FR1319897A - Dispositif semiconducteur et son procédé de fabrication - Google Patents

Dispositif semiconducteur et son procédé de fabrication

Info

Publication number
FR1319897A
FR1319897A FR894797A FR894797A FR1319897A FR 1319897 A FR1319897 A FR 1319897A FR 894797 A FR894797 A FR 894797A FR 894797 A FR894797 A FR 894797A FR 1319897 A FR1319897 A FR 1319897A
Authority
FR
France
Prior art keywords
semiconductor device
manufacturing process
manufacturing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR894797A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Clevite Corp
Original Assignee
Clevite Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clevite Corp filed Critical Clevite Corp
Application granted granted Critical
Publication of FR1319897A publication Critical patent/FR1319897A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817—Thyristors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
FR894797A 1961-05-18 1962-04-17 Dispositif semiconducteur et son procédé de fabrication Expired FR1319897A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US110991A US3152928A (en) 1961-05-18 1961-05-18 Semiconductor device and method

Publications (1)

Publication Number Publication Date
FR1319897A true FR1319897A (fr) 1963-03-01

Family

ID=22336035

Family Applications (1)

Application Number Title Priority Date Filing Date
FR894797A Expired FR1319897A (fr) 1961-05-18 1962-04-17 Dispositif semiconducteur et son procédé de fabrication

Country Status (4)

Country Link
US (1) US3152928A (fr)
DE (1) DE1207502B (fr)
FR (1) FR1319897A (fr)
GB (2) GB1012124A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2006089A1 (fr) * 1968-04-11 1969-12-19 Westinghouse Electric Corp Dispositif semi-conducteur et procede de fabrication correspondant
DE2310453A1 (de) * 1973-03-02 1974-09-26 Licentia Gmbh Verfahren zum herstellen eines gegen ueberspannungen geschuetzten halbleiterbauelementes

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL272752A (fr) * 1960-12-20
BE623677A (fr) * 1961-10-20
US3237062A (en) * 1961-10-20 1966-02-22 Westinghouse Electric Corp Monolithic semiconductor devices
US3316131A (en) * 1963-08-15 1967-04-25 Texas Instruments Inc Method of producing a field-effect transistor
GB1040400A (en) * 1963-11-27 1966-08-24 Standard Telephones Cables Ltd Semiconductor device
NL143074B (nl) * 1963-12-13 1974-08-15 Philips Nv Transistor.
DE1464926B2 (de) * 1963-12-14 1973-08-02 Fujitsu Ltd , Kawasaki, Kanagawa (Japan) Verfahren zum herstellen eines siliziumtransistors
US3409482A (en) * 1964-12-30 1968-11-05 Sprague Electric Co Method of making a transistor with a very thin diffused base and an epitaxially grown emitter
US3354006A (en) * 1965-03-01 1967-11-21 Texas Instruments Inc Method of forming a diode by using a mask and diffusion
US3688164A (en) * 1969-10-01 1972-08-29 Hitachi Ltd Multi-layer-type switch device
US3641403A (en) * 1970-05-25 1972-02-08 Mitsubishi Electric Corp Thyristor with degenerate semiconductive region
JPS5510984B2 (fr) * 1972-11-29 1980-03-21
JPS54757B2 (fr) * 1973-03-23 1979-01-16
DE2926734C2 (de) * 1979-07-03 1982-09-09 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Thyristor mit einem durch plastische Verformung erzeugten pn-Übergang und Verfahren zu einer Herstellung
JPS5732606Y2 (fr) * 1981-04-15 1982-07-17
GB8713440D0 (en) * 1987-06-09 1987-07-15 Texas Instruments Ltd Semiconductor device
US5479031A (en) * 1993-09-10 1995-12-26 Teccor Electronics, Inc. Four layer overvoltage protection device having buried regions aligned with shorting dots to increase the accuracy of overshoot voltage value

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1037293A (fr) * 1951-05-19 1953-09-15 Licentia Gmbh Redresseur sec à contrôle électrique et son procédé de fabrication
BE545324A (fr) * 1955-02-18
US2980830A (en) * 1956-08-22 1961-04-18 Shockley William Junction transistor
NL237230A (fr) * 1958-03-19
DE1097571B (de) * 1959-04-13 1961-01-19 Shockley Transistor Corp Flaechentransistor mit drei Zonen abwechselnden Leitfaehigkeitstyps
FR1263548A (fr) * 1959-07-14 1961-06-09 Ericsson Telefon Ab L M Dispositif semi-conducteur du type pnpn et son procédé de fabrication
NL253834A (fr) * 1959-07-21 1900-01-01
FR1245720A (fr) * 1959-09-30 1960-11-10 Nouvelles structures pour transistor à effet de champ
NL260481A (fr) * 1960-02-08

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2006089A1 (fr) * 1968-04-11 1969-12-19 Westinghouse Electric Corp Dispositif semi-conducteur et procede de fabrication correspondant
DE2310453A1 (de) * 1973-03-02 1974-09-26 Licentia Gmbh Verfahren zum herstellen eines gegen ueberspannungen geschuetzten halbleiterbauelementes

Also Published As

Publication number Publication date
GB1012124A (en) 1965-12-08
DE1207502B (de) 1965-12-23
US3152928A (en) 1964-10-13
GB1012123A (en) 1965-12-08

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