CH377003A - Transistor et procédé de fabrication dudit transistor - Google Patents

Transistor et procédé de fabrication dudit transistor

Info

Publication number
CH377003A
CH377003A CH8085059A CH8085059A CH377003A CH 377003 A CH377003 A CH 377003A CH 8085059 A CH8085059 A CH 8085059A CH 8085059 A CH8085059 A CH 8085059A CH 377003 A CH377003 A CH 377003A
Authority
CH
Switzerland
Prior art keywords
transistor
manufacturing
Prior art date
Application number
CH8085059A
Other languages
English (en)
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of CH377003A publication Critical patent/CH377003A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/919—Compensation doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
CH8085059A 1958-11-20 1959-11-20 Transistor et procédé de fabrication dudit transistor CH377003A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US775164A US2956913A (en) 1958-11-20 1958-11-20 Transistor and method of making same

Publications (1)

Publication Number Publication Date
CH377003A true CH377003A (fr) 1964-04-30

Family

ID=25103519

Family Applications (1)

Application Number Title Priority Date Filing Date
CH8085059A CH377003A (fr) 1958-11-20 1959-11-20 Transistor et procédé de fabrication dudit transistor

Country Status (3)

Country Link
US (1) US2956913A (fr)
CH (1) CH377003A (fr)
GB (1) GB878792A (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL262701A (fr) * 1960-03-25
US3098954A (en) * 1960-04-27 1963-07-23 Texas Instruments Inc Mesa type transistor and method of fabrication thereof
DE1250002B (de) * 1960-11-04 1967-09-14 International Business Machines Corporation, Armonk, NY (V St A) I Diffusionsverfahren zum Herstellen einer Esaki Diode und nach diesem Verfahren hergestellte Esaki-Diode
DE1160106B (de) * 1960-11-11 1963-12-27 Intermetall Halbleiterverstaerker mit flaechenhaften pn-UEbergaengen mit Tunnelcharakteristik und Verfahren zum Herstellen
US3225198A (en) * 1961-05-16 1965-12-21 Hughes Aircraft Co Method of measuring nuclear radiation utilizing a semiconductor crystal having a lithium compensated intrinsic region
US3173816A (en) * 1961-08-04 1965-03-16 Motorola Inc Method for fabricating alloyed junction semiconductor assemblies
DE1199897B (de) * 1962-04-03 1965-09-02 Philips Nv Verfahren zur Herstellung einer Sperrschicht in einem n-leitenden Cadmiumsulfidkoerper
NL298286A (fr) * 1962-09-24
NL298006A (fr) * 1962-12-07 1900-01-01
US3473093A (en) * 1965-08-18 1969-10-14 Ibm Semiconductor device having compensated barrier zones between n-p junctions
US3658606A (en) * 1969-04-01 1972-04-25 Ibm Diffusion source and method of producing same
JPS49108969A (fr) * 1973-02-07 1974-10-16
JPS6011457B2 (ja) * 1973-04-02 1985-03-26 株式会社日立製作所 デイポジシヨン法
US3897286A (en) * 1974-06-21 1975-07-29 Gen Electric Method of aligning edges of emitter and its metalization in a semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL196136A (fr) * 1954-04-01
NL207910A (fr) * 1955-06-20

Also Published As

Publication number Publication date
US2956913A (en) 1960-10-18
GB878792A (en) 1961-10-04

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