DE1024640B - Verfahren zur Herstellung von Kristalloden - Google Patents
Verfahren zur Herstellung von KristallodenInfo
- Publication number
- DE1024640B DE1024640B DEI8930A DEI0008930A DE1024640B DE 1024640 B DE1024640 B DE 1024640B DE I8930 A DEI8930 A DE I8930A DE I0008930 A DEI0008930 A DE I0008930A DE 1024640 B DE1024640 B DE 1024640B
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- crystal
- layer
- layers
- germanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 230000008569 process Effects 0.000 title claims description 7
- 239000013078 crystal Substances 0.000 claims description 73
- 239000004065 semiconductor Substances 0.000 claims description 28
- 229910052732 germanium Inorganic materials 0.000 claims description 22
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 22
- 238000009792 diffusion process Methods 0.000 claims description 21
- 239000012535 impurity Substances 0.000 claims description 16
- 229910000679 solder Inorganic materials 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 5
- 239000000356 contaminant Substances 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000005496 tempering Methods 0.000 claims description 4
- 230000007547 defect Effects 0.000 claims description 3
- 230000002452 interceptive effect Effects 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 238000005476 soldering Methods 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 238000001816 cooling Methods 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 description 14
- 239000011248 coating agent Substances 0.000 description 12
- 239000000370 acceptor Substances 0.000 description 8
- 230000007704 transition Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 239000011253 protective coating Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 210000004072 lung Anatomy 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Light Receiving Elements (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB20395/53A GB753133A (en) | 1953-07-22 | 1953-07-22 | Improvements in or relating to electric semi-conducting devices |
GB1250/54A GB753140A (en) | 1953-07-22 | 1953-07-22 | Improvements in or relating to electric semi-conducting devices |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1024640B true DE1024640B (de) | 1958-02-20 |
Family
ID=26236590
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DEI8930A Pending DE1024640B (de) | 1953-07-22 | 1954-07-21 | Verfahren zur Herstellung von Kristalloden |
Country Status (4)
Country | Link |
---|---|
BE (1) | BE530566A (enrdf_load_stackoverflow) |
CH (1) | CH331017A (enrdf_load_stackoverflow) |
DE (1) | DE1024640B (enrdf_load_stackoverflow) |
GB (1) | GB753140A (enrdf_load_stackoverflow) |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1098614B (de) * | 1958-04-02 | 1961-02-02 | Hughes Aircraft Co | Verfahren zur Anbringung von Kontaktelektroden bei Halbleiteranordnungen |
DE1105522B (de) * | 1958-11-12 | 1961-04-27 | Licentia Gmbh | Transistor mit einem scheibenfoermigen Halbleiterkoerper |
DE1118888B (de) | 1959-04-10 | 1961-12-07 | Philips Nv | Diffusionstransistor und Verfahren zu dessen Herstellung |
DE1130932B (de) * | 1959-05-29 | 1962-06-07 | Shockley Transistor Corp | Verfahren zur Herstellung kleinflaechiger pn-UEbergaenge in Halbleiter-koerpern von einem Leitfaehigkeitstyp von Halbleiteranordnungen, z. B. Dioden oder Transistoren |
DE1131326B (de) * | 1958-04-24 | 1962-06-14 | Siemens Edison Swan Ltd | Verfahren zum Herstellen von pnpn- bzw. npnp-Halbleiteranordnungen |
DE1133039B (de) * | 1960-05-10 | 1962-07-12 | Siemens Ag | Verfahren zum Herstellen eines Halbleiterbauelementes mit einem im wesentlichen einkristallinen und mehrere Zonen abwechselnden Leitfaehigkeitstyp enthaltenden Halbleiterkoerper |
DE1148024B (de) * | 1958-06-09 | 1963-05-02 | Western Electric Co | Diffusionsverfahren zum Dotieren eines Silizium-Halbleiterkoerpers fuer Halbleiterbauelemente |
DE1153460B (de) * | 1959-01-28 | 1963-08-29 | Siemens Ag | Verfahren zum Herstellung und Kontaktieren einer Halbleiteranordnung |
DE1166379B (de) * | 1961-05-12 | 1964-03-26 | Raytheon Co | Hochfrequenztransistor und Verfahren zu seinem Herstellen |
DE1178947B (de) * | 1959-09-25 | 1964-10-01 | Intermetall | Verfahren zum Herstellen von Halbleiter-bauelementen mit mindestens einer durch Diffusion dotierten duennen Halbleiterschicht |
US3225416A (en) * | 1958-11-20 | 1965-12-28 | Int Rectifier Corp | Method of making a transistor containing a multiplicity of depressions |
DE1208409B (de) * | 1961-05-19 | 1966-01-05 | Int Standard Electric Corp | Elektrisches Halbleiterbauelement mit pn-UEbergang und Verfahren zum Herstellen |
DE1218618B (de) * | 1958-06-26 | 1966-06-08 | Philips Nv | Diffusionsverfahren zum Herstellen eines Transistors |
DE1225304B (de) * | 1961-11-16 | 1966-09-22 | Telefunken Patent | Diffusionsverfahren zum Herstellen eines Halbleiterbauelementes |
DE1237694B (de) * | 1961-08-10 | 1967-03-30 | Siemens Ag | Verfahren zum Legieren von elektrischen Halbleiterbauelementen |
DE1243278B (de) * | 1958-03-27 | 1967-06-29 | Siemens Ag | npn- bzw. pnp-Leistungstransistor aus Silizium |
DE1280421B (de) * | 1965-08-23 | 1968-10-17 | Halbleiterwerk Frankfurt Oder | Verfahren zum Verringern von Bahnwiderstaenden in Halbleiteranordnungen |
DE1281037B (de) * | 1965-09-18 | 1968-10-24 | Telefunken Patent | Verfahren zum Herstellen eines Transistors |
DE1297234B (de) * | 1965-09-08 | 1969-06-12 | Bbc Brown Boveri & Cie | Verfahren zur Herstellung des Halbleiterelementes eines stossspannungsfesten Halbleitergleichrichters |
DE1093019B (enrdf_load_stackoverflow) * | 1958-07-26 | 1974-08-08 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1207012B (de) * | 1955-12-24 | 1965-12-16 | Telefunken Patent | Halbleiterbauelement mit einer injizierenden und einer sammelnden Elektrode |
BE556337A (enrdf_load_stackoverflow) * | 1956-04-03 | |||
US2964435A (en) * | 1957-03-27 | 1960-12-13 | Mc Graw Edison Co | Semiconductor devices and their manufacture |
NL135006C (enrdf_load_stackoverflow) * | 1958-12-24 | |||
US3108914A (en) * | 1959-06-30 | 1963-10-29 | Fairchild Camera Instr Co | Transistor manufacturing process |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH289519A (de) * | 1949-04-27 | 1953-03-15 | Western Electric Co | Verfahren zur Herstellung eines Transistors und nach dem Verfahren hergestellter Transistor. |
-
0
- BE BE530566D patent/BE530566A/xx unknown
-
1953
- 1953-07-22 GB GB1250/54A patent/GB753140A/en not_active Expired
-
1954
- 1954-07-21 DE DEI8930A patent/DE1024640B/de active Pending
- 1954-07-22 CH CH331017D patent/CH331017A/de unknown
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH289519A (de) * | 1949-04-27 | 1953-03-15 | Western Electric Co | Verfahren zur Herstellung eines Transistors und nach dem Verfahren hergestellter Transistor. |
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1243278B (de) * | 1958-03-27 | 1967-06-29 | Siemens Ag | npn- bzw. pnp-Leistungstransistor aus Silizium |
DE1098614B (de) * | 1958-04-02 | 1961-02-02 | Hughes Aircraft Co | Verfahren zur Anbringung von Kontaktelektroden bei Halbleiteranordnungen |
DE1131326B (de) * | 1958-04-24 | 1962-06-14 | Siemens Edison Swan Ltd | Verfahren zum Herstellen von pnpn- bzw. npnp-Halbleiteranordnungen |
DE1148024B (de) * | 1958-06-09 | 1963-05-02 | Western Electric Co | Diffusionsverfahren zum Dotieren eines Silizium-Halbleiterkoerpers fuer Halbleiterbauelemente |
DE1218618B (de) * | 1958-06-26 | 1966-06-08 | Philips Nv | Diffusionsverfahren zum Herstellen eines Transistors |
DE1093019C2 (de) * | 1958-07-26 | 1974-08-08 | Verfahren zur herstellung von halbleiteranordnungen | |
DE1093019B (enrdf_load_stackoverflow) * | 1958-07-26 | 1974-08-08 | ||
DE1105522B (de) * | 1958-11-12 | 1961-04-27 | Licentia Gmbh | Transistor mit einem scheibenfoermigen Halbleiterkoerper |
US3225416A (en) * | 1958-11-20 | 1965-12-28 | Int Rectifier Corp | Method of making a transistor containing a multiplicity of depressions |
DE1153460B (de) * | 1959-01-28 | 1963-08-29 | Siemens Ag | Verfahren zum Herstellung und Kontaktieren einer Halbleiteranordnung |
DE1118888B (de) | 1959-04-10 | 1961-12-07 | Philips Nv | Diffusionstransistor und Verfahren zu dessen Herstellung |
DE1130932B (de) * | 1959-05-29 | 1962-06-07 | Shockley Transistor Corp | Verfahren zur Herstellung kleinflaechiger pn-UEbergaenge in Halbleiter-koerpern von einem Leitfaehigkeitstyp von Halbleiteranordnungen, z. B. Dioden oder Transistoren |
DE1178947B (de) * | 1959-09-25 | 1964-10-01 | Intermetall | Verfahren zum Herstellen von Halbleiter-bauelementen mit mindestens einer durch Diffusion dotierten duennen Halbleiterschicht |
DE1133039B (de) * | 1960-05-10 | 1962-07-12 | Siemens Ag | Verfahren zum Herstellen eines Halbleiterbauelementes mit einem im wesentlichen einkristallinen und mehrere Zonen abwechselnden Leitfaehigkeitstyp enthaltenden Halbleiterkoerper |
DE1166379B (de) * | 1961-05-12 | 1964-03-26 | Raytheon Co | Hochfrequenztransistor und Verfahren zu seinem Herstellen |
DE1208409B (de) * | 1961-05-19 | 1966-01-05 | Int Standard Electric Corp | Elektrisches Halbleiterbauelement mit pn-UEbergang und Verfahren zum Herstellen |
DE1237694B (de) * | 1961-08-10 | 1967-03-30 | Siemens Ag | Verfahren zum Legieren von elektrischen Halbleiterbauelementen |
DE1225304B (de) * | 1961-11-16 | 1966-09-22 | Telefunken Patent | Diffusionsverfahren zum Herstellen eines Halbleiterbauelementes |
DE1280421B (de) * | 1965-08-23 | 1968-10-17 | Halbleiterwerk Frankfurt Oder | Verfahren zum Verringern von Bahnwiderstaenden in Halbleiteranordnungen |
DE1297234B (de) * | 1965-09-08 | 1969-06-12 | Bbc Brown Boveri & Cie | Verfahren zur Herstellung des Halbleiterelementes eines stossspannungsfesten Halbleitergleichrichters |
DE1281037B (de) * | 1965-09-18 | 1968-10-24 | Telefunken Patent | Verfahren zum Herstellen eines Transistors |
Also Published As
Publication number | Publication date |
---|---|
CH331017A (de) | 1958-06-30 |
BE530566A (enrdf_load_stackoverflow) | |
GB753140A (en) | 1956-07-18 |
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