DE10392913T5 - Verfahren zur Behandlung der Oberfläche eines Substrats - Google Patents
Verfahren zur Behandlung der Oberfläche eines Substrats Download PDFInfo
- Publication number
- DE10392913T5 DE10392913T5 DE10392913T DE10392913T DE10392913T5 DE 10392913 T5 DE10392913 T5 DE 10392913T5 DE 10392913 T DE10392913 T DE 10392913T DE 10392913 T DE10392913 T DE 10392913T DE 10392913 T5 DE10392913 T5 DE 10392913T5
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- treating
- process chamber
- film
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000000034 method Methods 0.000 title claims abstract description 146
- 239000000758 substrate Substances 0.000 title claims abstract description 145
- 230000008569 process Effects 0.000 title claims abstract description 114
- 230000005855 radiation Effects 0.000 claims abstract description 44
- 239000007789 gas Substances 0.000 claims description 72
- 238000006243 chemical reaction Methods 0.000 claims description 10
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 10
- 229910052753 mercury Inorganic materials 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000004615 ingredient Substances 0.000 claims 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 238000011282 treatment Methods 0.000 abstract description 13
- 239000010408 film Substances 0.000 description 43
- 150000002500 ions Chemical class 0.000 description 20
- 238000004381 surface treatment Methods 0.000 description 17
- 230000005291 magnetic effect Effects 0.000 description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 11
- 210000002381 plasma Anatomy 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 230000005284 excitation Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005294 ferromagnetic effect Effects 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 230000010748 Photoabsorption Effects 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000009499 grossing Methods 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- -1 argon ions Chemical class 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000001443 photoexcitation Effects 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910019222 CoCrPt Inorganic materials 0.000 description 1
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000010000 carbonizing Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000004936 stimulating effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Magnetic Heads (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Formation Of Insulating Films (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002-201148 | 2002-07-10 | ||
| JP2002201148A JP3932181B2 (ja) | 2002-07-10 | 2002-07-10 | 基板の表面処理方法および装置 |
| PCT/JP2003/008722 WO2004008510A1 (ja) | 2002-07-10 | 2003-07-09 | 基板の表面処理方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE10392913T5 true DE10392913T5 (de) | 2005-08-18 |
Family
ID=30112552
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE10392913T Ceased DE10392913T5 (de) | 2002-07-10 | 2003-07-09 | Verfahren zur Behandlung der Oberfläche eines Substrats |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7871677B2 (ja) |
| JP (1) | JP3932181B2 (ja) |
| KR (1) | KR100979192B1 (ja) |
| CN (1) | CN100355029C (ja) |
| AU (1) | AU2003248256A1 (ja) |
| DE (1) | DE10392913T5 (ja) |
| GB (1) | GB2406713B (ja) |
| WO (1) | WO2004008510A1 (ja) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4828162B2 (ja) * | 2005-05-31 | 2011-11-30 | 株式会社日立ハイテクノロジーズ | 電子顕微鏡応用装置および試料検査方法 |
| JP4876708B2 (ja) * | 2006-05-11 | 2012-02-15 | Ｔｄｋ株式会社 | トンネル磁気抵抗効果素子の製造方法、薄膜磁気ヘッドの製造方法及び磁気メモリの製造方法 |
| US7527695B2 (en) * | 2006-06-21 | 2009-05-05 | Asahi Glass Company, Limited | Apparatus and method for cleaning substrate |
| US8455060B2 (en) * | 2009-02-19 | 2013-06-04 | Tel Epion Inc. | Method for depositing hydrogenated diamond-like carbon films using a gas cluster ion beam |
| KR102194821B1 (ko) * | 2013-10-17 | 2020-12-24 | 삼성디스플레이 주식회사 | 유기물 증착 장치 및 유기물 증착 방법 |
| US9953665B1 (en) * | 2013-12-11 | 2018-04-24 | Kansai University | Systems and methods for applying electric fields during ultraviolet exposure of lubricant layers for hard disk media |
| JP6954524B2 (ja) | 2017-03-10 | 2021-10-27 | 昭和電工株式会社 | 薄膜製造方法、磁気ディスクの製造方法およびナノインプリント用モールドの製造方法 |
| IL268710B2 (en) * | 2017-03-15 | 2024-03-01 | Asml Netherlands Bv | A device for transferring gas and a lighting source to create high harmonic radiation |
| KR102021017B1 (ko) * | 2017-11-27 | 2019-09-18 | 한국에너지기술연구원 | 진공 플라즈마 반응 장치 및 이의 조립 방법 |
| KR102116867B1 (ko) | 2018-05-08 | 2020-05-29 | 주식회사 원익큐엔씨 | 임플란트 표면개질 처리장치 |
| JP6913060B2 (ja) * | 2018-07-24 | 2021-08-04 | 株式会社日立ハイテク | プラズマ処理装置及びプラズマ処理方法 |
| JP7292671B2 (ja) * | 2019-06-17 | 2023-06-19 | 株式会社レゾナック | 磁気記録媒体の製造方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59215732A (ja) * | 1983-05-24 | 1984-12-05 | Semiconductor Energy Lab Co Ltd | 窒化珪素被膜作製方法 |
| US4595601A (en) * | 1984-05-25 | 1986-06-17 | Kabushiki Kaisha Toshiba | Method of selectively forming an insulation layer |
| JPS61189631A (ja) * | 1985-02-18 | 1986-08-23 | Sanyo Electric Co Ltd | アモルフアス半導体膜の製造方法 |
| US5183511A (en) | 1986-07-23 | 1993-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Photo CVD apparatus with a glow discharge system |
| JPH02182883A (ja) * | 1989-01-10 | 1990-07-17 | Nec Corp | 紫外線励起化学気相成長装置 |
| JP3023854B2 (ja) * | 1990-10-09 | 2000-03-21 | 富士通株式会社 | シリコン半導体基板の平坦化方法 |
| JP3059647B2 (ja) * | 1994-10-13 | 2000-07-04 | 智 松本 | 半導体の処理方法 |
| JPH0967674A (ja) * | 1995-08-28 | 1997-03-11 | Sony Corp | 薄膜形成方法及び装置 |
| JP3429259B2 (ja) * | 2000-08-30 | 2003-07-22 | 宮崎沖電気株式会社 | 真空紫外光を用いたｃｖｄ半導体製造装置 |
-
2002
- 2002-07-10 JP JP2002201148A patent/JP3932181B2/ja not_active Expired - Lifetime
-
2003
- 2003-07-09 DE DE10392913T patent/DE10392913T5/de not_active Ceased
- 2003-07-09 US US10/520,633 patent/US7871677B2/en not_active Expired - Fee Related
- 2003-07-09 WO PCT/JP2003/008722 patent/WO2004008510A1/ja active Application Filing
- 2003-07-09 AU AU2003248256A patent/AU2003248256A1/en not_active Abandoned
- 2003-07-09 KR KR1020057000449A patent/KR100979192B1/ko not_active IP Right Cessation
- 2003-07-09 GB GB0500273A patent/GB2406713B/en not_active Expired - Fee Related
- 2003-07-09 CN CNB038162911A patent/CN100355029C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP3932181B2 (ja) | 2007-06-20 |
| WO2004008510A1 (ja) | 2004-01-22 |
| US7871677B2 (en) | 2011-01-18 |
| KR20060014019A (ko) | 2006-02-14 |
| JP2004047610A (ja) | 2004-02-12 |
| AU2003248256A1 (en) | 2004-02-02 |
| US20050271831A1 (en) | 2005-12-08 |
| GB2406713B (en) | 2006-04-26 |
| GB2406713A (en) | 2005-04-06 |
| CN100355029C (zh) | 2007-12-12 |
| CN1669126A (zh) | 2005-09-14 |
| KR100979192B1 (ko) | 2010-08-31 |
| GB0500273D0 (en) | 2005-02-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| R016 | Response to examination communication | ||
| R002 | Refusal decision in examination/registration proceedings | ||
| R003 | Refusal decision now final |