BE530566A - - Google Patents

Info

Publication number
BE530566A
BE530566A BE530566DA BE530566A BE 530566 A BE530566 A BE 530566A BE 530566D A BE530566D A BE 530566DA BE 530566 A BE530566 A BE 530566A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE530566A publication Critical patent/BE530566A/xx
Priority claimed from GB2039553A external-priority patent/GB753133A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
BE530566D 1953-07-22 BE530566A (xx)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB2039553A GB753133A (en) 1953-07-22 1953-07-22 Improvements in or relating to electric semi-conducting devices
GB125054A GB753140A (en) 1953-07-22 1953-07-22 Improvements in or relating to electric semi-conducting devices

Publications (1)

Publication Number Publication Date
BE530566A true BE530566A (xx)

Family

ID=26236590

Family Applications (1)

Application Number Title Priority Date Filing Date
BE530566D BE530566A (xx) 1953-07-22

Country Status (4)

Country Link
BE (1) BE530566A (xx)
CH (1) CH331017A (xx)
DE (1) DE1024640B (xx)
GB (1) GB753140A (xx)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1087704B (de) * 1956-04-03 1960-08-25 Philips Nv Verfahren zur Herstellung von Halbleiteranordnungen mit wenigstens einem p-n-UEbergang
DE1207012B (de) * 1955-12-24 1965-12-16 Telefunken Patent Halbleiterbauelement mit einer injizierenden und einer sammelnden Elektrode

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2964435A (en) * 1957-03-27 1960-12-13 Mc Graw Edison Co Semiconductor devices and their manufacture
DE1243278B (de) * 1958-03-27 1967-06-29 Siemens Ag npn- bzw. pnp-Leistungstransistor aus Silizium
US3041226A (en) * 1958-04-02 1962-06-26 Hughes Aircraft Co Method of preparing semiconductor crystals
NL238556A (xx) * 1958-04-24
NL135875C (xx) * 1958-06-09 1900-01-01
NL229074A (xx) * 1958-06-26
FR1230933A (xx) * 1958-07-26 1960-09-21
DE1105522B (de) * 1958-11-12 1961-04-27 Licentia Gmbh Transistor mit einem scheibenfoermigen Halbleiterkoerper
US3225416A (en) * 1958-11-20 1965-12-28 Int Rectifier Corp Method of making a transistor containing a multiplicity of depressions
NL135006C (xx) * 1958-12-24
NL247735A (xx) * 1959-01-28
US2937114A (en) * 1959-05-29 1960-05-17 Shockley Transistor Corp Semiconductive device and method
US3108914A (en) * 1959-06-30 1963-10-29 Fairchild Camera Instr Co Transistor manufacturing process
US3041214A (en) * 1959-09-25 1962-06-26 Clevite Corp Method of forming junction semiconductive devices having thin layers
DE1133038B (de) * 1960-05-10 1962-07-12 Siemens Ag Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper undvier Zonen abwechselnden Leitfaehigkeitstyps
DE1166379B (de) * 1961-05-12 1964-03-26 Raytheon Co Hochfrequenztransistor und Verfahren zu seinem Herstellen
DE1208409B (de) * 1961-05-19 1966-01-05 Int Standard Electric Corp Elektrisches Halbleiterbauelement mit pn-UEbergang und Verfahren zum Herstellen
DE1237694B (de) * 1961-08-10 1967-03-30 Siemens Ag Verfahren zum Legieren von elektrischen Halbleiterbauelementen
DE1225304B (de) * 1961-11-16 1966-09-22 Telefunken Patent Diffusionsverfahren zum Herstellen eines Halbleiterbauelementes
DE1280421B (de) * 1965-08-23 1968-10-17 Halbleiterwerk Frankfurt Oder Verfahren zum Verringern von Bahnwiderstaenden in Halbleiteranordnungen
CH426020A (de) * 1965-09-08 1966-12-15 Bbc Brown Boveri & Cie Verfahren zur Herstellung des Halbleiterelementes eines stossspannungsfesten Halbleiterventils, sowie ein mit Hilfe dieses Verfahrens hergestelltes Halbleiterelement
DE1281037B (de) * 1965-09-18 1968-10-24 Telefunken Patent Verfahren zum Herstellen eines Transistors

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2666814A (en) * 1949-04-27 1954-01-19 Bell Telephone Labor Inc Semiconductor translating device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1207012B (de) * 1955-12-24 1965-12-16 Telefunken Patent Halbleiterbauelement mit einer injizierenden und einer sammelnden Elektrode
DE1087704B (de) * 1956-04-03 1960-08-25 Philips Nv Verfahren zur Herstellung von Halbleiteranordnungen mit wenigstens einem p-n-UEbergang

Also Published As

Publication number Publication date
DE1024640B (de) 1958-02-20
CH331017A (de) 1958-06-30
GB753140A (en) 1956-07-18

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