CH289519A - Verfahren zur Herstellung eines Transistors und nach dem Verfahren hergestellter Transistor. - Google Patents

Verfahren zur Herstellung eines Transistors und nach dem Verfahren hergestellter Transistor.

Info

Publication number
CH289519A
CH289519A CH289519DA CH289519A CH 289519 A CH289519 A CH 289519A CH 289519D A CH289519D A CH 289519DA CH 289519 A CH289519 A CH 289519A
Authority
CH
Switzerland
Prior art keywords
transistor
producing
produced
transistor produced
Prior art date
Application number
Other languages
English (en)
Inventor
Incorporated Western E Company
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of CH289519A publication Critical patent/CH289519A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H37/00—Thermally-actuated switches
    • H01H37/02—Details
    • H01H37/32—Thermally-sensitive members
    • H01H37/34—Means for transmitting heat thereto, e.g. capsule remote from contact member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Thermal Sciences (AREA)
  • Spark Plugs (AREA)
  • Bipolar Transistors (AREA)
CH289519D 1949-04-27 1950-03-30 Verfahren zur Herstellung eines Transistors und nach dem Verfahren hergestellter Transistor. CH289519A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US89969A US2666814A (en) 1949-04-27 1949-04-27 Semiconductor translating device

Publications (1)

Publication Number Publication Date
CH289519A true CH289519A (de) 1953-03-15

Family

ID=22220444

Family Applications (1)

Application Number Title Priority Date Filing Date
CH289519D CH289519A (de) 1949-04-27 1950-03-30 Verfahren zur Herstellung eines Transistors und nach dem Verfahren hergestellter Transistor.

Country Status (4)

Country Link
US (1) US2666814A (de)
CH (1) CH289519A (de)
FR (1) FR1019230A (de)
GB (1) GB700241A (de)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1024640B (de) * 1953-07-22 1958-02-20 Int Standard Electric Corp Verfahren zur Herstellung von Kristalloden
DE1056747B (de) * 1955-03-23 1959-05-06 Western Electric Co Verfahren zur Herstellung von mehreren p-n-UEbergaengen in Halbleiterkoerpern fuer Transistoren durch Diffusion
DE1087704B (de) * 1956-04-03 1960-08-25 Philips Nv Verfahren zur Herstellung von Halbleiteranordnungen mit wenigstens einem p-n-UEbergang
DE1092130B (de) * 1955-12-29 1960-11-03 Honeywell Regulator Co Flaechentransistor mit einem plaettchen-foermigen Halbleiterkoerper
DE1129625B (de) * 1958-05-23 1962-05-17 Telefunken Patent Drifttransistor, bei dem der spezifische Widerstand in der Basiszone von der Emitter-zur Kollektorzone zunimmt
DE1133474B (de) * 1959-01-27 1962-07-19 Siemens Ag Unipolartransistor mit zwei Steuerzonen
DE1214789B (de) * 1961-05-19 1966-04-21 Siemens Ag Verfahren zum Herstellen eines homogen dotierten Siliziumkristallkoerpers
DE1217502B (de) * 1958-03-19 1966-05-26 Rca Corp Unipolartransistor mit einer als duenne Oberflaechenschicht ausgebildeten stromfuehrenden Zone eines Leitungstyps und Verfahren zum Herstellen

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US3104365A (en) * 1949-07-08 1963-09-17 Hupp Corp Photoconductive device and methods of making same
US2792538A (en) * 1950-09-14 1957-05-14 Bell Telephone Labor Inc Semiconductor translating devices with embedded electrode
BE506110A (de) * 1950-09-29
US2765516A (en) * 1951-10-20 1956-10-09 Sylvania Electric Prod Semiconductor translators
US2842723A (en) * 1952-04-15 1958-07-08 Licentia Gmbh Controllable asymmetric electrical conductor systems
NL179061C (nl) * 1952-06-13 Dow Chemical Co Werkwijze ter bereiding van een schuimmassa uit copolymeren van een aromatisch monovinylideen-monomeer en een ethenisch onverzadigd carbonzuuranhydride, alsmede de hieruit vervaardigde schuimvormige voorwerpen.
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US2742383A (en) * 1952-08-09 1956-04-17 Hughes Aircraft Co Germanium junction-type semiconductor devices
US2778956A (en) * 1952-10-31 1957-01-22 Bell Telephone Labor Inc Semiconductor signal translating devices
NL83838C (de) * 1952-12-01 1957-01-15
US2875505A (en) * 1952-12-11 1959-03-03 Bell Telephone Labor Inc Semiconductor translating device
BE525386A (de) * 1952-12-29
US3162556A (en) * 1953-01-07 1964-12-22 Hupp Corp Introduction of disturbance points in a cadmium sulfide transistor
US2901554A (en) * 1953-01-19 1959-08-25 Gen Electric Semiconductor device and apparatus
BE526156A (de) * 1953-02-02
DE1041160B (de) * 1953-03-09 1958-10-16 Gen Electric Halbleiteranordnung mit einem langgestreckten Halbleiterkoerper und ohmschen Elektroden an den Endflaechen
US2769926A (en) * 1953-03-09 1956-11-06 Gen Electric Non-linear resistance device
US2974236A (en) * 1953-03-11 1961-03-07 Rca Corp Multi-electrode semiconductor devices
US3108210A (en) * 1953-03-11 1963-10-22 Rca Corp Multi-electrode semiconductor devices
US2836797A (en) * 1953-03-23 1958-05-27 Gen Electric Multi-electrode field controlled germanium devices
BE527382A (de) * 1953-05-01
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US2896137A (en) * 1953-06-25 1959-07-21 Sprague Electric Co Radio active electrode construction
US2792539A (en) * 1953-07-07 1957-05-14 Sprague Electric Co Transistor construction
DE1047316B (de) * 1953-08-12 1958-12-24 Gen Electric Halbleiteranordnung mit einem langgestreckten Halbleiterkoerper vom einen Leitungstyp und ohmschen Elektroden an den Enden
US2984752A (en) * 1953-08-13 1961-05-16 Rca Corp Unipolar transistors
US2813326A (en) * 1953-08-20 1957-11-19 Liebowitz Benjamin Transistors
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US2829992A (en) * 1954-02-02 1958-04-08 Hughes Aircraft Co Fused junction semiconductor devices and method of making same
US2886748A (en) * 1954-03-15 1959-05-12 Rca Corp Semiconductor devices
US2846346A (en) * 1954-03-26 1958-08-05 Philco Corp Semiconductor device
US2913597A (en) * 1954-04-20 1959-11-17 Westinghouse Electric Corp Single transistor full wave rectifier
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US2843809A (en) * 1954-05-11 1958-07-15 Corvey Engineering Company Transistors
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US2846626A (en) * 1954-07-28 1958-08-05 Raytheon Mfg Co Junction transistors and methods of forming them
US2897421A (en) * 1954-08-11 1959-07-28 Westinghouse Electric Corp Phototransistor design
US3081421A (en) * 1954-08-17 1963-03-12 Gen Motors Corp Unipolar transistor
NL199921A (de) * 1954-08-27
US2895058A (en) * 1954-09-23 1959-07-14 Rca Corp Semiconductor devices and systems
US2889499A (en) * 1954-09-27 1959-06-02 Ibm Bistable semiconductor device
US3002100A (en) * 1954-09-27 1961-09-26 Ibm Transistor circuit element
DE1035777B (de) * 1954-09-28 1958-08-07 Ibm Deutschland Verfahren zur Verbesserung des Frequenzverhaltens eines Transistors
DE1073111B (de) * 1954-12-02 1960-01-14 Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen Verfahren zur Herstellung eines Flachentransistors mit einer Oberflachenschicht erhöhter Storstellenkonzentration an den freien Stellen zwischen den Elektroden an einem einkristallmen Halbleiterkörper
US2885609A (en) * 1955-01-31 1959-05-05 Philco Corp Semiconductive device and method for the fabrication thereof
US2913676A (en) * 1955-04-18 1959-11-17 Rca Corp Semiconductor devices and systems
US2894152A (en) * 1955-05-16 1959-07-07 Ibm Crystal diode with improved recovery time
US2995665A (en) * 1955-05-20 1961-08-08 Ibm Transistors and circuits therefor
DE1035778B (de) * 1955-05-20 1958-08-07 Ibm Deutschland Transistor mit einem Halbleitergrundkoerper von einem Leitungstypus und mit drei oder mehr pn-UEbergaengen und einer oder mehreren Spitzenelektroden
US2921362A (en) * 1955-06-27 1960-01-19 Honeywell Regulator Co Process for the production of semiconductor devices
US2915647A (en) * 1955-07-13 1959-12-01 Bell Telephone Labor Inc Semiconductive switch and negative resistance
US2862115A (en) * 1955-07-13 1958-11-25 Bell Telephone Labor Inc Semiconductor circuit controlling devices
CA605440A (en) * 1955-11-03 1960-09-20 E. Pardue Turner Semiconductor devices and methods of making the same
NL212646A (de) * 1955-12-02
US3015763A (en) * 1956-03-08 1962-01-02 Hazeltine Research Inc Signal-translating device
US2877309A (en) * 1956-04-18 1959-03-10 Sylvania Electric Prod Hall effect amplifier
DE1170555B (de) * 1956-07-23 1964-05-21 Siemens Ag Verfahren zum Herstellen eines Halbleiter-bauelements mit drei Zonen abwechselnd entgegengesetzten Leitungstyps
US2913541A (en) * 1956-11-20 1959-11-17 Gen Electric Semiconductor wave filter
FR1163274A (fr) * 1956-12-12 1958-09-24 Dispositif à semi-conducteurs pour le redressement et la limitation de forts courants électriques
US2941153A (en) * 1956-12-18 1960-06-14 Gen Dynamics Corp Transistor gain control
BE552928A (de) * 1957-03-18
US2960640A (en) * 1957-05-10 1960-11-15 Siemens Ag Electric semiconductor device of the p-n junction type
US2910634A (en) * 1957-05-31 1959-10-27 Ibm Semiconductor device
US3007090A (en) * 1957-09-04 1961-10-31 Ibm Back resistance control for junction semiconductor devices
US3022472A (en) * 1958-01-22 1962-02-20 Bell Telephone Labor Inc Variable equalizer employing semiconductive element
NL241982A (de) * 1958-08-13 1900-01-01
US3148284A (en) * 1959-01-30 1964-09-08 Zenith Radio Corp Semi-conductor apparatus with field-biasing means
US3138721A (en) * 1959-05-06 1964-06-23 Texas Instruments Inc Miniature semiconductor network diode and gate
US2994811A (en) * 1959-05-04 1961-08-01 Bell Telephone Labor Inc Electrostatic field-effect transistor having insulated electrode controlling field in depletion region of reverse-biased junction
US3117260A (en) * 1959-09-11 1964-01-07 Fairchild Camera Instr Co Semiconductor circuit complexes
FR1148316A (fr) * 1959-10-20 1957-12-06 Thomson Houston Comp Francaise Procédé et appareil pour la réalisation de circuits imprimés
US3122680A (en) * 1960-02-25 1964-02-25 Burroughs Corp Miniaturized switching circuit
US3092522A (en) * 1960-04-27 1963-06-04 Motorola Inc Method and apparatus for use in the manufacture of transistors
US3230398A (en) * 1960-05-02 1966-01-18 Texas Instruments Inc Integrated structure semiconductor network forming bipolar field effect transistor
NL276412A (de) * 1961-03-30
NL130500C (de) * 1961-08-17
US3184657A (en) * 1962-01-05 1965-05-18 Fairchild Camera Instr Co Nested region transistor configuration
US3244949A (en) * 1962-03-16 1966-04-05 Fairchild Camera Instr Co Voltage regulator
NL302804A (de) * 1962-08-23 1900-01-01
US3252003A (en) * 1962-09-10 1966-05-17 Westinghouse Electric Corp Unipolar transistor
US3241013A (en) * 1962-10-25 1966-03-15 Texas Instruments Inc Integral transistor pair for use as chopper
US3254277A (en) * 1963-02-27 1966-05-31 United Aircraft Corp Integrated circuit with component defining groove
US3304470A (en) * 1963-03-14 1967-02-14 Nippon Electric Co Negative resistance semiconductor device utilizing tunnel effect
GB1050417A (de) * 1963-07-09
DE1439480B2 (de) * 1964-12-01 1976-07-08 Siemens AG, 1000 Berlin und 8000 München Transistor und verfahren zu seiner herstellung
US3388009A (en) * 1965-06-23 1968-06-11 Ion Physics Corp Method of forming a p-n junction by an ionic beam
US3383567A (en) * 1965-09-15 1968-05-14 Ion Physics Corp Solid state translating device comprising irradiation implanted conductivity ions
US3459603A (en) * 1966-01-12 1969-08-05 Us Air Force Method for preparing electroluminescent light sources
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US3496029A (en) * 1966-10-12 1970-02-17 Ion Physics Corp Process of doping semiconductor with analyzing magnet
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US3611062A (en) * 1968-04-17 1971-10-05 Ibm Passive elements for solid-state integrated circuits
US3548269A (en) * 1968-12-03 1970-12-15 Sprague Electric Co Resistive layer semiconductive device
US3629782A (en) * 1970-10-06 1971-12-21 Cogar Corp Resistor with means for decreasing current density
US3873371A (en) * 1972-11-07 1975-03-25 Hughes Aircraft Co Small geometry charge coupled device and process for fabricating same
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1024640B (de) * 1953-07-22 1958-02-20 Int Standard Electric Corp Verfahren zur Herstellung von Kristalloden
DE1056747B (de) * 1955-03-23 1959-05-06 Western Electric Co Verfahren zur Herstellung von mehreren p-n-UEbergaengen in Halbleiterkoerpern fuer Transistoren durch Diffusion
DE1056747C2 (de) * 1955-03-23 1959-10-15 Western Electric Co Verfahren zur Herstellung von mehreren p-n-UEbergaengen in Halbleiterkoerpern fuer Transistoren durch Diffusion
DE1092130B (de) * 1955-12-29 1960-11-03 Honeywell Regulator Co Flaechentransistor mit einem plaettchen-foermigen Halbleiterkoerper
DE1087704B (de) * 1956-04-03 1960-08-25 Philips Nv Verfahren zur Herstellung von Halbleiteranordnungen mit wenigstens einem p-n-UEbergang
DE1217502B (de) * 1958-03-19 1966-05-26 Rca Corp Unipolartransistor mit einer als duenne Oberflaechenschicht ausgebildeten stromfuehrenden Zone eines Leitungstyps und Verfahren zum Herstellen
DE1129625B (de) * 1958-05-23 1962-05-17 Telefunken Patent Drifttransistor, bei dem der spezifische Widerstand in der Basiszone von der Emitter-zur Kollektorzone zunimmt
DE1133474B (de) * 1959-01-27 1962-07-19 Siemens Ag Unipolartransistor mit zwei Steuerzonen
DE1214789B (de) * 1961-05-19 1966-04-21 Siemens Ag Verfahren zum Herstellen eines homogen dotierten Siliziumkristallkoerpers

Also Published As

Publication number Publication date
US2666814A (en) 1954-01-19
FR1019230A (fr) 1953-01-19
GB700241A (en) 1953-11-25

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