TW478158B - Silicon oxide film forming method and manufacturing method of thin-film transistor - Google Patents

Abstract

The present invention provides a silicon oxide film forming method for the use of both gate insulating film and interlayer insulating film, which provides good insulation, voltage resistance and step coverage to increase the yield rate of TFT, make the handing process easy and reduce the cost. The present invention comprises a high frequency electrode 3, a base electrode 6, match boxes 9 and 17 for integrating each electrode and impedance between electrodes. Dual frequency plasma CVD device 1 is adopted, wherein a certain electrode 20a (a fine-tuning capacitor 20 to form the match box 9 at the high frequency electrode terminal) is a high frequency electrode 3. The base electrode 6 carries the substrate to be processed. A high frequency power is applied to the high frequency electrode 3 and base electrode 6, respectively, at the same time, and SiH4 and N2O are mixed and used as the main reaction gas to generate plasma and further form silicon oxide film on the processed substrate 5.

Description

478158 A7 B7 is printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the Invention (Field of Invention) The present invention relates to a method for forming a silicon oxide film and a method for manufacturing a thin film transistor, and is applicable to thin film transistors (Thin The film insulation film (hereinafter referred to as tft) of the gate insulation film and the interlayer insulation film is an excellent method for forming a dream oxide film. [Conventional Technology] The liquid crystal display is a light, thin, and short display device widely used by the general public. Twisted Nematic (TN) mode active matrix liquid crystal display is a high-quality display device with low driving voltage, low power consumption, and high contrast. In an active matrix type liquid crystal display, one of a group of substrates surrounding a liquid crystal layer is an active matrix substrate having a driving pixel conversion element. The thirteenth figure is a conversion element TFT of an active matrix substrate, which belongs to a TFT having a top gate structure. As shown in the thirteenth figure, the TFT 50 has an island-shaped semiconductor active film 52 on a transparent substrate 51, and an interlayer insulating film 53 covers the semiconductor active film 52 on the transparent substrate 51. There are contact holes 54 and 55 on the interlayer insulation film 53. Through the contact holes 54 and 55, please read the remarks-matters and then bind the page. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297). Gongchu) 478158 thousand "months

V. Explanation of the invention (1) — —τ, 丨 丨 丨 丨 .— Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, there are a source (so bribe) 56 and a pole (_) 57 connected to the semiconductor active film 52. The interlayer insulating film 53 has a film 58 covering the source electrode 56 and the non-electrode 57. There are contact holes on the passivation. The pixel electrodes 60 are connected through the contact holes 59 and 57. The channel (Uhannd) generating portion 63 between the source region 61, the non-polar region & the source region 61 and the drain region 62 on the semiconductor active film 52. The source region 61 and the source 56 are connected, and the non-electrode region Q and the non-electrode 57 are connected. In the channel generating portion 63 of the semiconductor active film 52, a gate insulating film 64 is provided, and a gate electrode is provided on the gate insulating film 64. In the structure of the TFT50 in the thirteenth figure, in general, the semiconductor active film 52 is made of an amorphous material. Shi Xi (a_Si) or polycrystalline # (poly-Si). The source electrode 56, the non-electrode 57 and the interrogation electrode & are made of a conductive metal material. The pixel electrode 60 is made of a transparent conductive film such as indium tin oxide (hereinafter referred to as IT0). Insulating films such as the gate insulating film 64 and the interlayer insulating film 53 are composed of a silicon oxide film (Si02 film). Ding 50 controls the electric current flowing between the source / inverter by turning on or off the electric charge induced by the channel generating portion 63 according to the electric field effect when the voltage is applied to the gate electrode 65. This paper size applies to the standard (CNS) A4 specifications (210X 297 ^ · centimeters (please read the precautions on the back before loading), -ιτ -line 478158 A7 B7 amended to supplement the printing of the employee's consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Explanation of the invention () [Problems to be solved] As mentioned above, the TFT needs an insulating film such as a gate insulating film and an interlayer insulating film. In short, although the gate insulating film and the interlayer insulating film are both the same, The performance is different. The gate insulation film is the most important factor affecting the electrical characteristics of the TFT (such as the threshold voltage). Even if a thin insulation film is used as the material of the gate insulation film, it still needs to meet the stable characteristics and good insulation withstand voltage. In contrast, the interlayer insulation film is located between different two-layer conductive layers, and its function is to maintain the insulation effect between these conductive films. As can be seen from the thirteenth figure, the interlayer insulation film is along the gateway. The layer distance of the electrode or semiconductor active film is formed. Therefore, the step coverage of the interlayer insulating film is poor, and the insulation financial pressure of the layer distance is low. Therefore, the interlayer insulating film must meet the good step coverage. Good, layer-to-layer insulation and high voltage resistance requirements. Silicon oxide films that are often used as insulating film materials are made by plasma chemical vapor deposition (hereinafter referred to as CVD), and the raw material gas is Tetra Ethyl Ortho Silicate is used. Due to the good step coverage of the tetraethyl oxysilicate film, it is quite suitable for interlayer insulation films, but the disadvantages are the slow film formation speed and Insulation resistance (please read the precautions on the back first, then this page)-The paper size of this paper is applicable to China National Standard (CNS) A4 specification (210X297 mm) 478158 A7 B7 Vice-It Cooperative printed 5. Description of the invention () Low pressure, not suitable for the gate insulation film. Tetraethyloxysilicate is liquid at normal temperature, and is used for CVD after gasification, which is quite difficult to handle and costly. A plasma CVD method using a mixture of silicon sulfoxide (SiH4) and nitrous oxide (N20) as raw materials is also widely known. However, the step coverage of the stone oxide film formed by this plasma CVD method difference, In some cases, the film at the layer distance may be cracked, which is suitable for the gate insulation film, but not suitable for the interlayer insulation film. The insulating film constituting the TFT may be used for the purpose of the gate insulation film and the interlayer insulation film. There are different performance requirements. Different applications require different raw materials for the insulation film. Because different raw materials are used for different processes, the flexibility of the processing procedure is relatively reduced, and the productivity is reduced. Therefore, regardless of the gate insulation film and the interlayer insulation film, For any application, a silicon oxide film formed by a plasma CVD method (same raw material gas) can be used to provide a silicon oxide film that can make the process more reasonable. The purpose of the present invention is to solve the above problems and provide an absolute (please read the precautions on the back before HR this page). ···· 11-line This paper is also applicable to China National Standard (CNS) A4 specification (210X297 mm)

Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Hydropower of the People's Republic of China. 5. Description of the invention Γ) Excellent pressure and step coverage, can improve the TFT yield, simple in this way, low cost, and gateway insulation film and interlayer insulation Film formation method for silicon oxide film. [Means for solving problems] In order to achieve the above-mentioned purpose, 70 pieces of the film forming method of the special oxygen tilt of the present day include the first high-frequency power source, high-frequency electrode, high-frequency electrode matcher, second high-frequency power source, and Susceptor electrode, susceptor terminal matching device. The high-frequency electrode is connected to the high-frequency power source. The high-frequency electrode terminal matcher is provided with an integrated circuit that can integrate the impedance between the i-th high-frequency power source and the cheek electrode. The base electrode and high-frequency power are in a relative position and are connected to a second high-frequency power source to support the substrate. The base electrode terminal matcher is provided with an integrated circuit, which can adjust the impedance between the second frequency source and the base electrode. The method for forming the silicon oxide film uses a dual-frequency excitation type plasma CVD device. In the integrated circuit of the high-frequency electrode terminal matcher, at least one of two types of fine-tuned electrodes is formed. One of the electrodes is a high-frequency electrode. A substrate to be processed is placed on the base electrode, and high-frequency power is applied to the high-frequency electrode and the base electrode, respectively, to generate a reaction gas (a mixed gas flow rate of 10% to 50% with silicon methane and nitrous oxide). This paper ^^ Suitable fortune $? 7 ^ 774 ^ (210X ^ 97mm please read) Read Back-Teach:% ♦ # Binding line 478158 A7 B7

Supplement V. Description of the invention () Plasma, and then a silicon oxide film is formed on the substrate to be processed. A conventional general plasma CVD apparatus is provided with a pedestal on which a substrate to be processed is placed in a chamber, and electrodes are arranged at opposite positions, and high-frequency power is applied to the electrodes, and a reactive gas is introduced to generate a plasma. . In contrast to this structure, in addition to the original electrodes, the base on which the substrate to be processed is placed is also electrodeized, so that a bias voltage can be applied to the substrate to be processed. That is, the present invention is a dual-frequency excitation type plasma CVD device. In addition, the two matches installed between the "first frequency source and the south frequency electrode" and the second frequency between the south frequency power source and the base electrode are medium. If one electrode and the high frequency electrode of the trimmer capacitor are used at the same time, (Located on the integrated circuit of the high-frequency electrode terminal matcher), the power consumption will be reduced, the energy efficiency will be improved, the film formation speed will be faster, and the quality will be better. (Please read the precautions on the back first, and then this page)-Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs of 1T Printed the present invention using a dual-frequency excitation type plasma CVD device equipped with a matching device, and Nitrous oxide is the main reaction gas, and the silicon oxide film is formed while changing the gas flow rate and other film forming conditions. For a dual-frequency excitation plasma CVD device, the flow rate of the mixed gas of Shi Xiejia and Nitrous Oxide is more than this paper standard applicable to China National Standard (CNS) A4 (2ΐχ2 29 mm) 478158 A7 B7, Amendment Supplement V. Description of the invention () between 10% and 50%, compared with the tetraethyloxysilicate silicon oxide film, even the N20 / SiH4 silicon oxide film with poor step coverage, The quality of the formed silicon oxide film is also as good as that of the tetraethyloxysilicate silicon oxide film. In the reaction gas, the flow rate ratio of silicon methane and nitrous oxide is preferably set to 10 or more. Based on the results of multiple experiments on the flow ratio of Shixi Jiajiao and nitrous oxide, if the flow ratio is set to more than 10, the chemical flow logically cut the oxide film structure (stoichiometric structure) can be determined by measuring the Zhejiang coefficient. The formed silicon oxide film is formed very quickly. Therefore, step coverage can be improved. Furthermore, if the flow ratio is set to 10 or more, the insulation withstand voltage can be improved. The actual results will be explained in detail below. Use 10% to 50% of silane and nitrous oxide as the main reaction gas. The other added gases are helium, hydrogen, krypton, oxygen, argon, and nitrogen. These gases assist the reaction of the main reaction gas. For example, helium, xenon, or hydrogen has a large ionization energy, which has the effect of accelerating the reaction and improving the stability of the plasma. The role of oxygen is to supplement the amount of oxygen ions in the film formation. The role of argon and nitrogen is to accelerate the kinetic energy of ions generated by the main reaction gas (please read the note on the back ^-Matters ^^^^ this page) -Installation-Printed by paper Applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 478158 A7 B7, amended and supplemented the fifth, the description of the invention (), and speed up the reaction. In the dual-frequency excitation type plasma CVD apparatus, the frequency of the high-frequency power applied to the high-frequency electrode is preferably in the range of 13.56 MHz to 100 MHz. If the frequency of the high-frequency power applied to the high-frequency electrode is less than 13.56MHz, the potential difference between the high-frequency electrode and the plasma will increase, and the high-frequency electrode will be easily damaged so that it cannot function. On the other hand, the frequency of the high-frequency electric power applied to the base electrode is preferably in the range of 50 kHz to 1.6 MΗζ. If the south-frequency power frequency applied to the base electrode is less than 50 kHz, it is the same as the south-frequency electrode. The base electrode is easily damaged. If it exceeds 1.6MHz, it is not easy to generate a discharge with the high-frequency electrode, resulting in a decrease in energy use efficiency and failure to function. The invention uses a dual-frequency excitation type plasma CVD device, which has a high film formation speed and excellent quality of the formed silicon oxide film. The high-frequency electrode terminal matcher of the dual-frequency excitation type plasma CVD device has a non-parallel shape in the side wall of the casing and the power supply line. The side wall of the housing is composed of a conductor with a power supply line and an integrated circuit. The power supply line sends high-frequency power from the first high-frequency power supply to a high-frequency electrode through an integrated circuit. This paper size applies to China National Standard (CNS) A4 (210X2 mm) (please read the precautions on the back before binding). Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs. Printed by FFC 478158 A7 B7

Amendment I Supplement I Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () The high-frequency current flow when the dual-frequency excitation plasma CVD device is powered is generally by high-frequency power, coaxial cables, integrated circuits, power lines , High-frequency electrodes, plasma space, base electrodes, side walls of the reaction chamber, and side walls of the housing of the matcher. If the side wall of the housing and the power supply line are non-parallel, the direction of the outbound current and the return current will also be non-parallel, which can prevent the current from interfering with each other. Therefore, the energy use efficiency can be further improved, the film formation speed can be accelerated, and the film formation quality can be improved. The thin-film transistor manufacturing method of the present invention is characterized in that the silicon oxide film formed by the film-forming method of the silicon oxide film is used for a gate insulating film and an interlayer insulating film of a thin-film transistor. The method of forming a silicon oxide film can improve the energy use efficiency of a plasma CVD device, accelerate the film formation speed, and apply substrate bias power. Generally, the film formation speed on a small substrate is accelerated, so the step coverage is good. Therefore, like the tetraethyloxysilicate silicon oxide film, the N2O / SiH4 silicon oxide film that is not suitable for the interlayer insulating film can be applied to the interlayer insulating film, and the film quality and insulation withstand voltage can be improved. Therefore, it is also applicable to the gate insulation film. The yield of thin film transistors is relatively improved. [Application type] The first to fifth figures will be used to explain the application type of the present invention (please read the precautions on the back first ^ ||: this page)-binding and binding This paper size applies the Chinese national standard (CNS ) A4 size (210X29? Mm)

Fifth, the invention description (state.

Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The first figure is a structural diagram of a plasma CVD device 1 using the silicon oxide film formation method of the present invention. This dual-frequency excitation type plasma device 1 has a pedestal electrode supporting a substrate to be processed in addition to a high-frequency electrode disposed at the top of the reaction chamber, and can apply high-frequency power to the local-frequency electrode and the pedestal electrode. As shown in the first figure, the top of the reaction chamber 2 is provided with a high-frequency electrode 3 and a spray plate 4. The bottom end of the reaction chamber 2 is provided with a base electrode 6 (facing the spray plate 4 with To-be-processed substrate 5). The high-frequency electrode 3 is connected to the first high-frequency power source 10 through a high-frequency electrode terminal matcher 9 (an integrated circuit is provided inside the conductor housing 7). The high-frequency electrode 3 and the spray plate 4 form a space 11 in which a gas pipe 12 for introducing a reaction gas is arranged. The reaction gas introduced into the space 11 through the air duct 12 is sent from the spray plate 4 to the inside of the reaction chamber 2. Reference numeral 13 represents an insulator that insulates the wall portion of the reaction chamber 2 and the high-frequency electrode 3. There is a base shield 14 around the base electrode 6, and the base electrode 6 and the base electrode 14 can be moved up and down through a bellow 15. This architecture allows the distance between the south frequency electrode 3 and the base electrode 6 to be read.

Item m I Page I Alignment This paper size applies the Chinese National Standard (CNS) Α4 specification (210 × 297 mm) 11: 1 478158 Α7 Β7 ) Is adjusted. The base electrode 6 is connected to a second high-frequency power source 18 through a base electrode terminal matching device 17 (with an integrated circuit 16 inside). An integrated circuit 8 is provided inside the housing 7 of the high-frequency electrode terminal matcher 9, and the integrated circuit 8 can integrate the impedance between the first high-frequency power source 10 and the high-frequency electrode 3. The high-frequency electrode terminal matcher 9 is unique to this creation. The specific structure of the integrated circuit 8 is a coil 19 and a trimming capacitor 20 connected in series with the first high-frequency power source 10, connected in parallel with a load capacitor 21, and grounded at one end. Of the two sets of electrodes 20a and 20b constituting the trimmer capacitor 20, the electrode 20a becomes the high-frequency electrode 3. In the integrated circuit 8, the capacitance of the trimmer capacitor 20 can be adjusted to adjust the impedance between the first high-frequency power source 10 and the high-frequency electrode 3 together. The specific structure of the trimming capacitor 20 is shown in the second and third figures. The trimmer capacitor 20 is a so-called butterfly capacitor. The rotating plate 23 supports the insulating plate 22 of the high-frequency electrode 3 (the electrode 20 of the trimmer capacitor is also used), and the electrode 20b is fixed by the rotating shaft 23, and the insulating plate 22 is enclosed between the high-frequency electrode 3 and the electrode 20b. Use the grooves 22a on the insulating plate 22 and the gear 24 to rotate the insulating plate 22 so that the electrodes 20b and the insulating plate 22 overlap. This paper is in Chinese National Standard (CNS) A4 size (210X291? 1 mm) (please first Read the precautions on the back and then re-up this page) • Binding and binding 12 478158 A7 BJuly / 丨 Amended and supplemented Printed by the Intellectual Property Bureau Employee Consumer Cooperatives of the Ministry of Economy The capacity between 20a and electrode 20b. On the other hand, as shown in the first figure, the base electrode terminal matcher 17 is provided with an integrated circuit 16 to integrate the impedance between the second high-frequency power source 18 and the base electrode 6. The base electrode terminal matching device Π is not a patent of the present invention, and a general plasma CVD apparatus has such a device. The specific structure of the integrated circuit 16 is that one of the electrode terminals of the trimming capacitors 26 and 27 and the capacitor 25 are connected in series, and the load capacitors 28 and 29 are connected to the other electrode terminal of the capacitor 25 and one end is grounded. When the silicon oxide film is formed by the plasma CVD apparatus 1, the substrate 5 is placed on the base electrode 6, and the high-frequency electrode 3 and the substrate sent from the first high-frequency power source 10 and the second high-frequency power source 18 The seat electrode 6 applies high-frequency power, and simultaneously sends the reaction gas from the air guide tube 12 to the reaction chamber 2 through the spray plate 4 to generate a plasma, thereby forming a silicon oxide film on the substrate 5 to be processed. Silane and nitrous oxide are used as the main reaction gas, and other added gases are used at the same time. The flow rate of the main reaction gas is between 10% and 50%. The added gas may be any one of helium, hydrogen, gas, oxygen, argon, and nitrogen, or a mixed gas. (Please read the precautions on the back before you install the HP 100-in-line cable. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X29 <} 4%). 478158 A7 B7 Correction Supplement 13 Ministry of Economic Affairs Intellectual Property Printed by the Bureau ’s Consumer Cooperatives. 5. Description of the invention () The flow rate ratio of silica gel and nitrous oxide in the main reaction gas is preferably set to more than 10, such as 40 sccm stone yak burn and 400 sccm oxidized gas. As a result, the formed oxide film has a solid structure and a fast film formation rate. Example of film formation conditions: temperature: 300 ° C, pressure: 200Pa, flow rate ratio of silicon dioxide and nitrous oxide: 10, silicon in the reaction gas Flow rate ratio of mixed gas of methane and nitrous oxide: 35% (diluted with helium), high-frequency power frequency applied to the high-frequency electrode: 13.56MΗζ to 100MHz, substrate bias power frequency applied to the base electrode: 50kHz Up to 1.6MΗζ, the high-frequency power applied to the high-frequency electrode plus the high-frequency power frequency applied to the base electrode is higher than the high-frequency power applied to the base electrode (hereinafter, this specification refers to this as the substrate Bias voltage Ratio) 40%. Next, the method of manufacturing an upper gate TFT using a silicon oxide film for a gate insulating film and an interlayer insulating film will be described with reference to the fourth figure. As shown in the fourth figure (A), it is transparent in glass and the like. A semiconductor active film 31 (formed of a silicon oxide film with a thickness of about 500 A) is formed on the substrate, and then a half (please read the precautions on the back first and then this page) using a photolithography process.

、 1T line This paper size is applicable to China National Standard (CNS) A4 specification (210X 297 this centimeter) 14 478158

Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the conductive active film 31 hit an island. Then, a silicon oxide film with a thickness of about 300A is fully formed. At this time, a dual-frequency excitation type plasma CVD apparatus was used to form the film with silicon methane and nitrous oxide as the main reaction gases. After the aluminum metal film of about 1,000 people is formed, the metal film and the silicon oxide film are impacted into an island shape by a photolithography process to form a gate electrode 32 and a gate insulating film 33. As shown in the fourth figure (B), impurities such as phosphorus and arsenic are ion-implanted from above the gate electrode 32, and the areas other than below the gate electrode 32 in the semiconductor active film 31 are regarded as n-type stone layers, respectively. A source region 34 and a drain region 35 are formed. Between the source region 34 and the drain region 35 is a channel generating portion 36. Next, an interlayer insulating film 37 (formed from a silicon oxide film having a thickness of about 2000 A) is formed over the entire surface. At this time, a dual-frequency excitation type plasma CVD apparatus 1 is used, and a film is formed using silicon methane and nitrous oxide as the main reaction gases. Next, the interlayer insulating film 37 is impacted by a photolithography process, and contact holes 38 and 39 are formed in the source region 34 and the drain region 35 of the semiconductor active film 31, respectively. Then, an aluminum metal film having a thickness of about 1000 A is formed on the entire surface and collided to form a source electrode 40 and a drain electrode 41. As shown in the fourth figure (C), the passivation film 42 is fully formed (by (please read the precautions on the back first ^^! ^. This page})

1 —1 919 HI This paper is applicable to the Chinese Home Standard (CNS) A4 specification (21〇χ29ϋ 478158 A7 B7 V. Description of the invention () (Please read the precautions on the back page first) Silicon oxide film is formed. The lithography process hits the passivation film 42 to form a contact hole 43 in the drain electrode 41. Then, a transparent conductive film such as ITO is formed on the entire surface, and then bumped to form a pixel electrode 44. After the above process is performed, the TFT 45 connected to the pixel electrode 44 can be completed. The method for forming the silicon oxide film of the present invention uses a dual-frequency excitation type plasma CVD device, while using the trimmer capacitor 20 in the high-frequency electrode terminal matcher 9 The loss of high-frequency power of a certain electrode 20a and high-frequency electrode 3 is significantly lower than in the past, which can improve energy efficiency and accelerate film formation speed, and the quality of the silicon oxide film is relatively improved. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the TFT manufacturing method of the present invention adopting this silicon oxide film can form an oxide of tetraethyloxysilicate, even if N2O / SiH4 is used on the interlayer insulating film 37. Better quality step coverage. In addition, since the insulation withstand voltage is quite high, a N2O / SiH4 silicon oxide film can be used to form a highly reliable gateway insulating film 33. In this method, the commonly used siloxanes and nitrous oxides can be used as the main reaction gas, without using tetraethyloxysilicate gas. Therefore, the processing of the gas is simple and the cost is low, which can improve the yield of TFT and the paper size. This paper applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 16478158 A7 B7

V. Description of the invention (Production capacity. The technical scope of the invention printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs is not limited to the above application types, as long as they do not depart from the purpose of this creation, they can be changed and applied by themselves. The above applications Types of CVD film formation conditions listed »For reference only, you can make moderate adjustments. In addition, the TFT manufacturing method of the present invention is applicable to both upper and lower gate TFTs. Film formation using the above In the integrated plasma CVD device 1 formed by the method, the side wall of the housing 7 of the high-frequency electrode terminal matcher 9 is parallel to the power supply line. As shown in the fifth figure, the side wall of the device 47 of the high-frequency electrode terminal matcher 46 and the power supply line 48 It can be non-parallel. If such a plasma CVD device 49 is used, the high-frequency current flowing during power supply is non-parallel in the direction of the forward and return currents, which can prevent the inductance from increasing. Therefore, the energy use efficiency is more efficient. Improved, the film formation speed of the silicon oxide film is faster, and the film quality is better. The fifth figure and the first figure use the same symbols to explain the same constituent elements. [Explanation of the embodiment] Next, the present invention will be described.明 的 实施 例. (Please read the precautions on the back before you install this one hundred.

The paper size of the 1T line paper applies the Chinese National Standard (CNS) A4 specification (210X2911%) 478158 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs __ 二 卜 巧 充 丨 17 Example 1 uses a dual-frequency excitation equipped with a special matcher according to the present invention Type plasma CVD device to verify the film-forming effect of silicon oxide film. The sixth figure shows the use of a dual-frequency excitation type plasma CVD device to change the substrate bias power (rf2) applied to the base electrode. A graph showing the relationship between the flow rate ratio of (SiH4) and nitrous oxide (n2O) and the film formation speed. The horizontal axis of the sixth graph is the flow rate of N20 / siH4, and the vertical axis is the film-forming speed (A / min). The film formation conditions here are: the high-frequency power frequency applied to the high-frequency electrode is 13.56 MHz, the fixed power (rfl), the frequency of the substrate bias power applied to the base electrode is 16 MHz, and the substrate bias power ratio 33.3% (represented by □ symbol and solid line in the sixth graph), 50% (represented by 0 symbol and solid line in the sixth graph), 66.6% (represented by △ symbol and solid line in the sixth graph ). Other film formation conditions are a substrate temperature of 300 ° C and a pressure in the reaction chamber of 200pa. On the other hand, a conventional device (only applying high-frequency power of 13.56M 电力 ζ to a high-frequency electrode) was used to perform the same film-forming operation, and a comparison was made (the X symbol and the dashed line in the sixth figure indicate the paper size) Applicable to China National Standard (CNS) A4 specification (210X 297mm) is (Please read the precautions on the back page first)-Gutter 18 478158 A7 B7 Amendment Supplement V. Issue-Instructions ()). As shown in the sixth figure, in the comparative example, when the N20 / SiH4 flow ratio is in the range of 5 to 20, the film formation speed is only 1000 A / min or less, and in this embodiment, the substrate bias power ratio When the flow rate ratio of N20 / SiH4 is 5 and 33.3%, 50%, and 66.6%, respectively, the film-forming speed is about 2000 A / min. When the N20 / SiH4 flow rate ratio is 20 ', the film-forming speed is about 3700 A / min. Therefore, using the dual-frequency excitation type plasma CVD apparatus of the second embodiment, the film formation speed is much higher than that of the conventional apparatus. In addition, in the dual-frequency excitation-type electrical CVD apparatus of the second embodiment, the higher the N20 / SiH4 flow rate ratio, the faster the film formation speed. The higher the substrate bias power, the faster the film formation speed. (Please read the precautions on the back first, then this page)-Installation. Order printed by the staff of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by the cooperative [Example 2] Then apply a substrate bias power, and examine the insulation voltage of the silicon oxide film. Kind of change. The seventh figure is a graph showing the relationship between the substrate bias power ratio and the dielectric withstand voltage of the silicon oxide film when a dual-frequency excitation type plasma CVD device is used. The horizontal axis of the seventh graph is a substrate bias power ratio (%), and the vertical axis is an insulation withstand voltage (MV / cm). This paper is applicable to the standard (_CNS) A4 specification (210X2 $ mm 7 478158 A7 B7) V. Description of the invention (Amendment 丨 Supplement 19 Printed by the Intellectual Property Bureau Staff Consumer Cooperative of the Ministry of Economic Affairs The film formation conditions here are: The high-frequency power frequency on the frequency electrode is 40 · 68MHz, fixed high-frequency power (rfl), the substrate bias power frequency applied to the base electrode is h6MHz, and the substrate bias power ratio is 0%, 14.3%, 40% Other film-forming conditions are substrate temperature of 300 ° C and pressure in the reaction chamber of 200 Pa. The flow ratio of Shixi Methane and N2O is 15 and the mixed gas flow ratio of Shixi Jiaxuan and N2O is 46. % (Diluted with helium), the thickness of the silicon oxide film is more than 2000 A. The eighth figure shows the case where the substrate electrode is not biased with substrate bias power (rf2 = 0 \ V). The relationship between the flow rate ratio of nitrous oxide and the insulation withstand voltage of Shixi oxide film. The horizontal axis of the eighth figure is the flow-to-weight ratio of n20 / S1H4, and the vertical axis is the insulation withstand voltage (Mv / Cm). The conditions are as follows: the frequency of the high-frequency power applied to the high-frequency electrode is 13.56 MHz, and the fixed power (rfl). The film-forming conditions were as follows: the substrate temperature was 300 ° C, and the pressure in the reaction chamber was 200pa. The flow rate ratio of helium and silicon methane was fixed at 5% to change the Nβ flow rate. The thickness of the silicon oxide film was 2,000 people. As shown in the eighth figure, if the substrate bias power is not applied, (please read the precautions on the back before β page)

、 1T line This paper size is applicable to China National Standard (Cns) A4 specification (210X 297 male 1 478158 Α7 Β7

V. Description of the invention () The flow rate ratio of N2O / SiH4 is in the range of 5 to 10, and the insulation withstand voltage can be maintained above 10MV / cm. When the N20 / SiH4 flow ratio is 15, 20, the insulation fiscal pressure will drop to about 7 to 8 MV / cm. However, as shown in the seventh figure, when the N20 / SiH4 flow ratio is 15, if the substrate bias power ratio is applied to 14.3% and 40%, the insulation financial pressure dropped to about 7.7MV / cm will also rise to 9MV / cm. This proves that the application of substrate bias power can increase the absolute financial pressure of Shi Xi's oxide film. [Example 3] Next, it will be examined how the characteristics of the silicon oxide film change when the flow rate ratio of N20 / SiH4 changes. The ninth figure is the relationship between the N20 / SiH4 flow rate and the film formation speed of the silicon oxide film when a dual-frequency excitation plasma CVD device is used. At this time, the SiH4 flow rate ratio in the reaction gas is set to 10/0 (indicated by a □ symbol and a solid line in the ninth figure), 2% (indicated by a ○ symbol and a solid line in the ninth figure), 3 % (Represented by the △ symbol and the solid line in the ninth figure) 'to examine its flow ratio and film formation speed, respectively. The horizontal axis of the ninth figure is the N2O / SiH4 flow ratio. The vertical vehicle is the film formation speed (person / minute). This paper size applies to China National Standard (CNS) A4 specifications (210X297) — — · ΊΊ. Install-(Please read the precautions on the back before printing this page) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and printed by the Consumer Cooperative 21 478158 Α7 Β7 / Moonstone 1 Modified and supplemented by the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by the Consumer Cooperative of the V. Invention Description () The film formation conditions here are: the high-frequency power frequency applied to the high-frequency electrode is 40.68MHz, and the substrate The frequency of the bias power is 1.6MΗζ, and the substrate bias power ratio is 33.3%. Other film formation conditions are a substrate temperature of 300 ° C and a pressure in the reaction chamber of 200pa. On the other hand, a conventional device (only applying high-frequency power of 13.56 MHz to the high-frequency electrode) was used to perform the same film-forming operation, and a comparison was made (indicated by an X symbol and a dashed line in the ninth figure). The tenth figure is the relationship between the N2O / SiH4 flow ratio and the refractive index of the silicon oxide film. The horizontal axis of the tenth graph is the N20 / SiH4 flow ratio, and the vertical axis is the refractive index. The film formation conditions here are: the high-frequency power frequency applied to the high-frequency electrode is 40 · 68MΗζ, the frequency of the substrate bias power is 1.6MΗζ, and the substrate bias power ratio is 33.3%. Other film formation conditions are a substrate temperature of 300 ° C and a pressure in the reaction chamber of 200pa (indicated by the □ symbol and the solid line in the tenth figure). On the other hand, a conventional device (only applying high-frequency power of 13.56MHz to the high-frequency electrode) was used to perform the same film formation operation (please read the note on the back *-matter and then page 1 ^ 44) -installation-ordering This paper scale applies Chinese National Standards (CNS) mm) 22 478158 A7 B7 V. Description of the invention () and a comparison (indicated by the X symbol and dashed line in the tenth figure) 0 Employee Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs The printing is shown in the ninth figure. In the comparative example, when the N20 / SiH4 flow ratio is in the range of 5 to 50, the film formation speed is only between 500 and 1500 A / min. In this embodiment, the SiH4 flow ratios in the reaction gas are 1%, 2%, and 3%, respectively, and the film formation speed is much higher than that in the comparative example. Looking at the data of this embodiment, the larger the SiH4 flow rate ratio, the faster the film formation speed. When the SiH4 flow rate is 1, the film forming speed of about 3000 A / min will be accelerated to 6000 A / min when the flow rate is 3. Examining the siH4 flow rate data one by one, it can be found that in the relationship between the N2O / SiH4 flow rate and the film formation speed, if the NzO / SiH4 flow ratio is in the range of 0 to 10, the film formation speed tends to increase. When the N20 / SiH4 flow ratio is greater than 10, the film formation speed is maintained to a certain extent. Therefore, when using the dual-frequency excitation type plasma CVD apparatus of the present invention, to obtain better film formation speed stability and controllability, it is best to set the N20 / SiH4 flow ratio to 10 or more. As shown in the tenth figure, in the comparative example, when the N20 / SiH4 flow ratio is increased from 10 to about 50, the refractive index will be from about 2 degrees to the Chinese National Standard (CNS) A4 specification (210 /% 7 male 1) Please read · Read * Back. Side-of-Attention · Matters Rebinding Line 23 478158 A7 B7 "li V. Description of the invention () Gradually decreases. When the N20 / SiH4 flow ratio is 50, the refractive index will enter 1.4 to 1 for the first time Within the range of 5. The tenth figure is indicated by oblique lines. The refractive index range of 1.4 to 1.5 is the area where the logical structure of the sio2 is taken. If the refractive index is within this range, the film formed is indeed SiH2. Relative Here, in this application type, if the N20 / SiH4 flow ratio is in the range of 0 to 10, the refractive index will decrease rapidly. When the N2〇 / SiH4 flow ratio is 10, the refractive index will be between 1.4 and 1.5. Range, and then stabilize and maintain within this range. Therefore, when using this creative dual-frequency excitation plasma CVD device, if the N20 / SiH4 flow ratio is set to more than 10, a chemical structure with a chemical quantity can be formed. ; 5 Xi oxide film. (Please read the note of the first a-it ^^ 4 more pages) • Binding-Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs [Example 4] Finally, the method for forming a silicon oxide film according to the present invention will be described with other gases added to the main reaction gas. The effect of the film action. The eleventh figure is a dual-frequency excitation plasma CVD device, which is added in the main reaction gas N20 / SiH4 (indicated by the symbol □ and the solid line in the eleventh figure) and not added (in the eleventh figure). In the eleventh figure, the relationship between the flow rate ratio of N2O / SiH4 and the film formation speed of the Shixi oxide film is indicated by the 0 symbol and the solid line. At this time, the flow rate when helium is added is 800 sccm. The horizontal axis is the flow rate ratio of N20 / SiH4, and the paper size of the paper is applicable to the Chinese National Standard (CNS) A4 specification (210X ^ 7 mm) 24 478158 A7 B7 6η 6, ν correction 丨 supplement 丨 5. Description of the invention () The vertical axis is Film formation speed (A / min) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The film formation conditions here are: the high-frequency power frequency applied to the high-frequency electrode is 40.68MHz, and the frequency of the substrate bias power is 1 6MΗζ, the substrate bias power ratio is 33.3%. The film conditions are a substrate temperature of 300 ° C and a pressure in the reaction chamber of 200pa. The twelfth figure shows the addition of helium (indicated by the symbol □ and the solid line in the second figure) and the absence of The eleventh figure is represented by 0 symbol and solid line), the relationship between the flow rate ratio of N2〇 / SiH4 and the refractive index of Shixi oxide film. The horizontal axis of the twelfth figure is the flow rate ratio of N20 / SiH4, and the vertical axis is Refractive index. The film formation conditions here are as follows: the frequency of the high-frequency power applied to the high-frequency electrode is 40.68 MHz, the frequency of the substrate bias power is 1.6 MHz, and the substrate bias power ratio is 33.3%. Other film formation conditions are a substrate temperature of 300 ° C and a pressure in the reaction chamber of 200pa. As can be seen from the eleventh figure, if helium is added, when N20 / SiH4 (please read the note on the back side first, and then the page). Binding and Binding ---- This paper size applies the Chinese National Standard (CNS) A4 Specifications (210X 297 mm) 478158 A7 B7 25 25 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () When the flow ratio exceeds 10, the film formation speed will decrease rapidly. When helium with a flow rate of 800 sccm is added, the film formation speed of about 500 A / min can be maintained even when the N2O / SiH4 flow ratio exceeds 10. Therefore, even if gas is added and the flow rate ratio of N2O / SiH4 is changed, the high-speed film formation of the stone evening oxide film can maintain a stable state. It can be seen from the twelfth figure that compared with the addition of helium and without the addition of helium, the slope of the change in the N20 / SiH4 flow rate and the refractive index becomes smaller, and the N20 / SiH4 flow rate will enter the refractive index 1.4 from a smaller area To 1.5 (stoichiometric structure area). Therefore, from the point of view of the composition of the silicon oxide film, the addition of helium will improve the stability. From Example 1 to Example 4, it can be known that using this unique dual-frequency excitation type plasma CVD device and reaction gas (adding other gases such as helium to the main reaction gas with a N20 / SiH4 flow ratio greater than 10), Accelerate the film formation speed of the silicon oxide film and improve the insulation withstand voltage. The formed silicon oxide film is suitable for interlayer insulation films that require high step coverage, and gateway insulation films that require high reliability on the pressure-resistant surface. [Effects of the Invention] Based on the above, the present invention uses a double equipped with a special matching device (please read the notes on the back and front, and then the page).

1. The paper size of the 1T line is applicable to the Chinese National Standard (CNS) A4 specification (210 X & 7 mm) 478158 A7 B7 Amendment Supplement V. Description of the invention () Frequency-excitation plasma CVD device can improve energy efficiency and accelerate The film speed is accelerated by the application of substrate bias power, so the step coverage is good. Therefore, as with the tetraethyloxysilicate silicon oxide film, it is not suitable for use here. N20 / SiH4 silicon oxide film for interlayer insulation film is used for interlayer insulation film, which can also improve the quality of the film and the insulation withstand voltage. , The same applies to the gate insulation film. Therefore, it can solve many shortcomings of the tetraethyl oxysilicate silicon oxide film, such as the ease and cost of processing the raw material gas, and improve the yield of the thin film transistor. (Please read the precautions on the back before filling this page) ------- Order --------- Line. Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economics 26 This paper size applies to Chinese national standards (CNS) A4 size mo X 297 mm) 4 / ^ 158 month / jn Yu · Zheng added 'V. Description of the invention () [Simplified illustration of the figure] The first picture is a double film formed by a silicon oxide film forming method A schematic cross-sectional view of the frequency-excited plasma CVD apparatus. The second figure is a plan view of the specific structure of the trimmer capacitor in the same high-frequency electrode terminal matcher. The third figure is a sectional view taken along the line III-III of the second figure. The fourth diagrams A to C are process sequence diagrams of a TFT manufacturing method using a silicon oxide film formation method. The fifth figure is a cross-sectional view of another dual-frequency excitation type plasma CVD apparatus using the same film formation method. The sixth graph is a result graph of Example 1 of the present invention. When the substrate bias power ratio is changed, the relationship between the N20 / SiH4 flow rate and the film formation speed is shown. The seventh graph is a result graph of Example 2 of the present invention, and a graph showing the relationship between the substrate bias power ratio and the dielectric withstand voltage of the silicon oxide film. The eighth figure is a result chart of Example 2 of the present invention. When no substrate bias power is applied, the relationship between the N20 / SiH4 flow ratio and the silicon dielectric film withstand voltage is shown. The ninth figure is the result chart of Example 3 of the present invention, so that 27 paper sizes in the reaction gas are applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page ) 0 Order · -------- Line · Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 478158 A7 B7 Amendment V. Description of Invention ()

When the SiH4 flow rate changes, the relationship between the N20 / SiH4 flow rate and the film formation speed of the silicon oxide film is shown. The tenth figure is a result chart of Example 3 of the present invention, and the relationship between the N2O / SiH4 flow ratio and the refractive index of the silicon oxide film. The eleventh graph is a graph of the result of Example 4 of the present invention 'when the helium is added or not added to the main reaction gas, and the relationship between the flow rate ratio of N2O / SiH4 and the film-forming speed of the Shixi oxide film. The twelfth figure is a result chart of Example 4 of the present invention. The relationship between the N20 / SiH4 flow ratio and the refractive index of the silicon oxide film when helium is added or not added to the main reaction gas. The thirteenth figure is a TFT cross-sectional view of a conventional upper gate structure. ：; ------------- Order --------- ^ IAWI (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 28 This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 478158 A7 B7 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () Schematic component symbol description 1 Plasma CVD Device 2 reaction chamber 3 south frequency electrode 5 substrate to be processed 6 base electrode 7 housing 8, 16 integrated circuit 9 high frequency electrode terminal matcher 10 first high frequency power source Π base electrode terminal matcher 18 second high frequency power source 20 Trim capacitors 20a, 20b (of trimmer capacitors) electrode 33 gateway insulation film 37 interlayer insulation film 45 thin film transistor (please read the precautions on the back before filling this page) -IAW -------- ^- ------- ^ 1 ^ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

Claims (1)

6. Scope of patent application [Scope of patent application] • A method of making money in the oxygen domain, its special features: high-frequency electrode is connected to the first high-frequency power supply, and the high-frequency electrode terminal matching device is equipped to integrate the first high-frequency power supply Integrated circuit of impedance between the high-frequency electrode and the base electrode and the high-frequency electrode are in a relative position and connected to the second high-frequency power source to support the substrate to be processed; the base electrode terminal matching device is provided with an integrated circuit for integration The impedance between the second high-frequency power source and the base electrode; the method for forming the silicon oxide film uses a dual-frequency excitation type plasma CVD device, and an integrated circuit of a high-frequency electrode terminal matcher forms at least one trimmer capacitor. Two types of electrodes, one of which is a high-frequency electrode; the substrate to be processed is mounted on the base electrode, and high-frequency power is applied to the high-frequency electrode and the base electrode, respectively, in order to react the mixed gas flow rate of silicon methane and nitrous oxide in the reaction gas. A ratio of 10% to 50% causes it to generate a plasma, thereby forming a silicon oxide film on the substrate to be processed. 2. The film formation method / removal of the silicon oxide film as described in item 1 of the scope of the patent application, wherein the minimum flow rate ratio of the stone sintering and suboxidation is 10. The size of this paper is suitable for the standard (CNS) A4 (21 × 297 mm). The scope of the patent application is the film formation of the Shixi oxide film described in the first item of the patent scope. Among them, helium Any one of hydrogen, xenon, oxygen, argon, and nitrogen or a mixed gas is used as the other gas in the reaction gas. The method for forming a silicon oxide film according to item 1 of the scope of the patent application, wherein the frequency range of the high-frequency power on the high-frequency electrode is between 13.56 MHz and 100 MHz, and the high-frequency power on the base electrode is The frequency range is between 50kHz and 1.6MΗζ. According to the method for forming a silicon oxide film described in item 1 of the scope of the patent application, wherein a dual-frequency excitation type plasma CVD device is used, the side wall of the casing and the power supply line of the high-frequency electrode terminal matcher are non-parallel, and the side wall of the casing The power supply line is composed of a conductor having a power supply line and an integrated circuit. The power supply line sends high-frequency power from the first high-frequency power supply to the high-frequency electrode through the integrated circuit. A method for manufacturing a thin film transistor, comprising: forming a semiconductor layer on a substrate; exposing the substrate with a reactive gas to form a semiconductor layer on the semiconductor layer 478158 B8 C8 D8 ▽, applying a patent for a gated insulator 'wherein the reactive gas includes A mixed gas of silane and nitrous oxide with a flow rate of 1 () to 50%; forming a gate electrode on a gate insulator; forming a source region and a drain region in a semiconductor layer except the gate electrode; using a reactive gas pair Exposing the substrate to form an interspacing insulator on the substrate, wherein the reactive gas is a mixed gas containing silane and nitrous oxide with a flow rate of 10 to 50%; and forming a source electrode and a drain on the interstitial insulator Electrode. 7. The method according to item 6 of the scope of patent application, further comprising: forming a purification layer through the substrate; and forming a pixel electrode on the passivation layer. The method described in item 7 of the application, wherein the purification layer includes a nitrided layer. 9. If the method of applying for the scope of patent application item 6 / catholic method, in which the paper size standard (CNS) A4 (Please read the precautions on the back before filling this page) nnnn Order i I nn If • Line丨 — nn / · Six patent application scopes The edge layer includes a silicon nitride layer 10, for example, the sixth patent application scope includes a silicon oxide layer. The method according to the above item, wherein the gap 11, the patent application scope No. 6 Zhengsuo handle method, wherein the ratio of sub-oxidation in the mixed gas is at least 丨 0. 12. The method described in item 6 of the patent application, wherein the reaction body A further comprises any one or mixed gas selected from the group consisting of helium, gas, krypton, oxygen, argon, and nitrogen. 13. The method as described in item 6 of the scope of patent application, wherein the bulk layer is amorphous silicon. Wherein the semiconductor 14, the method described in item 6 of the scope of patent application, the bulk layer is polycrystalline silicon. Among them, the semiconducting 15, a plasma chemical vapor deposition (CVD) device, including 33 paper size Lai + ® National Standard (CNS) A4 regulations (21 ^ X 297 public love) (Please read the precautions on the back first (Fill in this page again) 6. The scope of the patent application: the first frequency power supply; the first electrode connected to the first frequency power supply; the first matcher Uatch box) includes a first matching circuit between the first frequency power supply and the first electrode; the second frequency The power source, the susceptor electrode connected to the base of the second frequency power source. The second matching device includes a second matching circuit between the second frequency power source and the base electrode. 16 The device of claim 15 in the patent scope, wherein the first matching circuit includes an adjustable capacitor. 17. The device according to item 1 of the scope of patent application, wherein the adjustable capacitor comprises: a shaft attached to the first electrode; an adjustable capacitor electrode attached to the shaft and arranged substantially parallel to the first electrode; and an insulating disk Depends on the axis and is arranged between the first electrode and the adjustable ___ 34 This button scale is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 Gongchu) 6. The scope of the patent application capacitor electrodes. 18. = Correction 15w ^, where the frequency of the electric power applied to the first-frequency electrode to the first-frequency electrode is between U.56 and ιΟΜΜζ. 19. The pain described in item 15 of the scope of the patent application ... 1 Where the frequency of the power applied to the second-frequency power source to the base electrode is between 50kHz and 1.6MZZ. 20, as claimed in the patent application No. 彳 ς j 苜 印 ·; 10, + strong sister ... Guan Di escaped from the 15 items, in which the frequency of the power applied to the first electrode from the frequency source to the first electrode is approximately η line 40 68MΗ2. ^ 27 · 12MIL · 2 The device described in item 15 of the patent scope, wherein the frequency of the power applied to the first-frequency power source to the first electrode is about which is applied to 22, such as the scope of patent application item 15 6MHz 之间。 The device described, 35 X 297 mm) 478158 A8SSD8 Six, patent application range The frequency of the power of the base electrode is between 50kHz to 1.6MHz. 23. The device according to item π of the patent application range, wherein the first matching device comprises: a housing having a side wall; and a feedwire connected between the first frequency power source and the first electrode, and A frequency power source supplies power to the first electrode; wherein the feed line is non-parallel to the sidewall. 24. The device according to item 23 of the scope of patent application, wherein the casing surrounds the feeder. 25. A method for manufacturing a thin film transistor, including a first frequency power source, a first electrode connected to the first frequency power source, a second frequency power source, a second electrode connected to the second frequency power source, and an inert gas. CVD chemical vapor deposition (CVD), the method includes: forming a semiconductor layer on the substrate; ______ 36 paper rule deleted _ — 1 1 -------- order -------- -Line (please read the precautions on the back before filling this page) 478158 A8B8C8D8 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. The scope of patent application Place the substrate on the second electrode of the CVD device; Power from the first frequency Applying power with a first frequency to the first electrode, when applying power with a second frequency to the second electrode from a second frequency power source, and when supplying a reactive gas to the substrate via the inert gas to form on the semiconductor layer Gate insulator; forming a gate electrode on the gate insulator; forming a source region and a drain region in the semiconductor layer; forming a gap insulator on the substrate; and forming a source on the gap insulator Electrode and drain electrode and individually contact with the source region and drain region. 26. The method as described in item 25 of the scope of patent application, wherein the reaction gas comprises a mixed gas of metamycin and nitrous oxide having a flow rate of 10 to 50%. 27. The method as described in item 26 of the scope of the patent application, wherein the ratio of emulsified sub-gas to crushed scorch in the mixed gas is at least M. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm). A " " '------ --_ > Patent application range 28, The method described in item 25 of the patent application range, wherein the printed gases of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs further include helium, hydrogen, xenon, oxygen, argon, nitrogen groups Any one or mixed gas selected from the family. 29. The method according to item 25 of the scope of patent application, wherein the semiconductor layer comprises an amorphous stone. 30. The method according to item 25 of the scope of patent application, wherein the semiconductor layer comprises polycrystalline spar. 31. The method according to item 25 of the scope of patent application, wherein the first frequency is between 13.56 MHz and 100 MHz. 32. The method according to item 25 of the scope of patent application, wherein the second frequency is between 50 kHz and 1.6 MHz. 33. The method as described in item 25 of the scope of patent application, in which the standard of the 38 frequency book recorder is used (⑶―Specifications ⑽χ Teag Chuchu) --- -___ (Please read the precautions on the back before filling this page) · Order --------- line— ^ 1! ..---------- 6. The scope of patent application is about 40. 68MHZ. 34. The method according to item 25 of the scope of patent application, wherein the first frequency is approximately 27 · 12 MHz. 35. The method of claim 25, wherein forming a gap insulator on a substrate comprises: placing the substrate on a second electrode of the CVD device; and applying power having a first frequency from a first frequency power source to a first An electrode, when a power having a second frequency is applied to the second electrode from a second frequency power source, and a reactive gas is provided to the substrate via the inert gas. 36. A method for manufacturing a thin film transistor, including a first frequency power source, a first electrode connected to the first frequency power source, a second frequency power source, a second electrode connected to the second frequency power source, and an inert gas. Plasma chemical vapor deposition (CVD) device, the method comprising: forming a semiconductor layer on a substrate; 999988 ABCD Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 478158 Forming the gate electrode on the gate insulator; In the semiconductor layer towel-shaped money pole area and the secret area; Placing the substrate on the second electrode of the CVD device; Application from the first frequency power supply Electric power having a first frequency to the first electrode 'When applied from a second-frequency power source, electric power having a second frequency to the second electrode' and when a reactive gas is provided to the substrate via the inert gas to pass through the substrate to form A gap insulator; and forming a source electrode and a non-electrode on the gap insulator and individually contacting the source region and the drain region. 37. The method according to item 36 of the application, wherein the reaction gas comprises a mixed gas of silane and nitrous oxide having a flow rate of 10 to 50%. 38. The method as described in item 37 of the scope of patent application, wherein the ratio of silicon dioxide to nitrous oxide in the 7-person gas is at least. This paper size is applicable to China National Standard (CNS) A4 (210 X 297 Public Love) '— 1] Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs / 、、 Applicable patent scope 39. The method described in item 36 of the patent scope, wherein the reaction gas further comprises any one or mixed gas selected from the group consisting of helium, krypton, xenon, oxygen, argon, and nitrogen. . 40. The method of claim 36 in the patent scope, wherein the semiconductor layer includes amorphous silicon. 1. The method as described in claim 36 of the patent application, wherein the semiconductor layer includes polycrystalline silicon. 42. The method according to item 36 of the scope of patent application, wherein the first frequency is between 13.56 MHz and 100 MHz. 43. The method as described in claim 36, wherein the second frequency is between 50 kHz and 1.6 MHz. 44. The method as described in item 36 of the scope of patent application, where-the paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) frequency (please read the precautions on the back before filling this page) 478158 A8 B8 C8 D8 VI. Patent application rate The rate is approximately 40 · 68MHz. 45. The method according to item 36 of the scope of patent application, wherein the first frequency is approximately 27.12 MHz. ------—— ——! · (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, J, nn ϋ · n fla— · — I mm an ·· I 1- 42 This paper applies Chinese national standards (CNS) A4 size (210 X 297 mm)