DE102019201438B4 - Verfahren zum Herstellen eines Substrats und System zum Herstellen eines Substrats - Google Patents

Verfahren zum Herstellen eines Substrats und System zum Herstellen eines Substrats Download PDF

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Publication number
DE102019201438B4
DE102019201438B4 DE102019201438.0A DE102019201438A DE102019201438B4 DE 102019201438 B4 DE102019201438 B4 DE 102019201438B4 DE 102019201438 A DE102019201438 A DE 102019201438A DE 102019201438 B4 DE102019201438 B4 DE 102019201438B4
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Prior art keywords
workpiece
modified
layer
regions
peripheral
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German (de)
English (en)
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DE102019201438A1 (de
Inventor
Karl Heinz Priewasser
Hitoshi Hoshino
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Disco Corp
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Disco Corp
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Priority to DE102019201438.0A priority Critical patent/DE102019201438B4/de
Priority to US16/751,937 priority patent/US11201126B2/en
Priority to CN202410535287.1A priority patent/CN118352440A/zh
Priority to CN202010078537.5A priority patent/CN111524804B/zh
Priority to TW111138362A priority patent/TWI849524B/zh
Priority to JP2020017355A priority patent/JP7135016B2/ja
Priority to TW109103393A priority patent/TWI783208B/zh
Priority to KR1020200013216A priority patent/KR102392426B1/ko
Priority to SG10202001021YA priority patent/SG10202001021YA/en
Publication of DE102019201438A1 publication Critical patent/DE102019201438A1/de
Priority to JP2022094669A priority patent/JP7500655B2/ja
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Publication of DE102019201438B4 publication Critical patent/DE102019201438B4/de
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/014—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7448—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01904—Manufacture or treatment of bond pads using temporary auxiliary members, e.g. using sacrificial coatings or handle substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Manufacturing & Machinery (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Manufacturing Of Printed Wiring (AREA)
DE102019201438.0A 2019-02-05 2019-02-05 Verfahren zum Herstellen eines Substrats und System zum Herstellen eines Substrats Active DE102019201438B4 (de)

Priority Applications (10)

Application Number Priority Date Filing Date Title
DE102019201438.0A DE102019201438B4 (de) 2019-02-05 2019-02-05 Verfahren zum Herstellen eines Substrats und System zum Herstellen eines Substrats
US16/751,937 US11201126B2 (en) 2019-02-05 2020-01-24 Method of producing a substrate and system for producing a substrate
CN202010078537.5A CN111524804B (zh) 2019-02-05 2020-02-03 生产衬底的方法以及生产衬底的系统
CN202410535287.1A CN118352440A (zh) 2019-02-05 2020-02-03 生产衬底的方法以及生产衬底的系统
JP2020017355A JP7135016B2 (ja) 2019-02-05 2020-02-04 基板を製造する方法、及び基板の製造用システム
TW109103393A TWI783208B (zh) 2019-02-05 2020-02-04 生產襯底的方法以及生產襯底的系統
TW111138362A TWI849524B (zh) 2019-02-05 2020-02-04 生產襯底的方法以及生產襯底的系統
KR1020200013216A KR102392426B1 (ko) 2019-02-05 2020-02-04 기판 제조 방법 및 기판 제조 시스템
SG10202001021YA SG10202001021YA (en) 2019-02-05 2020-02-05 Method of Producing a Substrate and System for Producing a Substrate
JP2022094669A JP7500655B2 (ja) 2019-02-05 2022-06-10 基板を製造する方法、及び基板の製造用システム

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102019201438.0A DE102019201438B4 (de) 2019-02-05 2019-02-05 Verfahren zum Herstellen eines Substrats und System zum Herstellen eines Substrats

Publications (2)

Publication Number Publication Date
DE102019201438A1 DE102019201438A1 (de) 2020-08-06
DE102019201438B4 true DE102019201438B4 (de) 2024-05-02

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Country Status (7)

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US (1) US11201126B2 (https=)
JP (2) JP7135016B2 (https=)
KR (1) KR102392426B1 (https=)
CN (2) CN118352440A (https=)
DE (1) DE102019201438B4 (https=)
SG (1) SG10202001021YA (https=)
TW (2) TWI849524B (https=)

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JP7024626B2 (ja) * 2018-06-27 2022-02-24 三菱電機株式会社 半導体装置、半導体装置の製造方法
US11295982B2 (en) * 2019-06-11 2022-04-05 International Business Machines Corporation Forming ultra-thin chips for flexible electronics applications
JP7604137B2 (ja) * 2020-09-04 2024-12-23 株式会社ディスコ ウエーハの加工方法
JP7542917B2 (ja) 2020-11-10 2024-09-02 株式会社ディスコ ウエーハの生成方法
US11996384B2 (en) 2020-12-15 2024-05-28 Pulseforge, Inc. Method and apparatus for debonding temporarily bonded wafers in wafer-level packaging applications
JP2024049656A (ja) * 2022-09-29 2024-04-10 株式会社デンソー 半導体装置とその製造方法
WO2025188114A1 (ko) * 2024-03-08 2025-09-12 웨이브로드 주식회사 핫 셀프스플릿 공정을 통한 고품질 그룹 3족 질화물 반도체를 위한 엔지니어드 성장기판 제작 방법
KR102923406B1 (ko) * 2024-03-08 2026-02-05 웨이브로드 주식회사 핫 셀프스플릿 공정을 통한 고품질 그룹 3족 질화물 반도체를 위한 엔지니어드 성장기판 제작 방법
DE102024118365A1 (de) * 2024-06-28 2025-12-31 Disco Hi-Tec Europe Gmbh Waferherstellungsverfahren

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Publication number Publication date
JP7135016B2 (ja) 2022-09-12
KR102392426B1 (ko) 2022-05-02
JP7500655B2 (ja) 2024-06-17
TWI849524B (zh) 2024-07-21
TW202100274A (zh) 2021-01-01
US11201126B2 (en) 2021-12-14
TW202322954A (zh) 2023-06-16
DE102019201438A1 (de) 2020-08-06
CN111524804B (zh) 2024-05-17
TWI783208B (zh) 2022-11-11
JP2022120112A (ja) 2022-08-17
SG10202001021YA (en) 2020-09-29
CN111524804A (zh) 2020-08-11
JP2020145418A (ja) 2020-09-10
US20200251431A1 (en) 2020-08-06
CN118352440A (zh) 2024-07-16
KR20200096743A (ko) 2020-08-13

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