GB992588A - Semi-conductor devices - Google Patents

Semi-conductor devices

Info

Publication number
GB992588A
GB992588A GB39340/61A GB3934061A GB992588A GB 992588 A GB992588 A GB 992588A GB 39340/61 A GB39340/61 A GB 39340/61A GB 3934061 A GB3934061 A GB 3934061A GB 992588 A GB992588 A GB 992588A
Authority
GB
United Kingdom
Prior art keywords
plate
conductor
slots
spot
tabs
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB39340/61A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Original Assignee
Siemens Schuckertwerke AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG filed Critical Siemens Schuckertwerke AG
Publication of GB992588A publication Critical patent/GB992588A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01073—Tantalum [Ta]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)

Abstract

992,588. Semi-conductor devices. SIEMENSSCHUCKERTWERKE A.G. Nov. 2, 1961 [Nov. 2, 1960], No. 39340/61. Heading H1K. An electrode alloyed into a semi-conductor body is attached to a substantially laminar area constituting or forming part of a further conductor by multiple electrical spot resistance welding. The area is provided with a plurality of apertures or with an aperture comprising a plurality of interconnected slots. During operation thermal expansion is taken up by the slots or apertures. In a typical arrangement, Fig. 1, a device consisting of a silicon wafer 3 provided with alloyed-in electrodes 4, 5 is mounted on a threaded copper stud 1 through the intermediary of a copper plate 7 and a plate 6 of tantalum or tungsten or a molybdenum coated with copper-nickel-iron alloy. The upper alloyed electrode 4 is attached to a metal cup 11 through the intermediary of a conductor 8, shown in plan, before assembly, in Fig. 2, consisting of a radially cut plate 9 with flexible radial extensions which are bent up and clamped to cup 11 by a ring 13. The plate section is spot-welded to electrode 4 as indicated at 16. Alternatively spot welds are made only along the periphery in which case the central section may be dispensed with. The copper plate 7, soldered or welded between stud 1 and metal plate 6, is provided with a series of slots or apertures in the manner illustrated in any of Figs. 3 to 7. A similar configuration may also be used for the plate section of conductor 8. The configuration shown in Fig. 5 with arcuate slots is suitable for connection by spot welds 22a disposed on the tabs formed by the arcuate slots. In this case the spot welding tool may be arranged to press the tabs out of the plane of the plate so that thermal expansion stresses can be absorbed by a relative lateral movement between the tabs and the body of the plate. Alternatively the spot welds are formed between the tabs leaving the latter upstanding.
GB39340/61A 1960-11-02 1961-11-02 Semi-conductor devices Expired GB992588A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES71091A DE1254773B (en) 1960-11-02 1960-11-02 Connection body for semiconductor components

Publications (1)

Publication Number Publication Date
GB992588A true GB992588A (en) 1965-05-19

Family

ID=7502230

Family Applications (1)

Application Number Title Priority Date Filing Date
GB39340/61A Expired GB992588A (en) 1960-11-02 1961-11-02 Semi-conductor devices

Country Status (4)

Country Link
CH (1) CH419349A (en)
DE (1) DE1254773B (en)
GB (1) GB992588A (en)
NL (1) NL270438A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103056639A (en) * 2012-12-31 2013-04-24 中国科学院自动化研究所 Positioning method for acting pieces for radial opening device

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3546543A (en) * 1968-08-30 1970-12-08 Nat Beryllia Corp Hermetically sealed electronic package for semiconductor devices with high current carrying conductors
JPH0214777B2 (en) * 1979-07-04 1990-04-10 Uesuchinguhausu Bureiku Ando Shigunaru Co Ltd
DE19505387A1 (en) * 1995-02-17 1996-08-22 Abb Management Ag Pressure contact housing for semiconductor components
DE10335111B4 (en) * 2003-07-31 2006-12-28 Infineon Technologies Ag Assembly method for a semiconductor device
US7754533B2 (en) * 2008-08-28 2010-07-13 Infineon Technologies Ag Method of manufacturing a semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT187598B (en) * 1954-04-07 1956-11-10 Int Standard Electric Corp Crystal rectifier or crystal amplifier
NL226947A (en) * 1957-04-18 1900-01-01
FR1213484A (en) * 1958-08-04 1960-04-01 Thomson Houston Comp Francaise Non-isotropic conductive medium for intense heat flow

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103056639A (en) * 2012-12-31 2013-04-24 中国科学院自动化研究所 Positioning method for acting pieces for radial opening device
CN103056639B (en) * 2012-12-31 2015-04-22 中国科学院自动化研究所 Positioning method for acting pieces for radial opening device

Also Published As

Publication number Publication date
NL270438A (en) 1900-01-01
CH419349A (en) 1966-08-31
DE1254773B (en) 1967-11-23

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