NL121500C - - Google Patents

Info

Publication number
NL121500C
NL121500C NL121500DA NL121500C NL 121500 C NL121500 C NL 121500C NL 121500D A NL121500D A NL 121500DA NL 121500 C NL121500 C NL 121500C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL121500C publication Critical patent/NL121500C/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
NL121500D 1958-09-02 NL121500C (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US758422A US3118094A (en) 1958-09-02 1958-09-02 Diffused junction transistor

Publications (1)

Publication Number Publication Date
NL121500C true NL121500C (xx)

Family

ID=25051690

Family Applications (2)

Application Number Title Priority Date Filing Date
NL121500D NL121500C (xx) 1958-09-02
NL242895D NL242895A (xx) 1958-09-02

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL242895D NL242895A (xx) 1958-09-02

Country Status (6)

Country Link
US (1) US3118094A (xx)
CH (1) CH361059A (xx)
DE (1) DE1182354B (xx)
FR (1) FR1246238A (xx)
GB (1) GB883700A (xx)
NL (2) NL242895A (xx)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL126152C (xx) * 1962-03-15
US3254279A (en) * 1963-04-17 1966-05-31 Cohn James Composite alloy electric contact element
US3235937A (en) * 1963-05-10 1966-02-22 Gen Electric Low cost transistor
US3326730A (en) * 1965-04-13 1967-06-20 Ibm Preparing group ii-vi compound semiconductor devices
DE1230919B (de) * 1965-07-17 1966-12-22 Telefunken Patent Verfahren zur sperrschichtfreien Kontaktierung von p-leitenden Zonen eines Halbleiterkoerpers mit einem Gold-Gallium-Lot
US3473980A (en) * 1966-10-11 1969-10-21 Bell Telephone Labor Inc Significant impurity sources for solid state diffusion

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT181629B (de) * 1950-09-14 1955-04-12 Western Electric Co Einrichtung zur Signalumsetzung mit einem Körper aus halbleitendem Material und Verfahren zur Herstellung derselben
US2740076A (en) * 1951-03-02 1956-03-27 Int Standard Electric Corp Crystal triodes
NL91691C (xx) * 1952-02-07
US2765245A (en) * 1952-08-22 1956-10-02 Gen Electric Method of making p-n junction semiconductor units
US2793332A (en) * 1953-04-14 1957-05-21 Sylvania Electric Prod Semiconductor rectifying connections and methods
US2811653A (en) * 1953-05-22 1957-10-29 Rca Corp Semiconductor devices
US2795744A (en) * 1953-06-12 1957-06-11 Bell Telephone Labor Inc Semiconductor signal translating devices
US2833969A (en) * 1953-12-01 1958-05-06 Rca Corp Semi-conductor devices and methods of making same
NL98719C (xx) * 1954-02-27
US2821493A (en) * 1954-03-18 1958-01-28 Hughes Aircraft Co Fused junction transistors with regrown base regions
BE537841A (xx) * 1954-05-03 1900-01-01
US2736847A (en) * 1954-05-10 1956-02-28 Hughes Aircraft Co Fused-junction silicon diodes
US2936256A (en) * 1954-06-01 1960-05-10 Gen Electric Semiconductor devices
US2889499A (en) * 1954-09-27 1959-06-02 Ibm Bistable semiconductor device
BE541575A (xx) * 1954-09-27
BE544843A (xx) * 1955-02-25
BE547274A (xx) * 1955-06-20
GB807995A (en) * 1955-09-02 1959-01-28 Gen Electric Co Ltd Improvements in or relating to the production of semiconductor bodies
US2856320A (en) * 1955-09-08 1958-10-14 Ibm Method of making transistor with welded collector
US2916408A (en) * 1956-03-29 1959-12-08 Raytheon Co Fabrication of junction transistors
US2805370A (en) * 1956-04-26 1957-09-03 Bell Telephone Labor Inc Alloyed connections to semiconductors
US2934588A (en) * 1958-05-08 1960-04-26 Bell Telephone Labor Inc Semiconductor housing structure

Also Published As

Publication number Publication date
NL242895A (xx)
US3118094A (en) 1964-01-14
CH361059A (fr) 1962-03-31
DE1182354B (de) 1964-11-26
FR1246238A (fr) 1960-11-18
GB883700A (en) 1961-12-06

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