositif

Country Status (7)

Country Link
US (1) US3001894A (fr)
BE (1) BE560901A (fr)
CH (1) CH369214A (fr)
DE (1) DE1093016B (fr)
FR (1) FR1182597A (fr)
GB (1) GB825674A (fr)
NL (2) NL221194A (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL259311A (fr) * 1959-12-21
US3175934A (en) * 1960-01-19 1965-03-30 Hitachi Ltd Semiconductor switching element and process for producing the same
DE1154876B (de) * 1960-08-04 1963-09-26 Telefunken Patent Transistor, insbesondere Schalttransistor, und Verfahren zu seinem Herstellen
US3207635A (en) * 1961-04-19 1965-09-21 Ibm Tunnel diode and process therefor
BE632279A (fr) * 1962-05-14
NL297607A (fr) * 1962-09-07
NL298354A (fr) * 1963-03-29

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE500302A (fr) * 1949-11-30
US2654059A (en) * 1951-05-26 1953-09-29 Bell Telephone Labor Inc Semiconductor signal translating device
DE894293C (de) * 1951-06-29 1953-10-22 Western Electric Co Verfahren zur Herstellung eines Kristalls aus Halbleitermaterial
BE510303A (fr) * 1951-11-16
US2784121A (en) * 1952-11-20 1957-03-05 Bell Telephone Labor Inc Method of fabricating semiconductor bodies for translating devices
NL184367B (nl) * 1953-01-16 Inst Francais Du Petrole Werkwijze voor de bereiding van een lichter gemaakte, geharde harssamenstelling en werkwijze voor de vervaardiging van tegen hydrostatische druk bestendige voorwerpen.
BE532474A (fr) * 1953-10-13
NL216667A (fr) * 1956-04-25
US2836523A (en) * 1956-08-02 1958-05-27 Bell Telephone Labor Inc Manufacture of semiconductive devices

Also Published As

Publication number Publication date
DE1093016B (de) 1960-11-17
GB825674A (en) 1959-12-16
BE560901A (fr)
NL221194A (fr)
US3001894A (en) 1961-09-26
CH369214A (fr) 1963-05-15
NL107669C (fr)

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