FR1263548A - Dispositif semi-conducteur du type pnpn et son procédé de fabrication - Google Patents

Dispositif semi-conducteur du type pnpn et son procédé de fabrication

Info

Publication number
FR1263548A
FR1263548A FR832935A FR832935A FR1263548A FR 1263548 A FR1263548 A FR 1263548A FR 832935 A FR832935 A FR 832935A FR 832935 A FR832935 A FR 832935A FR 1263548 A FR1263548 A FR 1263548A
Authority
FR
France
Prior art keywords
pnpn
semiconductor device
manufacturing process
type semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR832935A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefonaktiebolaget LM Ericsson AB
Original Assignee
Telefonaktiebolaget LM Ericsson AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefonaktiebolaget LM Ericsson AB filed Critical Telefonaktiebolaget LM Ericsson AB
Priority to FR832935A priority Critical patent/FR1263548A/fr
Application granted granted Critical
Publication of FR1263548A publication Critical patent/FR1263548A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
FR832935A 1959-07-14 1960-07-13 Dispositif semi-conducteur du type pnpn et son procédé de fabrication Expired FR1263548A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR832935A FR1263548A (fr) 1959-07-14 1960-07-13 Dispositif semi-conducteur du type pnpn et son procédé de fabrication

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE662059 1959-07-14
FR832935A FR1263548A (fr) 1959-07-14 1960-07-13 Dispositif semi-conducteur du type pnpn et son procédé de fabrication

Publications (1)

Publication Number Publication Date
FR1263548A true FR1263548A (fr) 1961-06-09

Family

ID=26186792

Family Applications (1)

Application Number Title Priority Date Filing Date
FR832935A Expired FR1263548A (fr) 1959-07-14 1960-07-13 Dispositif semi-conducteur du type pnpn et son procédé de fabrication

Country Status (1)

Country Link
FR (1) FR1263548A (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1185292B (de) * 1961-04-20 1965-01-14 Ibm Doppelhalbleiterbauelement mit einem Esaki-UEbergang und einem parallel geschalteten weiteren UEbergang
DE1194500B (de) * 1961-04-07 1965-06-10 Intermetall Halbleiterbauelement mit einer Mehrzahl von eingesetzten streifenfoermigen Zonen eines Leitfaehigkeitstyps und Verfahren zum Herstellen
DE1207502B (de) * 1961-05-18 1965-12-23 Int Standard Electric Corp Flaechenhaftes Halbleiterbauelement mit mindestens einem sperrenden pn-UEbergang und Verfahren zum Herstellen
DE1211335B (de) * 1962-07-16 1966-02-24 Elektronik M B H Halbleiterbauelement mit mindestens einem pn-UEbergang und mit einer Oberflaechenschicht aus Siliziumoxyd und Verfahren zum Herstellen
DE1236080B (de) * 1963-08-01 1967-03-09 Siemens Ag Halbleiterbauelement mit mindestens zwei pn-UEbergaengen und mit mindestens einer schwaecher dotierten Zone und Verfahren zum Herstellen
US3470036A (en) * 1964-05-15 1969-09-30 Asea Ab Rectifying semi-conductor body
DE2425540A1 (de) * 1974-05-03 1975-11-13 Bbc Brown Boveri & Cie Mehrzonenhalbleiterbauelement

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1194500B (de) * 1961-04-07 1965-06-10 Intermetall Halbleiterbauelement mit einer Mehrzahl von eingesetzten streifenfoermigen Zonen eines Leitfaehigkeitstyps und Verfahren zum Herstellen
DE1185292B (de) * 1961-04-20 1965-01-14 Ibm Doppelhalbleiterbauelement mit einem Esaki-UEbergang und einem parallel geschalteten weiteren UEbergang
DE1207502B (de) * 1961-05-18 1965-12-23 Int Standard Electric Corp Flaechenhaftes Halbleiterbauelement mit mindestens einem sperrenden pn-UEbergang und Verfahren zum Herstellen
DE1211335B (de) * 1962-07-16 1966-02-24 Elektronik M B H Halbleiterbauelement mit mindestens einem pn-UEbergang und mit einer Oberflaechenschicht aus Siliziumoxyd und Verfahren zum Herstellen
DE1236080B (de) * 1963-08-01 1967-03-09 Siemens Ag Halbleiterbauelement mit mindestens zwei pn-UEbergaengen und mit mindestens einer schwaecher dotierten Zone und Verfahren zum Herstellen
US3470036A (en) * 1964-05-15 1969-09-30 Asea Ab Rectifying semi-conductor body
DE2425540A1 (de) * 1974-05-03 1975-11-13 Bbc Brown Boveri & Cie Mehrzonenhalbleiterbauelement

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