CH361059A - Transistor et procédé de fabrication de celui-ci - Google Patents

Transistor et procédé de fabrication de celui-ci

Info

Publication number
CH361059A
CH361059A CH361059DA CH361059A CH 361059 A CH361059 A CH 361059A CH 361059D A CH361059D A CH 361059DA CH 361059 A CH361059 A CH 361059A
Authority
CH
Switzerland
Prior art keywords
transistor
manufacturing
same
Prior art date
Application number
Other languages
English (en)
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of CH361059A publication Critical patent/CH361059A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
CH361059D 1958-09-02 1959-08-28 Transistor et procédé de fabrication de celui-ci CH361059A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US758422A US3118094A (en) 1958-09-02 1958-09-02 Diffused junction transistor

Publications (1)

Publication Number Publication Date
CH361059A true CH361059A (fr) 1962-03-31

Family

ID=25051690

Family Applications (1)

Application Number Title Priority Date Filing Date
CH361059D CH361059A (fr) 1958-09-02 1959-08-28 Transistor et procédé de fabrication de celui-ci

Country Status (6)

Country Link
US (1) US3118094A (fr)
CH (1) CH361059A (fr)
DE (1) DE1182354B (fr)
FR (1) FR1246238A (fr)
GB (1) GB883700A (fr)
NL (2) NL121500C (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL126152C (fr) * 1962-03-15
US3254279A (en) * 1963-04-17 1966-05-31 Cohn James Composite alloy electric contact element
US3235937A (en) * 1963-05-10 1966-02-22 Gen Electric Low cost transistor
US3326730A (en) * 1965-04-13 1967-06-20 Ibm Preparing group ii-vi compound semiconductor devices
DE1230919B (de) * 1965-07-17 1966-12-22 Telefunken Patent Verfahren zur sperrschichtfreien Kontaktierung von p-leitenden Zonen eines Halbleiterkoerpers mit einem Gold-Gallium-Lot
US3473980A (en) * 1966-10-11 1969-10-21 Bell Telephone Labor Inc Significant impurity sources for solid state diffusion

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT181629B (de) * 1950-09-14 1955-04-12 Western Electric Co Einrichtung zur Signalumsetzung mit einem Körper aus halbleitendem Material und Verfahren zur Herstellung derselben
US2740076A (en) * 1951-03-02 1956-03-27 Int Standard Electric Corp Crystal triodes
BE517459A (fr) * 1952-02-07
US2765245A (en) * 1952-08-22 1956-10-02 Gen Electric Method of making p-n junction semiconductor units
US2793332A (en) * 1953-04-14 1957-05-21 Sylvania Electric Prod Semiconductor rectifying connections and methods
US2811653A (en) * 1953-05-22 1957-10-29 Rca Corp Semiconductor devices
US2795744A (en) * 1953-06-12 1957-06-11 Bell Telephone Labor Inc Semiconductor signal translating devices
US2833969A (en) * 1953-12-01 1958-05-06 Rca Corp Semi-conductor devices and methods of making same
NL98710C (fr) * 1954-02-27
US2821493A (en) * 1954-03-18 1958-01-28 Hughes Aircraft Co Fused junction transistors with regrown base regions
BE537841A (fr) * 1954-05-03 1900-01-01
US2736847A (en) * 1954-05-10 1956-02-28 Hughes Aircraft Co Fused-junction silicon diodes
US2936256A (en) * 1954-06-01 1960-05-10 Gen Electric Semiconductor devices
BE541575A (fr) * 1954-09-27
US2889499A (en) * 1954-09-27 1959-06-02 Ibm Bistable semiconductor device
BE544843A (fr) * 1955-02-25
BE547274A (fr) * 1955-06-20
GB807995A (en) * 1955-09-02 1959-01-28 Gen Electric Co Ltd Improvements in or relating to the production of semiconductor bodies
US2856320A (en) * 1955-09-08 1958-10-14 Ibm Method of making transistor with welded collector
US2916408A (en) * 1956-03-29 1959-12-08 Raytheon Co Fabrication of junction transistors
US2805370A (en) * 1956-04-26 1957-09-03 Bell Telephone Labor Inc Alloyed connections to semiconductors
US2934588A (en) * 1958-05-08 1960-04-26 Bell Telephone Labor Inc Semiconductor housing structure

Also Published As

Publication number Publication date
GB883700A (en) 1961-12-06
US3118094A (en) 1964-01-14
DE1182354B (de) 1964-11-26
FR1246238A (fr) 1960-11-18
NL242895A (fr)
NL121500C (fr)

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