DE10223954A1 - Plasmaangeregtes chemisches Gasphasenabscheide-Verfahren zum Abscheiden von Siliziumnitrid oder Siliziumoxinitrid, Verfahren zum Herstellen einer Schicht-Anordnung und Schicht-Anordnung - Google Patents

Plasmaangeregtes chemisches Gasphasenabscheide-Verfahren zum Abscheiden von Siliziumnitrid oder Siliziumoxinitrid, Verfahren zum Herstellen einer Schicht-Anordnung und Schicht-Anordnung

Info

Publication number
DE10223954A1
DE10223954A1 DE10223954A DE10223954A DE10223954A1 DE 10223954 A1 DE10223954 A1 DE 10223954A1 DE 10223954 A DE10223954 A DE 10223954A DE 10223954 A DE10223954 A DE 10223954A DE 10223954 A1 DE10223954 A1 DE 10223954A1
Authority
DE
Germany
Prior art keywords
flow rate
silane
layer
silicon
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE10223954A
Other languages
German (de)
English (en)
Inventor
Mirko Vogt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to DE10223954A priority Critical patent/DE10223954A1/de
Priority to US10/515,611 priority patent/US7294553B2/en
Priority to PCT/DE2003/001552 priority patent/WO2003102264A2/de
Priority to JP2004510496A priority patent/JP4825418B2/ja
Priority to EP03755893A priority patent/EP1507888B1/de
Priority to DE50313348T priority patent/DE50313348D1/de
Priority to TW092113777A priority patent/TWI312543B/zh
Publication of DE10223954A1 publication Critical patent/DE10223954A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
DE10223954A 2002-05-29 2002-05-29 Plasmaangeregtes chemisches Gasphasenabscheide-Verfahren zum Abscheiden von Siliziumnitrid oder Siliziumoxinitrid, Verfahren zum Herstellen einer Schicht-Anordnung und Schicht-Anordnung Withdrawn DE10223954A1 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DE10223954A DE10223954A1 (de) 2002-05-29 2002-05-29 Plasmaangeregtes chemisches Gasphasenabscheide-Verfahren zum Abscheiden von Siliziumnitrid oder Siliziumoxinitrid, Verfahren zum Herstellen einer Schicht-Anordnung und Schicht-Anordnung
US10/515,611 US7294553B2 (en) 2002-05-29 2003-05-14 Plasma-enhanced chemical vapour deposition process for depositing silicon nitride or silicon oxynitride, process for producing one such layer arrangement, and layer arrangement
PCT/DE2003/001552 WO2003102264A2 (de) 2002-05-29 2003-05-14 Verfahren zum abscheiden von siliziumnitrid oder siliziumoxinitrid sowie entsprechendes erzeugnis,
JP2004510496A JP4825418B2 (ja) 2002-05-29 2003-05-14 窒化シリコンまたは酸窒化シリコンを蒸着するためのプラズマ化学蒸着方法、および層構造の製造方法、並びに、層構造
EP03755893A EP1507888B1 (de) 2002-05-29 2003-05-14 Plasmaangeregtes chemisches gasphasenabscheide-verfahren zum abscheiden von siliziumnitrid oder siliziumoxinitrid in einem mim-kondensator
DE50313348T DE50313348D1 (de) 2002-05-29 2003-05-14 Plasmaangeregtes chemisches gasphasenabscheide-verfahren zum abscheiden von siliziumnitrid oder siliziumoxinitrid in einem mim-kondensator
TW092113777A TWI312543B (en) 2002-05-29 2003-05-21 Process for fabricating a mim capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10223954A DE10223954A1 (de) 2002-05-29 2002-05-29 Plasmaangeregtes chemisches Gasphasenabscheide-Verfahren zum Abscheiden von Siliziumnitrid oder Siliziumoxinitrid, Verfahren zum Herstellen einer Schicht-Anordnung und Schicht-Anordnung

Publications (1)

Publication Number Publication Date
DE10223954A1 true DE10223954A1 (de) 2003-12-11

Family

ID=29432440

Family Applications (2)

Application Number Title Priority Date Filing Date
DE10223954A Withdrawn DE10223954A1 (de) 2002-05-29 2002-05-29 Plasmaangeregtes chemisches Gasphasenabscheide-Verfahren zum Abscheiden von Siliziumnitrid oder Siliziumoxinitrid, Verfahren zum Herstellen einer Schicht-Anordnung und Schicht-Anordnung
DE50313348T Expired - Lifetime DE50313348D1 (de) 2002-05-29 2003-05-14 Plasmaangeregtes chemisches gasphasenabscheide-verfahren zum abscheiden von siliziumnitrid oder siliziumoxinitrid in einem mim-kondensator

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE50313348T Expired - Lifetime DE50313348D1 (de) 2002-05-29 2003-05-14 Plasmaangeregtes chemisches gasphasenabscheide-verfahren zum abscheiden von siliziumnitrid oder siliziumoxinitrid in einem mim-kondensator

Country Status (6)

Country Link
US (1) US7294553B2 (https=)
EP (1) EP1507888B1 (https=)
JP (1) JP4825418B2 (https=)
DE (2) DE10223954A1 (https=)
TW (1) TWI312543B (https=)
WO (1) WO2003102264A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
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WO2006014193A1 (en) * 2004-07-06 2006-02-09 Tokyo Electron Limited Processing system and method for chemically treating a tera layer

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US20050073678A1 (en) * 2003-09-26 2005-04-07 Jamil Tahir-Kheli Detection and reduction of dielectric breakdown in semiconductor devices
DE102004003337A1 (de) * 2004-01-22 2005-08-18 Infineon Technologies Ag Plasmaangeregtes chemisches Gasphasenabscheide-Verfahren, Silizium-Sauerstoff-Stickstoff-haltiges Material und Schicht-Anordnung
DE102004050391B4 (de) * 2004-10-15 2007-02-08 Infineon Technologies Ag Verfahren zum Herstellen einer Schicht-Anordnung und Schicht-Anordnung
US7268038B2 (en) * 2004-11-23 2007-09-11 Newport Fab, Llc Method for fabricating a MIM capacitor having increased capacitance density and related structure
JP5186776B2 (ja) 2007-02-22 2013-04-24 富士通株式会社 半導体装置及びその製造方法
US7606021B2 (en) * 2007-02-26 2009-10-20 United Microelectronics Corp. Metal-insulator-metal capacitor and method for fabricating the same
US20090071371A1 (en) * 2007-09-18 2009-03-19 College Of William And Mary Silicon Oxynitride Coating Compositions
US7678715B2 (en) * 2007-12-21 2010-03-16 Applied Materials, Inc. Low wet etch rate silicon nitride film
US7943527B2 (en) * 2008-05-30 2011-05-17 The Board Of Trustees Of The University Of Illinois Surface preparation for thin film growth by enhanced nucleation
KR101017763B1 (ko) * 2008-10-16 2011-02-28 주식회사 동부하이텍 Ｍｉｍ 커패시터 및 그 제조 방법
US8563095B2 (en) * 2010-03-15 2013-10-22 Applied Materials, Inc. Silicon nitride passivation layer for covering high aspect ratio features
JP5922352B2 (ja) * 2011-08-11 2016-05-24 Ｓｐｐテクノロジーズ株式会社 窒化膜の製造装置及びその製造方法、並びにその製造プログラム
CN103094076B (zh) * 2011-11-02 2015-12-16 无锡华润上华半导体有限公司 用于提高0.18μm工艺MIM电容性能的方法
CN103060778B (zh) * 2013-01-23 2015-03-11 深圳市劲拓自动化设备股份有限公司 平板式pecvd装置
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
JP2015149404A (ja) * 2014-02-06 2015-08-20 富士フイルム株式会社 シリコンオキシナイトライド膜およびその製造方法、トランジスタ
US10693062B2 (en) * 2015-12-08 2020-06-23 Crossbar, Inc. Regulating interface layer formation for two-terminal memory
GB201813467D0 (en) * 2018-08-17 2018-10-03 Spts Technologies Ltd Method of depositing silicon nitride
US11710631B2 (en) * 2020-10-23 2023-07-25 Applied Materials, Inc. Tensile nitride deposition systems and methods
WO2023017780A1 (ja) * 2021-08-11 2023-02-16 株式会社村田製作所 弾性波装置
KR102438504B1 (ko) * 2021-11-24 2022-08-31 주식회사 아이에스티이 SiCN 박막 형성 방법
CN115955913A (zh) * 2023-02-13 2023-04-11 广州粤芯半导体技术有限公司 电容结构及其制备方法、半导体结构
CN119486379A (zh) * 2023-08-04 2025-02-18 北京北方华创微电子装备有限公司 一种电流阻挡层的制备方法及led芯片

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US4618541A (en) * 1984-12-21 1986-10-21 Advanced Micro Devices, Inc. Method of forming a silicon nitride film transparent to ultraviolet radiation and resulting article
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US5164339A (en) * 1988-09-30 1992-11-17 Siemens-Bendix Automotive Electronics L.P. Fabrication of oxynitride frontside microstructures
US5466617A (en) * 1992-03-20 1995-11-14 U.S. Philips Corporation Manufacturing electronic devices comprising TFTs and MIMs
US6287951B1 (en) * 1998-12-07 2001-09-11 Motorola Inc. Process for forming a combination hardmask and antireflective layer
US6309932B1 (en) * 1999-01-14 2001-10-30 Agere Systems Guardian Corp Process for forming a plasma nitride film suitable for gate dielectric application in sub-0.25 μm technologies
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US6372668B2 (en) * 2000-01-18 2002-04-16 Advanced Micro Devices, Inc. Method of forming silicon oxynitride films
US6383874B1 (en) * 2001-03-07 2002-05-07 Advanced Micro Devices, Inc. In-situ stack for high volume production of isolation regions

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US4618541A (en) * 1984-12-21 1986-10-21 Advanced Micro Devices, Inc. Method of forming a silicon nitride film transparent to ultraviolet radiation and resulting article
US5164339A (en) * 1988-09-30 1992-11-17 Siemens-Bendix Automotive Electronics L.P. Fabrication of oxynitride frontside microstructures
EP0454100A2 (en) * 1990-04-25 1991-10-30 Casio Computer Company Limited Method of forming silicon-based thin film and method of manufacturing thin film transistor using silicon-based thin film
US5466617A (en) * 1992-03-20 1995-11-14 U.S. Philips Corporation Manufacturing electronic devices comprising TFTs and MIMs
US6324439B1 (en) * 1997-05-07 2001-11-27 Applied Materials, Inc. Method and apparatus for applying films using reduced deposition rates
US6316820B1 (en) * 1997-07-25 2001-11-13 Hughes Electronics Corporation Passivation layer and process for semiconductor devices
US6287951B1 (en) * 1998-12-07 2001-09-11 Motorola Inc. Process for forming a combination hardmask and antireflective layer
US6309932B1 (en) * 1999-01-14 2001-10-30 Agere Systems Guardian Corp Process for forming a plasma nitride film suitable for gate dielectric application in sub-0.25 μm technologies
US6372668B2 (en) * 2000-01-18 2002-04-16 Advanced Micro Devices, Inc. Method of forming silicon oxynitride films
US6383874B1 (en) * 2001-03-07 2002-05-07 Advanced Micro Devices, Inc. In-situ stack for high volume production of isolation regions

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006014193A1 (en) * 2004-07-06 2006-02-09 Tokyo Electron Limited Processing system and method for chemically treating a tera layer
US7097779B2 (en) 2004-07-06 2006-08-29 Tokyo Electron Limited Processing system and method for chemically treating a TERA layer

Also Published As

Publication number Publication date
JP2005530924A (ja) 2005-10-13
US20060084236A1 (en) 2006-04-20
DE50313348D1 (de) 2011-02-03
WO2003102264A3 (de) 2004-04-08
TW200403762A (en) 2004-03-01
JP4825418B2 (ja) 2011-11-30
WO2003102264A2 (de) 2003-12-11
US7294553B2 (en) 2007-11-13
TWI312543B (en) 2009-07-21
EP1507888A2 (de) 2005-02-23
EP1507888B1 (de) 2010-12-22

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