DE1034274B - Verfahren zur Herstellung einer Verbindung eines draht- oder bandfoermigen elektrischen Leiters mit einer Elektrode eines Halbleiterelementes - Google Patents
Verfahren zur Herstellung einer Verbindung eines draht- oder bandfoermigen elektrischen Leiters mit einer Elektrode eines HalbleiterelementesInfo
- Publication number
- DE1034274B DE1034274B DES53212A DES0053212A DE1034274B DE 1034274 B DE1034274 B DE 1034274B DE S53212 A DES53212 A DE S53212A DE S0053212 A DES0053212 A DE S0053212A DE 1034274 B DE1034274 B DE 1034274B
- Authority
- DE
- Germany
- Prior art keywords
- electrode
- semiconductor element
- wire
- tape
- electrical conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 21
- 239000004020 conductor Substances 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title description 2
- 238000003466 welding Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K11/00—Resistance welding; Severing by resistance heating
- B23K11/002—Resistance welding; Severing by resistance heating specially adapted for particular articles or work
- B23K11/0026—Welding of thin articles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01032—Germanium [Ge]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01051—Antimony [Sb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Manufacturing Of Electrical Connectors (AREA)
- Resistance Welding (AREA)
- Wire Bonding (AREA)
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DENDAT1050449D DE1050449B (en, 2012) | 1957-04-18 | ||
NL226947D NL226947A (en, 2012) | 1957-04-18 | ||
NL112688D NL112688C (en, 2012) | 1957-04-18 | ||
DES53212A DE1034274B (de) | 1957-04-18 | 1957-04-18 | Verfahren zur Herstellung einer Verbindung eines draht- oder bandfoermigen elektrischen Leiters mit einer Elektrode eines Halbleiterelementes |
CH5838758A CH363725A (de) | 1957-04-18 | 1958-04-16 | Verfahren zur Herstellung einer Verbindung zwischen einem elektrischen Anschlussleiter und der Elektrode eines Halbleiterelementes und nach diesem Verfahren hergestelltes Halbleiterelement mit Anschlussleiter |
FR1205947D FR1205947A (fr) | 1957-04-18 | 1958-04-17 | Procédé de réalisation d'une connexion entre un conducteur électrique de jonction et l'électrode d'un élément semi-conducteur et élément semi-conducteur fabriqué d'après ce procédé, avec un conducteur de jonction |
GB12377/58A GB850119A (en) | 1957-04-18 | 1958-04-18 | Improvements in or relating to a method of connecting an electrical conductor to an electrode of a semi-conductor element |
DES59480A DE1256802B (de) | 1957-04-18 | 1958-08-19 | Vorrichtung zum Durchfuehren des Verfahrens zum Herstellen einer festen Verbindung einer draht- oder bandfoermigen Zuleitungselektrode mit einer flaechenhaften Kontaktelektrode eines Halbleiterbauelements |
CH7699159A CH382295A (de) | 1957-04-18 | 1959-08-14 | Verfahren zur Herstellung einer Verbindung zwischen einem elektrischen Anschlussleiter und der Elektrode eines Halbleiterelementes |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES53212A DE1034274B (de) | 1957-04-18 | 1957-04-18 | Verfahren zur Herstellung einer Verbindung eines draht- oder bandfoermigen elektrischen Leiters mit einer Elektrode eines Halbleiterelementes |
DES0056233 | 1957-12-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1034274B true DE1034274B (de) | 1958-07-17 |
Family
ID=25995379
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DENDAT1050449D Pending DE1050449B (en, 2012) | 1957-04-18 | ||
DES53212A Pending DE1034274B (de) | 1957-04-18 | 1957-04-18 | Verfahren zur Herstellung einer Verbindung eines draht- oder bandfoermigen elektrischen Leiters mit einer Elektrode eines Halbleiterelementes |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DENDAT1050449D Pending DE1050449B (en, 2012) | 1957-04-18 |
Country Status (5)
Country | Link |
---|---|
CH (1) | CH363725A (en, 2012) |
DE (2) | DE1034274B (en, 2012) |
FR (1) | FR1205947A (en, 2012) |
GB (1) | GB850119A (en, 2012) |
NL (2) | NL226947A (en, 2012) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1180851B (de) * | 1961-02-03 | 1964-11-05 | Philips Nv | Verfahren zum Herstellen einer Halbleiteranordnung, z. B. eines Transistors oder einer Diode |
DE1190107B (de) * | 1961-09-19 | 1965-04-01 | Siemens Ag | Thermokompressionsverfahren zum Anbringen der Kontaktelektrode oder Zuleitung eines Halbleiterbauelements |
DE1240995B (de) * | 1960-11-02 | 1967-05-24 | Siemens Ag | Verfahren zum Kontaktieren einer Elektrode eines Halbleiterelementes mit einem elektrischen Anschlussleiter |
DE1256802B (de) * | 1957-04-18 | 1967-12-21 | Siemens Ag | Vorrichtung zum Durchfuehren des Verfahrens zum Herstellen einer festen Verbindung einer draht- oder bandfoermigen Zuleitungselektrode mit einer flaechenhaften Kontaktelektrode eines Halbleiterbauelements |
DE2710835A1 (de) * | 1976-03-16 | 1977-09-29 | Ibm | Vorrichtung zum anloeten oder anschweissen von anschlussdraehten an anschlusskontakten in halbleitervorrichtungen |
DE3233225A1 (de) * | 1981-09-07 | 1983-03-24 | Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa | Integrierte hybridschaltungsanordnung und verfahren zu ihrer herstellung |
DE3609654A1 (de) * | 1985-03-22 | 1986-09-25 | Copal Electronics Co., Ltd., Tokio/Tokyo | Regelwiderstand |
DE3707493A1 (de) * | 1986-03-31 | 1987-10-01 | Nippon Mektron Kk | Ptc-bauelement |
DE3707504A1 (de) * | 1986-03-31 | 1987-10-01 | Nippon Mektron Kk | Ptc-bauelement und dessen herstellung |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL270438A (en, 2012) * | 1960-11-02 | 1900-01-01 | ||
US3197608A (en) * | 1962-01-23 | 1965-07-27 | Sylvania Electric Prod | Method of manufacture of semiconductor devices |
US3132239A (en) * | 1962-04-25 | 1964-05-05 | United Aircraft Corp | Electron beam compression welding |
DE1295697B (de) * | 1962-05-23 | 1969-05-22 | Walter Brandt Gmbh | Halbleiterbauelement und Verfahren zu seiner Herstellung |
DE3426199C2 (de) * | 1984-07-17 | 1994-02-03 | Asea Brown Boveri | Überbrückungselement |
DE3426200C2 (de) * | 1984-07-17 | 1994-02-10 | Asea Brown Boveri | Überbrückungselement |
-
0
- DE DENDAT1050449D patent/DE1050449B/de active Pending
- NL NL112688D patent/NL112688C/xx active
- NL NL226947D patent/NL226947A/xx unknown
-
1957
- 1957-04-18 DE DES53212A patent/DE1034274B/de active Pending
-
1958
- 1958-04-16 CH CH5838758A patent/CH363725A/de unknown
- 1958-04-17 FR FR1205947D patent/FR1205947A/fr not_active Expired
- 1958-04-18 GB GB12377/58A patent/GB850119A/en not_active Expired
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1256802B (de) * | 1957-04-18 | 1967-12-21 | Siemens Ag | Vorrichtung zum Durchfuehren des Verfahrens zum Herstellen einer festen Verbindung einer draht- oder bandfoermigen Zuleitungselektrode mit einer flaechenhaften Kontaktelektrode eines Halbleiterbauelements |
DE1240995B (de) * | 1960-11-02 | 1967-05-24 | Siemens Ag | Verfahren zum Kontaktieren einer Elektrode eines Halbleiterelementes mit einem elektrischen Anschlussleiter |
DE1180851B (de) * | 1961-02-03 | 1964-11-05 | Philips Nv | Verfahren zum Herstellen einer Halbleiteranordnung, z. B. eines Transistors oder einer Diode |
DE1190107B (de) * | 1961-09-19 | 1965-04-01 | Siemens Ag | Thermokompressionsverfahren zum Anbringen der Kontaktelektrode oder Zuleitung eines Halbleiterbauelements |
DE2710835A1 (de) * | 1976-03-16 | 1977-09-29 | Ibm | Vorrichtung zum anloeten oder anschweissen von anschlussdraehten an anschlusskontakten in halbleitervorrichtungen |
DE3233225A1 (de) * | 1981-09-07 | 1983-03-24 | Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa | Integrierte hybridschaltungsanordnung und verfahren zu ihrer herstellung |
DE3609654A1 (de) * | 1985-03-22 | 1986-09-25 | Copal Electronics Co., Ltd., Tokio/Tokyo | Regelwiderstand |
DE3707493A1 (de) * | 1986-03-31 | 1987-10-01 | Nippon Mektron Kk | Ptc-bauelement |
DE3707504A1 (de) * | 1986-03-31 | 1987-10-01 | Nippon Mektron Kk | Ptc-bauelement und dessen herstellung |
Also Published As
Publication number | Publication date |
---|---|
FR1205947A (fr) | 1960-02-05 |
NL112688C (en, 2012) | 1900-01-01 |
CH363725A (de) | 1962-08-15 |
DE1050449B (en, 2012) | 1959-02-12 |
NL226947A (en, 2012) | 1900-01-01 |
GB850119A (en) | 1960-09-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE1034274B (de) | Verfahren zur Herstellung einer Verbindung eines draht- oder bandfoermigen elektrischen Leiters mit einer Elektrode eines Halbleiterelementes | |
DE2344948A1 (de) | Vorrichtung zum halten und befestigen elektrischer leitungen | |
DE1181823B (de) | In ein Gehaeuse eingebauter Hochleistungsgleichrichter | |
DE2647119A1 (de) | Verbessertes thermoelement und mit einem derartigen thermoelement ausgestattete vorrichtungen | |
DE1439623C3 (de) | Mehrfachtransistor | |
DE1514022A1 (de) | Verfahren zur Herstellung von Halbleiterelementen | |
DE731018C (de) | Mit Abgriffen versehene Wicklung fuer elektrischer Apparate | |
DE1439272B2 (de) | Verfahren zum gleichzeitigen herstellen einer groesseren anzahl von halbleitergleichrichteranordnungen mit einem oder mehreren halbleiterkoerpern | |
DE1465167B2 (en, 2012) | ||
DE320326C (de) | Elektrischer Leiter fuer isolierte Hochspannungskabel | |
DE958208C (de) | Schleifenstrahler insbesondere fur ultrakurze elektrische Schwingungen | |
DE889028C (de) | Elektrischer Drahtwiderstand | |
DE635992T1 (de) | Heizelement. | |
DE149332C (en, 2012) | ||
DE1796305U (de) | Halbleiteranordnung mit mindestens einer flaechigen elektrode. | |
DE2030597C3 (de) | Verfahren zum Herstellen von Halbleiter-Hochspannungsgleichrichtern | |
DE1439717C3 (de) | Verfahren zur Herstellung eines Halbleiterbauelementes | |
DE1279199C2 (de) | Verfahren zum gleichzeitigen herstellen einer groesseren anzahl von halbleitergleichrichter-anordnungen | |
DE961364C (de) | Gleichrichtergeraet, insbesondere mit Germaniumgleichrichter vom Grossflaechentyp | |
DE1040151B (de) | Handgeraet zum Verschweissen von Kunststoffolien, insbesondere zum Herstellen von Kabelbaum-Abbindungen | |
DE1061863B (de) | Anordnung zum Festlegen von aus einem Kabelstamm und dessen Abzweigbuendeln herausgefuehrten Einzelleitern | |
DE908873C (de) | Anschlussoese fuer Doppeldrahtwicklungen | |
DE569962C (de) | Fester oder regelbarer elektrischer Metallwiderstand | |
DE1079745B (de) | Halbleiteranordnung mit einem scheibenfoermigen Grundkoerper und Verfahren zu ihrer Herstellung | |
DE976378C (de) | Verfahren zum Verschliessen von Gehaeusen fuer elektrische Halbleiteranordnungen mittels Erwaermung |