GB850119A - Improvements in or relating to a method of connecting an electrical conductor to an electrode of a semi-conductor element - Google Patents
Improvements in or relating to a method of connecting an electrical conductor to an electrode of a semi-conductor elementInfo
- Publication number
- GB850119A GB850119A GB12377/58A GB1237758A GB850119A GB 850119 A GB850119 A GB 850119A GB 12377/58 A GB12377/58 A GB 12377/58A GB 1237758 A GB1237758 A GB 1237758A GB 850119 A GB850119 A GB 850119A
- Authority
- GB
- United Kingdom
- Prior art keywords
- conductor
- electrode
- welding
- electrodes
- cup
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K11/00—Resistance welding; Severing by resistance heating
- B23K11/002—Resistance welding; Severing by resistance heating specially adapted for particular articles or work
- B23K11/0026—Welding of thin articles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01032—Germanium [Ge]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01051—Antimony [Sb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
- Resistance Welding (AREA)
- Manufacturing Of Electrical Connectors (AREA)
Abstract
850,119. Welding by pressure. SIEMENSSCHUCKERTWERKE A.G. April 18, 1958 [April 18, 1957; Dec. 13, 1957], No. 12377/58. Class 83 (4). [Also in Group XXXVI] A connecting conductor is fixed to a metallic electrode of a semi-conductor device by applying a pair of welding electrodes to closely-spaced parts of the conductor where it overlies the electrode and passing a pulse of current between them to weld the conductor to the electrode. In one embodiment, Fig. 1, a silver wire 2 is welded to a gold antimony alloy electrode 1a on a PN junction silicon or germanium body 5 by passing. current between welding electrodes 3 and 4. The two ends of the wire may afterwards be twisted together. In another embodiment a cup-shaped conductor 105 (Fig. 11) is welded over an annular region to the gold antimony electrode 104 on a silicon plate. To effect the welding, current is passed between a pair of coaxial cylindrical electrodes 107, 108 pressed against the bottom of the cup. Such a cupshaped conductor may alternatively be welded to the electrode at a series of spaced points. The points may, for instance, be arranged along the sides of or at the corners of a square, on the periphery of a circle or concentric circles, or along parallel or inter sectinglines, e.g. lines radiating from a point or lines intersecting at right-angles. The various welds may be produced singly, in groups, or all together by using a suitable number of welding electrodes. For example where the points lie on a circle, Fig. 13, the cup-shaped conductor may be provided with concentric ridges 110 notched at intervals for the purpose of locating suitably-shaped welding- electrodes 111, 112. The electrodes are moved around between pairs of adjacent notches to form the welds individually. As an alternative the conductor may be provided with suitablyplaced indentations for locating the welding electrodes, or with pin-shaped projections which co-operate with recessed welding electrodes. A tape-like conductor formed with a square or circular cup-like indentation similar to conductor 105 may be welded to the electrode of a semi-conductor device by processes similar to those described above.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES53212A DE1034274B (en) | 1957-04-18 | 1957-04-18 | Method for producing a connection of a wire or tape-shaped electrical conductor with an electrode of a semiconductor element |
DES0056233 | 1957-12-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB850119A true GB850119A (en) | 1960-09-28 |
Family
ID=25995379
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB12377/58A Expired GB850119A (en) | 1957-04-18 | 1958-04-18 | Improvements in or relating to a method of connecting an electrical conductor to an electrode of a semi-conductor element |
Country Status (5)
Country | Link |
---|---|
CH (1) | CH363725A (en) |
DE (2) | DE1034274B (en) |
FR (1) | FR1205947A (en) |
GB (1) | GB850119A (en) |
NL (2) | NL112688C (en) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1256802B (en) * | 1957-04-18 | 1967-12-21 | Siemens Ag | Device for carrying out the method for producing a permanent connection between a wire-shaped or strip-shaped lead electrode with a flat contact electrode of a semiconductor component |
NL270438A (en) * | 1960-11-02 | 1900-01-01 | ||
DE1240995B (en) * | 1960-11-02 | 1967-05-24 | Siemens Ag | Method for contacting an electrode of a semiconductor element with an electrical connection conductor |
NL260810A (en) * | 1961-02-03 | |||
NL283249A (en) * | 1961-09-19 | 1900-01-01 | ||
US3197608A (en) * | 1962-01-23 | 1965-07-27 | Sylvania Electric Prod | Method of manufacture of semiconductor devices |
US3132239A (en) * | 1962-04-25 | 1964-05-05 | United Aircraft Corp | Electron beam compression welding |
DE1295697B (en) * | 1962-05-23 | 1969-05-22 | Walter Brandt Gmbh | Semiconductor component and method for its manufacture |
JPS5842262A (en) * | 1981-09-07 | 1983-03-11 | Toshiba Corp | Connection of lead wire for hybrid integrated circuit |
DE3426200C2 (en) * | 1984-07-17 | 1994-02-10 | Asea Brown Boveri | Bridging element |
DE3426199C2 (en) * | 1984-07-17 | 1994-02-03 | Asea Brown Boveri | Bridging element |
DE3609654A1 (en) * | 1985-03-22 | 1986-09-25 | Copal Electronics Co., Ltd., Tokio/Tokyo | REGULAR RESISTANCE |
JPH0690962B2 (en) * | 1986-03-31 | 1994-11-14 | 日本メクトロン株式会社 | Method for manufacturing PTC element |
JPH0690964B2 (en) * | 1986-03-31 | 1994-11-14 | 日本メクトロン株式会社 | Method for manufacturing PTC element |
-
0
- NL NL226947D patent/NL226947A/xx unknown
- DE DENDAT1050449D patent/DE1050449B/de active Pending
- NL NL112688D patent/NL112688C/xx active
-
1957
- 1957-04-18 DE DES53212A patent/DE1034274B/en active Pending
-
1958
- 1958-04-16 CH CH5838758A patent/CH363725A/en unknown
- 1958-04-17 FR FR1205947D patent/FR1205947A/en not_active Expired
- 1958-04-18 GB GB12377/58A patent/GB850119A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1050449B (en) | 1959-02-12 |
FR1205947A (en) | 1960-02-05 |
NL112688C (en) | 1900-01-01 |
NL226947A (en) | 1900-01-01 |
DE1034274B (en) | 1958-07-17 |
CH363725A (en) | 1962-08-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB850119A (en) | Improvements in or relating to a method of connecting an electrical conductor to an electrode of a semi-conductor element | |
US3171187A (en) | Method of manufacturing semiconductor devices | |
GB1112604A (en) | Method of making contact to semiconductor arrangements | |
US4236171A (en) | High power transistor having emitter pattern with symmetric lead connection pads | |
GB1197751A (en) | Process for Packaging Multilead Semiconductor Devices and Resulting Product. | |
US3274667A (en) | Method of permanently contacting an electronic semiconductor | |
GB751278A (en) | Method and apparatus for making semiconductor devices | |
US2998534A (en) | Symmetrical junction transistor device and circuit | |
GB842957A (en) | Method and device for making connections in transistors | |
GB928436A (en) | Improvements in semi-conductor devices and methods of manufacturing them | |
US3297855A (en) | Method of bonding | |
GB992588A (en) | Semi-conductor devices | |
GB1247466A (en) | Method for determining excess carrier lifetime in semiconductor devices | |
GB983106A (en) | Semiconductor device and method of manufacture | |
GB1177031A (en) | Pressure Assembled Semiconductor Device using Massive Flexibly Mounted Terminals | |
GB959520A (en) | Improvements in methods of producing semi-conductor devices | |
GB1330509A (en) | Manufacture of semiconductor devices | |
GB1230266A (en) | ||
US3186065A (en) | Semiconductor device and method of manufacture | |
GB812550A (en) | Improvements in or relating to semiconductor signal translating devices | |
GB1084598A (en) | A method of making passivated semiconductor devices | |
IE32329B1 (en) | Hermetically sealed electrical device | |
US3159770A (en) | Multiple component electrical enclosure having identifying ring plate short-circuiting one component | |
GB1199849A (en) | Improvements in and relating to Contact Bonding and Lead Attachment of an Electrical Device | |
US3192141A (en) | Simultaneous etching and monitoring of semiconductor bodies |