GB753140A - Improvements in or relating to electric semi-conducting devices - Google Patents

Improvements in or relating to electric semi-conducting devices

Info

Publication number
GB753140A
GB753140A GB125054A GB125054A GB753140A GB 753140 A GB753140 A GB 753140A GB 125054 A GB125054 A GB 125054A GB 125054 A GB125054 A GB 125054A GB 753140 A GB753140 A GB 753140A
Authority
GB
United Kingdom
Prior art keywords
gold
semi
diffusing
relating
hours
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB125054A
Inventor
Cyril Francis Drake
Robert Anthony Hyman
Frederick Charles Geary
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE530566D priority Critical patent/BE530566A/xx
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB125054A priority patent/GB753140A/en
Priority claimed from GB2039553A external-priority patent/GB753133A/en
Priority to DE1954I0008930 priority patent/DE1024640B/en
Priority to CH331017D priority patent/CH331017A/en
Publication of GB753140A publication Critical patent/GB753140A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Light Receiving Elements (AREA)

Abstract

753,140. Semi-conductor devices. STANDARD TELEPHONES & CABLES, Ltd. Jan. 15, 1954 [July 22, 1953], No. 1250/54. Divided out of 753,133. Drawings to Specification. Class 37. The P-type region in a PN junction is provided by diffusing gold, to act as the acceptor impurity, into the semi-conductor. The description is similar to that contained in Specification 753,133 relating to the use of gold for providing a P-layer in a junction type of transistor or rectifier. In addition, the Complete Specification refers to a method of diffusing gold into germanium, suitable for manufacturing diode rectifiers and photo-electric devices as described in Specifications 753,135 and 753,136, in which gold is deposited on a thin plane slice of single crystal by vacuum evaporation heated to 850‹ C. for two hours in hydrogen, cooled slowly to 450‹ C. (the annealing temperature) and maintained at this temperature for 48 hours. Part of the upper and lower surface is then ground away, and the device plated in a fluoride Sn-Ni bath as described in Specification 753,131. After tinning, the slice is cut into small squares and the edges etched. The invention is distinguished from that described in Specification 686,907, [Group XXXIX], in which P-type material is produced by heat, used for diffusing gold into the material. Specification 700,231 also is referred to.
GB125054A 1953-07-22 1953-07-22 Improvements in or relating to electric semi-conducting devices Expired GB753140A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
BE530566D BE530566A (en) 1953-07-22
GB125054A GB753140A (en) 1953-07-22 1953-07-22 Improvements in or relating to electric semi-conducting devices
DE1954I0008930 DE1024640B (en) 1953-07-22 1954-07-21 Process for the production of crystallodes
CH331017D CH331017A (en) 1953-07-22 1954-07-22 Method for producing a PN junction in a semiconductor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB125054A GB753140A (en) 1953-07-22 1953-07-22 Improvements in or relating to electric semi-conducting devices
GB2039553A GB753133A (en) 1953-07-22 1953-07-22 Improvements in or relating to electric semi-conducting devices

Publications (1)

Publication Number Publication Date
GB753140A true GB753140A (en) 1956-07-18

Family

ID=26236590

Family Applications (1)

Application Number Title Priority Date Filing Date
GB125054A Expired GB753140A (en) 1953-07-22 1953-07-22 Improvements in or relating to electric semi-conducting devices

Country Status (4)

Country Link
BE (1) BE530566A (en)
CH (1) CH331017A (en)
DE (1) DE1024640B (en)
GB (1) GB753140A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2964435A (en) * 1957-03-27 1960-12-13 Mc Graw Edison Co Semiconductor devices and their manufacture
DE1246685B (en) * 1958-12-24 1967-08-10 Rca Corp Method for manufacturing a semiconductor device

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1207012B (en) * 1955-12-24 1965-12-16 Telefunken Patent Semiconductor component with an injecting and a collecting electrode
NL215949A (en) * 1956-04-03
DE1243278B (en) * 1958-03-27 1967-06-29 Siemens Ag npn or pnp power transistor made of silicon
US3041226A (en) * 1958-04-02 1962-06-26 Hughes Aircraft Co Method of preparing semiconductor crystals
NL238556A (en) * 1958-04-24
GB909869A (en) * 1958-06-09 1900-01-01
NL105824C (en) * 1958-06-26
BE569807A (en) * 1958-07-26
DE1105522B (en) * 1958-11-12 1961-04-27 Licentia Gmbh Transistor with a disk-shaped semiconductor body
US3225416A (en) * 1958-11-20 1965-12-28 Int Rectifier Corp Method of making a transistor containing a multiplicity of depressions
NL247735A (en) * 1959-01-28
US2937114A (en) * 1959-05-29 1960-05-17 Shockley Transistor Corp Semiconductive device and method
US3108914A (en) * 1959-06-30 1963-10-29 Fairchild Camera Instr Co Transistor manufacturing process
US3041214A (en) * 1959-09-25 1962-06-26 Clevite Corp Method of forming junction semiconductive devices having thin layers
DE1133038B (en) * 1960-05-10 1962-07-12 Siemens Ag Semiconductor component with an essentially single-crystal semiconductor body and four zones of alternating conductivity type
DE1166379B (en) * 1961-05-12 1964-03-26 Raytheon Co High frequency transistor and process for its manufacture
DE1208409B (en) * 1961-05-19 1966-01-05 Int Standard Electric Corp Electrical semiconductor component with pn junction and method for manufacturing
DE1237694B (en) * 1961-08-10 1967-03-30 Siemens Ag Process for alloying electrical semiconductor components
DE1225304B (en) * 1961-11-16 1966-09-22 Telefunken Patent Diffusion process for manufacturing a semiconductor component
DE1280421B (en) * 1965-08-23 1968-10-17 Halbleiterwerk Frankfurt Oder Method for reducing sheet resistances in semiconductor devices
CH426020A (en) * 1965-09-08 1966-12-15 Bbc Brown Boveri & Cie Method for producing the semiconductor element of a surge voltage-resistant semiconductor valve, as well as a semiconductor element produced with the aid of this method
DE1281037B (en) * 1965-09-18 1968-10-24 Telefunken Patent Method of manufacturing a transistor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2666814A (en) * 1949-04-27 1954-01-19 Bell Telephone Labor Inc Semiconductor translating device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2964435A (en) * 1957-03-27 1960-12-13 Mc Graw Edison Co Semiconductor devices and their manufacture
DE1246685B (en) * 1958-12-24 1967-08-10 Rca Corp Method for manufacturing a semiconductor device

Also Published As

Publication number Publication date
BE530566A (en)
CH331017A (en) 1958-06-30
DE1024640B (en) 1958-02-20

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