BE529698A - - Google Patents

Info

Publication number
BE529698A
BE529698A BE529698DA BE529698A BE 529698 A BE529698 A BE 529698A BE 529698D A BE529698D A BE 529698DA BE 529698 A BE529698 A BE 529698A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE529698A publication Critical patent/BE529698A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49082Resistor making
    • Y10T29/49101Applying terminal

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
BE529698D 1953-06-19 BE529698A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US362748A US2861229A (en) 1953-06-19 1953-06-19 Semi-conductor devices and methods of making same

Publications (1)

Publication Number Publication Date
BE529698A true BE529698A (de)

Family

ID=23427382

Family Applications (1)

Application Number Title Priority Date Filing Date
BE529698D BE529698A (de) 1953-06-19

Country Status (3)

Country Link
US (1) US2861229A (de)
BE (1) BE529698A (de)
FR (1) FR1105531A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2091988A1 (de) * 1970-03-31 1972-01-21 Mitsumi Electric Co Ltd

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3193737A (en) * 1955-05-18 1965-07-06 Ibm Bistable junction transistor
BE549320A (de) * 1955-09-02
BE567919A (de) * 1957-05-21
NL105824C (de) * 1958-06-26
US3082392A (en) * 1959-02-17 1963-03-19 Santa Barbara Res Ct Composite infrared radiation detector
NL256300A (de) * 1959-05-28 1900-01-01
NL252855A (de) * 1959-06-23
US3089794A (en) * 1959-06-30 1963-05-14 Ibm Fabrication of pn junctions by deposition followed by diffusion
US3092733A (en) * 1959-07-16 1963-06-04 Rauland Corp Four zone transistor having integral diode formed on base remote from transistor
US3054912A (en) * 1959-11-10 1962-09-18 Westinghouse Electric Corp Current controlled negative resistance semiconductor device
US3105177A (en) * 1959-11-23 1963-09-24 Bell Telephone Labor Inc Semiconductive device utilizing quantum-mechanical tunneling
US3220895A (en) * 1961-08-25 1965-11-30 Raytheon Co Fabrication of barrier material devices
US3383251A (en) * 1965-12-10 1968-05-14 Rca Corp Method for forming of semiconductor devices by masking and diffusion
US4165558A (en) * 1977-11-21 1979-08-28 Armitage William F Jr Fabrication of photovoltaic devices by solid phase epitaxy
US5341017A (en) * 1993-06-09 1994-08-23 The United States Of America As Represented By The United States Department Of Energy Semiconductor switch geometry with electric field shaping
JP3731053B2 (ja) * 2002-12-18 2006-01-05 独立行政法人 宇宙航空研究開発機構 導電性融液中の拡散係数計測方法及び導電性融液中の拡散係数計測装置
US8213751B1 (en) * 2008-11-26 2012-07-03 Optonet Inc. Electronic-integration compatible photonic integrated circuit and method for fabricating electronic-integration compatible photonic integrated circuit

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2402662A (en) * 1941-05-27 1946-06-25 Bell Telephone Labor Inc Light-sensitive electric device
US2524035A (en) * 1948-02-26 1950-10-03 Bell Telphone Lab Inc Three-electrode circuit element utilizing semiconductive materials
US2666814A (en) * 1949-04-27 1954-01-19 Bell Telephone Labor Inc Semiconductor translating device
NL82014C (de) * 1949-11-30
US2561411A (en) * 1950-03-08 1951-07-24 Bell Telephone Labor Inc Semiconductor signal translating device
US2740076A (en) * 1951-03-02 1956-03-27 Int Standard Electric Corp Crystal triodes
BE524233A (de) * 1952-11-14
NL91725C (de) * 1952-12-16

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2091988A1 (de) * 1970-03-31 1972-01-21 Mitsumi Electric Co Ltd

Also Published As

Publication number Publication date
FR1105531A (fr) 1955-12-05
US2861229A (en) 1958-11-18

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