CH398248A - Verfahren zum Gewinnen reinsten Halbleitermaterials für elektrotechnische Zwecke - Google Patents

Verfahren zum Gewinnen reinsten Halbleitermaterials für elektrotechnische Zwecke

Info

Publication number
CH398248A
CH398248A CH1438661A CH1438661A CH398248A CH 398248 A CH398248 A CH 398248A CH 1438661 A CH1438661 A CH 1438661A CH 1438661 A CH1438661 A CH 1438661A CH 398248 A CH398248 A CH 398248A
Authority
CH
Switzerland
Prior art keywords
purest
obtaining
semiconductor material
electrotechnical purposes
electrotechnical
Prior art date
Application number
CH1438661A
Other languages
English (en)
Inventor
Konrad Dr Reuschel
Kersting Arno
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US665086A external-priority patent/US3011877A/en
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH398248A publication Critical patent/CH398248A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C01B32/977—Preparation from organic compounds containing silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B41/00—Obtaining germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
CH1438661A 1956-06-25 1961-12-11 Verfahren zum Gewinnen reinsten Halbleitermaterials für elektrotechnische Zwecke CH398248A (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DES49191A DE1061593B (de) 1956-06-25 1956-06-25 Vorrichtung zur Gewinnung reinsten Halbleitermaterials fuer elektrotechnische Zwecke
US665086A US3011877A (en) 1956-06-25 1957-06-11 Production of high-purity semiconductor materials for electrical purposes
DES72060A DE1141852B (de) 1956-06-25 1961-01-14 Verfahren zum Betriebe einer Vorrichtung zur Gewinnung reinsten Halbleitermaterials, insbesondere Siliziums
US90291A US3099534A (en) 1956-06-25 1961-02-20 Method for production of high-purity semiconductor materials for electrical purposes

Publications (1)

Publication Number Publication Date
CH398248A true CH398248A (de) 1965-08-31

Family

ID=32475486

Family Applications (2)

Application Number Title Priority Date Filing Date
CH354308D CH354308A (de) 1956-06-25 1957-06-21 Vorrichtung zur Gewinnung reinsten Halbleitermaterials für elektrotechnische Zwecke
CH1438661A CH398248A (de) 1956-06-25 1961-12-11 Verfahren zum Gewinnen reinsten Halbleitermaterials für elektrotechnische Zwecke

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CH354308D CH354308A (de) 1956-06-25 1957-06-21 Vorrichtung zur Gewinnung reinsten Halbleitermaterials für elektrotechnische Zwecke

Country Status (5)

Country Link
US (3) US3099534A (de)
CH (2) CH354308A (de)
DE (2) DE1061593B (de)
FR (1) FR1177821A (de)
GB (2) GB861135A (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL123477C (de) * 1958-05-16
DE1185150B (de) * 1960-02-23 1965-01-14 Siemens Ag Verfahren zur Gewinnung von reinstem Halbleitermaterial, insbesondere Silicium
DE1243147B (de) * 1960-02-25 1967-06-29 Siemens Ag Verfahren zur Gewinnung von reinstem Halbleitermaterial durch chemische Umsetzung aus einer gasfoermigen Verbindung desselben
NL275555A (de) * 1961-04-25
DE1138481C2 (de) * 1961-06-09 1963-05-22 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase
US3406044A (en) * 1965-01-04 1968-10-15 Monsanto Co Resistance heating elements and method of conditioning the heating surfaces thereof
US3416951A (en) * 1965-07-28 1968-12-17 Air Force Usa Method for the pyrolytic deposition of silicon carbide
US3463666A (en) * 1965-08-27 1969-08-26 Dow Corning Monocrystalline beta silicon carbide on sapphire
US3501356A (en) * 1966-05-12 1970-03-17 Westinghouse Electric Corp Process for the epitaxial growth of silicon carbide
US3455723A (en) * 1966-12-02 1969-07-15 Dow Corning Coating with silicon carbide by immersion reaction
BE806098A (fr) * 1973-03-28 1974-02-01 Siemens Ag Procede de fabrication de silicium ou autre matiere semi-conductrice tres pure
JPS53106626A (en) * 1977-03-02 1978-09-16 Komatsu Mfg Co Ltd Method of making high purity rod silicon and appratus therefor
JPS53108029A (en) * 1977-03-03 1978-09-20 Komatsu Mfg Co Ltd Method of making high purity silicon having uniform shape
US4315968A (en) * 1980-02-06 1982-02-16 Avco Corporation Silicon coated silicon carbide filaments and method
US4724160A (en) * 1986-07-28 1988-02-09 Dow Corning Corporation Process for the production of semiconductor materials
US5118485A (en) * 1988-03-25 1992-06-02 Hemlock Semiconductor Corporation Recovery of lower-boiling silanes in a cvd process
US6365225B1 (en) 1999-02-19 2002-04-02 G.T. Equipment Technologies, Inc. Cold wall reactor and method for chemical vapor deposition of bulk polysilicon
US6284312B1 (en) 1999-02-19 2001-09-04 Gt Equipment Technologies Inc Method and apparatus for chemical vapor deposition of polysilicon
DE102005024041A1 (de) 2005-05-25 2006-11-30 City Solar Ag Verfahren zur Herstellung von Silicium aus Halogensilanen
DE102006043929B4 (de) * 2006-09-14 2016-10-06 Spawnt Private S.À.R.L. Verfahren zur Herstellung von festen Polysilanmischungen
JP5119856B2 (ja) * 2006-11-29 2013-01-16 三菱マテリアル株式会社 トリクロロシラン製造装置
DE102007041803A1 (de) 2007-08-30 2009-03-05 Pv Silicon Forschungs Und Produktions Gmbh Verfahren zur Herstellung von polykristallinen Siliziumstäben und polykristalliner Siliziumstab
EP2039653B1 (de) * 2007-09-20 2015-12-23 Mitsubishi Materials Corporation Reaktor für polykristallines silicium und verfahren zur herstellung von polykristallinem silicium
EP2108619B1 (de) * 2008-03-21 2011-06-22 Mitsubishi Materials Corporation Polykristalliner Siliciumreaktor
US8540818B2 (en) * 2009-04-28 2013-09-24 Mitsubishi Materials Corporation Polycrystalline silicon reactor
DE102009021825B3 (de) 2009-05-18 2010-08-05 Kgt Graphit Technologie Gmbh Aufnahmekegel für Silizium-Anzuchtstäbe
DE102009035952A1 (de) 2009-08-03 2011-02-10 Graeber Engineering Consultants Gmbh Flansch für ein CVD-Reaktorgehäuse, Verwendung einer Kamera bei einem CVD-Verfahren sowie CVD-Verfahren zur Erzeugung von Siliziumstangen
TW201142069A (en) * 2010-03-19 2011-12-01 Gt Solar Inc System and method for polycrystalline silicon deposition
US8871153B2 (en) 2012-05-25 2014-10-28 Rokstar Technologies Llc Mechanically fluidized silicon deposition systems and methods

Family Cites Families (21)

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Publication number Priority date Publication date Assignee Title
DE76548C (de) * M. STRAKOSCH in Wien VI., Mariahilferstr. 37 Drahtlitze für Webstühle
US1110590A (en) * 1905-09-27 1914-09-15 Cooper Hewitt Electric Co Regulation of systems of electrical distribution.
US960440A (en) * 1908-02-10 1910-06-07 Gen Electric Compensator.
DE304857C (de) * 1913-10-16 1918-04-08
US1452857A (en) * 1919-06-26 1923-04-24 Secretary System of voltage control
US1478302A (en) * 1922-03-29 1923-12-18 Newark Tube Company Method of and apparatus for electric welding
US1641659A (en) * 1926-02-19 1927-09-06 Gen Electric Autotransformer
US1820248A (en) * 1928-05-19 1931-08-25 Hartford Empire Co Glass making furnace and method
US1827472A (en) * 1930-02-28 1931-10-13 Pittsburgh Plate Glass Co Apparatus for making glass
US2227984A (en) * 1939-07-25 1941-01-07 Gen Electric Regulator circuit
US2441603A (en) * 1943-07-28 1948-05-18 Bell Telephone Labor Inc Electrical translating materials and method of making them
US2438892A (en) * 1943-07-28 1948-04-06 Bell Telephone Labor Inc Electrical translating materials and devices and methods of making them
US2763581A (en) * 1952-11-25 1956-09-18 Raytheon Mfg Co Process of making p-n junction crystals
NL258754A (de) * 1954-05-18 1900-01-01
US2925357A (en) * 1954-11-08 1960-02-16 Union Carbide Corp Siliconized inert base materials
US2895858A (en) * 1955-06-21 1959-07-21 Hughes Aircraft Co Method of producing semiconductor crystal bodies
NL225538A (de) * 1955-11-02
US3011877A (en) * 1956-06-25 1961-12-05 Siemens Ag Production of high-purity semiconductor materials for electrical purposes
US2931709A (en) * 1956-09-17 1960-04-05 Robert S Aries Decarburizing silicon tetrachloride
US2904404A (en) * 1957-01-09 1959-09-15 Raytheon Co Preparation of silicon
NL124690C (de) * 1958-05-29

Also Published As

Publication number Publication date
US3099534A (en) 1963-07-30
US3219788A (en) 1965-11-23
GB861135A (en) 1961-02-15
FR1177821A (fr) 1959-04-29
US3200009A (en) 1965-08-10
CH354308A (de) 1961-05-15
DE1141852B (de) 1962-12-27
DE1061593B (de) 1959-07-16
GB956306A (en) 1964-04-22

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