JP4825418B2 - 窒化シリコンまたは酸窒化シリコンを蒸着するためのプラズマ化学蒸着方法、および層構造の製造方法、並びに、層構造 - Google Patents
窒化シリコンまたは酸窒化シリコンを蒸着するためのプラズマ化学蒸着方法、および層構造の製造方法、並びに、層構造 Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 title claims description 121
- 239000010703 silicon Substances 0.000 title claims description 120
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 118
- 238000000034 method Methods 0.000 title claims description 87
- 229910052581 Si3N4 Inorganic materials 0.000 title claims description 73
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims description 73
- 238000005229 chemical vapour deposition Methods 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000000151 deposition Methods 0.000 title description 32
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 82
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 75
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 58
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 50
- 229910000077 silane Inorganic materials 0.000 claims description 50
- 239000001272 nitrous oxide Substances 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 38
- 229910021529 ammonia Inorganic materials 0.000 claims description 37
- 239000003990 capacitor Substances 0.000 claims description 33
- 230000005684 electric field Effects 0.000 claims description 30
- 238000012545 processing Methods 0.000 claims description 29
- 229910052757 nitrogen Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 17
- 239000002243 precursor Substances 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 190
- 229960001730 nitrous oxide Drugs 0.000 description 37
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 21
- 239000007789 gas Substances 0.000 description 20
- 229910052814 silicon oxide Inorganic materials 0.000 description 13
- 238000003860 storage Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 9
- 238000001157 Fourier transform infrared spectrum Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 8
- 238000004566 IR spectroscopy Methods 0.000 description 7
- 238000001039 wet etching Methods 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 4
- 229910007991 Si-N Inorganic materials 0.000 description 4
- 229910006294 Si—N Inorganic materials 0.000 description 4
- 238000010292 electrical insulation Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000003446 ligand Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- -1 Si—H Inorganic materials 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005421 electrostatic potential Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/308—Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
- H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
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Description
C=εA/d (1)
によって算出できる。
‐所定の蒸着方法(好ましくはプラズマ蒸着法)を用いた少なくとも2つのサブ工程によって、上記の層を蒸着し、
‐上記の蒸着は、上記2つのサブ工程の間に所定の持続時間中断される、
という方法を提供するものである。
‐所定の蒸着方法(好ましくはプラズマ蒸着方法)によって上記の層を蒸着し、
‐上記の層を酸素を含んだプラズマにあてることにより、層の伝導領域を、酸素を含んだプラズマとの交互作用の結果、電気的絶縁領域に変える、
という方法を提供するものである。
SiH4+NH3+N2→ SiNx+... (2)
となる。
SiH4+N2O+N2→ SiOyNz+... (3)
にしたがって行われる。
101 処理室
102 保持装置
103 シリコンウェハー
104 電極
105a 第1開口部
105b 第2開口部
105c 第3開口部
106a 第1弁
106b 第2弁
106c 第3弁
107a 第1貯蔵庫
107b 第2貯蔵庫
107c 第3貯蔵庫
108 HF電圧源
109 LF電圧源
110 ガス出力部
111 第4弁
112 ポンプ
113 プラズマ
114 窒化シリコン層
200 グラフ
201 横座標
202 縦座標
203 第1曲線
204 第2曲線
205 第3曲線
300 グラフ
301 横座標
302 縦座標
303 第1曲線
304 第2曲線
400 グラフ
401 横座標
402 縦座標
403 第1曲線
404 第2曲線
405 第3曲線
500 グラフ
501 横座標
502 縦座標
503 第1曲線
504 第2曲線
510 グラフ
511 横座標
512 第1縦座標
513 第2縦座標
514 第1曲線
515 第2曲線
516 第3曲線
517 第4曲線
520 グラフ
521 横座標
522 第1縦座標
523 第2縦座標
524 第1曲線
525 第2曲線
526 第3曲線
Claims (17)
- 基板の上に第1伝導金属層を形成し、
上記の第1伝導金属層の上に窒化シリコン層を形成し、
上記の窒化シリコン層の上に第2伝導金属層を形成する、MIMキャパシタの製造方法であって、
上記の窒化シリコン層を、
シランと、アンモニアと、窒素とを前駆体として使用し、
シランとアンモニアとの流量比を1:20から6:5までの範囲に設定し、
シランと窒素との流量比を1:40から3:5までの範囲に設定し、
処理室の圧力を、260Pa〜530Paに設定したプラズマ化学蒸着法を用いて形成することにより、
窒化シリコン層において予め決定できる化学量論の場合よりもシリコンの割合を所望に高くすることにより当該窒化シリコン層の誘電率を高くした窒化シリコン層を得ることを特徴とする方法。 - 300W〜700Wの電力を有する13.56MHzの高周波電界を印加してプラズマを発生させることを特徴とする請求項1に記載の方法。
- 300W〜700Wの電力を有する100kHzの低周波電界を基板に印加して基板の周辺領域にプラズマを蓄積させることを特徴とする請求項1または2に記載の方法。
- シランの流量を、毎分100〜600立方センチメートルに設定することを特徴とする請求項1〜3のいずれか1項に記載の方法。
- シランとアンモニアとの流量比を1:10から3:5までの範囲に設定し、
シランと窒素との流量比を1:20から3:10までの範囲に設定し、
上記の処理室の圧力を360Pa〜430Paに設定し、
13.56MHzの高周波電界の電力と基板に印加する100kHzの低周波数電界の電力とを、互いに影響を及ぼさないように、それぞれ400W〜600Wに設定することを特徴とする請求項3または4に記載の方法。 - シランとアンモニアとの流量比を3:10に設定し、
シランと窒素との流量比を3:16に設定し、
上記の処理室の圧力を350Paに設定し、
13.56MHzの高周波電界の電力と基板に印加する100kHzの低周波数電界の電力とを、それぞれ500Wに設定することを特徴とする請求項3〜5のいずれか1項に記載の方法。 - シランの流量を毎分300立方センチメートルに設定することを特徴とする請求項6に記載の方法。
- 基板の上に第1伝導金属層を形成し、
上記の第1伝導金属層の上に酸窒化シリコン層を形成し、
上記の酸窒化シリコン層の上に第2伝導金属層を形成する、MIMキャパシタの製造方法であって、
上記の酸窒化シリコン層を、
シランと、亜酸化窒素と、窒素とを前駆体として使用し、
シランと亜酸化窒素との流量比を1:2から25:4までの範囲に設定し、
シランと窒素との流量比を1:100から1:10までの範囲に設定したプラズマ化学蒸着法を用いて形成することにより、
酸窒化シリコン層において予め決定できる化学量論の場合よりもシリコンの割合を所望に高くすることにより当該酸窒化シリコン層の誘電率を高くした酸窒化シリコン層を得る方法。 - 処理室の圧力を260Pa〜530Paに設定することを特徴とする請求項8に記載の方法。
- 200W〜500Wの電力の13.56MHzの高周波電界を印加してプラズマを発生させることを特徴とする請求項8または9に記載の方法。
- 300W以下の電力の100kHzの低周波電界を基板に印加して基板の周辺領域にプラズマを蓄積させることを特徴とする請求項8〜10のいずれか1項に記載の方法。
- シランの流量を、毎分100〜500立方メートルに設定することを特徴とする請求項8〜11のいずれか1項に記載の方法。
- 請求項11または12に記載の方法であって、
シランと亜酸化窒素との流量比を1:1から25:8までの範囲に設定し、
シランと窒素との流量比を1:50から1:20までの範囲に設定し、
処理室の圧力を350Pa〜430Paに設定し、
13.56MHzの高周波電界の電力を300W〜400Wに設定するとともに、基板に印加する100kHzの低周波電界の電力を150W以下に設定することを特徴とする方法。 - 請求項11〜13のいずれか1項に記載の方法であって、
シランと亜酸化窒素との流量比を13:12に設定し、
シランと窒素との流量比を13:800に設定し、
処理室の圧力を350Paに設定し、
13.56MHzの高周波電界の電力を300Wに設定することを特徴とする方法。 - シランの流量を、毎分130立方センチメートルに設定することを特徴とする請求項14に記載の方法。
- 上記の基板として、半導体基板を使用することを特徴とする請求項1〜15のいずれか1項に記載の方法。
- 上記の基板として、シリコン基板を使用することを特徴とする請求項1〜16のいずれか1項に記載の方法。
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DE10223954A DE10223954A1 (de) | 2002-05-29 | 2002-05-29 | Plasmaangeregtes chemisches Gasphasenabscheide-Verfahren zum Abscheiden von Siliziumnitrid oder Siliziumoxinitrid, Verfahren zum Herstellen einer Schicht-Anordnung und Schicht-Anordnung |
PCT/DE2003/001552 WO2003102264A2 (de) | 2002-05-29 | 2003-05-14 | Verfahren zum abscheiden von siliziumnitrid oder siliziumoxinitrid sowie entsprechendes erzeugnis, |
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DE102004050391B4 (de) | 2004-10-15 | 2007-02-08 | Infineon Technologies Ag | Verfahren zum Herstellen einer Schicht-Anordnung und Schicht-Anordnung |
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TW200403762A (en) | 2004-03-01 |
DE50313348D1 (de) | 2011-02-03 |
EP1507888A2 (de) | 2005-02-23 |
WO2003102264A2 (de) | 2003-12-11 |
EP1507888B1 (de) | 2010-12-22 |
US7294553B2 (en) | 2007-11-13 |
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