JP7135016B2 - 基板を製造する方法、及び基板の製造用システム - Google Patents

基板を製造する方法、及び基板の製造用システム Download PDF

Info

Publication number
JP7135016B2
JP7135016B2 JP2020017355A JP2020017355A JP7135016B2 JP 7135016 B2 JP7135016 B2 JP 7135016B2 JP 2020017355 A JP2020017355 A JP 2020017355A JP 2020017355 A JP2020017355 A JP 2020017355A JP 7135016 B2 JP7135016 B2 JP 7135016B2
Authority
JP
Japan
Prior art keywords
workpiece
work
modified
layer
modified layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020017355A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020145418A5 (https=
JP2020145418A (ja
Inventor
カール、ハインツ、プリーワッサー
仁志 星野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of JP2020145418A publication Critical patent/JP2020145418A/ja
Publication of JP2020145418A5 publication Critical patent/JP2020145418A5/ja
Priority to JP2022094669A priority Critical patent/JP7500655B2/ja
Application granted granted Critical
Publication of JP7135016B2 publication Critical patent/JP7135016B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/014—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7448—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01904—Manufacture or treatment of bond pads using temporary auxiliary members, e.g. using sacrificial coatings or handle substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Manufacturing & Machinery (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Manufacturing Of Printed Wiring (AREA)
JP2020017355A 2019-02-05 2020-02-04 基板を製造する方法、及び基板の製造用システム Active JP7135016B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022094669A JP7500655B2 (ja) 2019-02-05 2022-06-10 基板を製造する方法、及び基板の製造用システム

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102019201438.0A DE102019201438B4 (de) 2019-02-05 2019-02-05 Verfahren zum Herstellen eines Substrats und System zum Herstellen eines Substrats
DE102019201438.0 2019-02-05

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2022094669A Division JP7500655B2 (ja) 2019-02-05 2022-06-10 基板を製造する方法、及び基板の製造用システム

Publications (3)

Publication Number Publication Date
JP2020145418A JP2020145418A (ja) 2020-09-10
JP2020145418A5 JP2020145418A5 (https=) 2021-11-25
JP7135016B2 true JP7135016B2 (ja) 2022-09-12

Family

ID=71615816

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2020017355A Active JP7135016B2 (ja) 2019-02-05 2020-02-04 基板を製造する方法、及び基板の製造用システム
JP2022094669A Active JP7500655B2 (ja) 2019-02-05 2022-06-10 基板を製造する方法、及び基板の製造用システム

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2022094669A Active JP7500655B2 (ja) 2019-02-05 2022-06-10 基板を製造する方法、及び基板の製造用システム

Country Status (7)

Country Link
US (1) US11201126B2 (https=)
JP (2) JP7135016B2 (https=)
KR (1) KR102392426B1 (https=)
CN (2) CN118352440A (https=)
DE (1) DE102019201438B4 (https=)
SG (1) SG10202001021YA (https=)
TW (2) TWI849524B (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017007586A1 (de) * 2017-08-11 2019-02-14 Siltectra Gmbh Fertigungsanlage zum Abtrennen von Wafern von Spendersubstraten
WO2019106846A1 (ja) * 2017-12-01 2019-06-06 日立化成株式会社 半導体装置の製造方法、仮固定材用樹脂組成物、及び仮固定材用積層フィルム
JP7024626B2 (ja) * 2018-06-27 2022-02-24 三菱電機株式会社 半導体装置、半導体装置の製造方法
US11295982B2 (en) * 2019-06-11 2022-04-05 International Business Machines Corporation Forming ultra-thin chips for flexible electronics applications
JP7604137B2 (ja) * 2020-09-04 2024-12-23 株式会社ディスコ ウエーハの加工方法
JP7542917B2 (ja) 2020-11-10 2024-09-02 株式会社ディスコ ウエーハの生成方法
US11996384B2 (en) 2020-12-15 2024-05-28 Pulseforge, Inc. Method and apparatus for debonding temporarily bonded wafers in wafer-level packaging applications
JP2024049656A (ja) * 2022-09-29 2024-04-10 株式会社デンソー 半導体装置とその製造方法
WO2025188114A1 (ko) * 2024-03-08 2025-09-12 웨이브로드 주식회사 핫 셀프스플릿 공정을 통한 고품질 그룹 3족 질화물 반도체를 위한 엔지니어드 성장기판 제작 방법
KR102923406B1 (ko) * 2024-03-08 2026-02-05 웨이브로드 주식회사 핫 셀프스플릿 공정을 통한 고품질 그룹 3족 질화물 반도체를 위한 엔지니어드 성장기판 제작 방법
DE102024118365A1 (de) * 2024-06-28 2025-12-31 Disco Hi-Tec Europe Gmbh Waferherstellungsverfahren

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016062949A (ja) 2014-09-16 2016-04-25 株式会社ディスコ ＳｉＣのスライス方法
JP2016111143A (ja) 2014-12-04 2016-06-20 株式会社ディスコ ウエーハの生成方法
JP2017041482A (ja) 2015-08-18 2017-02-23 株式会社ディスコ ウエーハの加工方法
JP2017195245A (ja) 2016-04-19 2017-10-26 株式会社ディスコ ＳｉＣウエーハの加工方法

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6071795A (en) 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
JP4659300B2 (ja) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
US8604383B2 (en) 2004-08-06 2013-12-10 Hamamatsu Photonics K.K. Laser processing method
KR101400699B1 (ko) 2007-05-18 2014-05-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기판 및 반도체 장치 및 그 제조 방법
US8927348B2 (en) * 2008-05-14 2015-01-06 Toyoda Gosei Co., Ltd. Method of manufacturing group-III nitride semiconductor light-emitting device, and group-III nitride semiconductor light-emitting device, and lamp
CN102326232B (zh) 2009-02-25 2016-01-20 日亚化学工业株式会社 半导体元件的制造方法
JP2011040564A (ja) * 2009-08-11 2011-02-24 Toshiba Corp 半導体素子の製造方法および製造装置
CN102792420B (zh) * 2010-03-05 2016-05-04 并木精密宝石株式会社 单晶衬底、单晶衬底的制造方法、带多层膜的单晶衬底的制造方法以及元件制造方法
TWI508327B (zh) 2010-03-05 2015-11-11 並木精密寶石股份有限公司 An internal modified substrate for epitaxial growth, a multilayer film internal modified substrate, a semiconductor device, a semiconductor bulk substrate, and the like
KR20110124112A (ko) 2010-05-10 2011-11-16 경희대학교 산학협력단 레이저 리프트 오프 공정을 이용한 플렉서블 ｃｉｓ계 태양전지의 제조 방법
JP5653110B2 (ja) 2010-07-26 2015-01-14 浜松ホトニクス株式会社 チップの製造方法
JP2013042119A (ja) * 2011-07-21 2013-02-28 Hamamatsu Photonics Kk 発光素子の製造方法
WO2013126927A2 (en) 2012-02-26 2013-08-29 Solexel, Inc. Systems and methods for laser splitting and device layer transfer
JP5887403B2 (ja) * 2012-04-27 2016-03-16 並木精密宝石株式会社 複合基板の製造方法、半導体素子の製造方法、複合基板および半導体素子
JP2014041924A (ja) 2012-08-22 2014-03-06 Hamamatsu Photonics Kk 加工対象物切断方法
JP6318900B2 (ja) * 2014-06-18 2018-05-09 日亜化学工業株式会社 半導体発光素子の製造方法
KR102753492B1 (ko) 2014-11-27 2025-01-14 실텍트라 게엠베하 재료의 전환을 이용한 고체의 분할
US9697989B2 (en) * 2015-02-26 2017-07-04 Taiwan Semiconductor Manufacturing Company Ltd. Method for generating parameter pattern, ion implantation method and feed forward semiconductor manufacturing method
DE102015006971A1 (de) 2015-04-09 2016-10-13 Siltectra Gmbh Verfahren zum verlustarmen Herstellen von Mehrkomponentenwafern
JP6478801B2 (ja) * 2015-05-19 2019-03-06 株式会社ディスコ ウエーハの加工方法
JP6265175B2 (ja) * 2015-06-30 2018-01-24 日亜化学工業株式会社 半導体素子の製造方法
JP6789675B2 (ja) * 2016-06-02 2020-11-25 ローム株式会社 半導体発光素子およびその製造方法
CN110691671B (zh) 2017-04-20 2023-10-10 西尔特克特拉有限责任公司 用于具有限定地定向的改性线的晶片制造的方法
JP6994852B2 (ja) 2017-06-30 2022-01-14 株式会社ディスコ レーザー加工装置及びレーザー加工方法
JP6957252B2 (ja) * 2017-07-20 2021-11-02 岩谷産業株式会社 切断加工方法
DE102017007586A1 (de) * 2017-08-11 2019-02-14 Siltectra Gmbh Fertigungsanlage zum Abtrennen von Wafern von Spendersubstraten
JP7217426B2 (ja) * 2019-02-22 2023-02-03 パナソニックＩｐマネジメント株式会社 レーザ加工装置およびレーザ加工方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016062949A (ja) 2014-09-16 2016-04-25 株式会社ディスコ ＳｉＣのスライス方法
JP2016111143A (ja) 2014-12-04 2016-06-20 株式会社ディスコ ウエーハの生成方法
JP2017041482A (ja) 2015-08-18 2017-02-23 株式会社ディスコ ウエーハの加工方法
JP2017195245A (ja) 2016-04-19 2017-10-26 株式会社ディスコ ＳｉＣウエーハの加工方法

Also Published As

Publication number Publication date
KR102392426B1 (ko) 2022-05-02
JP7500655B2 (ja) 2024-06-17
TWI849524B (zh) 2024-07-21
TW202100274A (zh) 2021-01-01
DE102019201438B4 (de) 2024-05-02
US11201126B2 (en) 2021-12-14
TW202322954A (zh) 2023-06-16
DE102019201438A1 (de) 2020-08-06
CN111524804B (zh) 2024-05-17
TWI783208B (zh) 2022-11-11
JP2022120112A (ja) 2022-08-17
SG10202001021YA (en) 2020-09-29
CN111524804A (zh) 2020-08-11
JP2020145418A (ja) 2020-09-10
US20200251431A1 (en) 2020-08-06
CN118352440A (zh) 2024-07-16
KR20200096743A (ko) 2020-08-13

Similar Documents

Publication Publication Date Title
JP7135016B2 (ja) 基板を製造する方法、及び基板の製造用システム
JP7319017B2 (ja) ウェハの処理方法
CN109417049B (zh) 处理背面上具有突出物的晶片的方法
JP7332095B2 (ja) 基板の処理法
TW201820447A (zh) 晶圓的加工方法
US12472581B2 (en) Method of processing a substrate and system for processing a substrate
JP7176058B2 (ja) 基板処理方法
KR102591912B1 (ko) 기판 처리 방법
US12094751B2 (en) Method of processing a substrate
JP2025040419A (ja) ワークピース支持体

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20200605

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20210430

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210604

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20210803

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20211004

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20220311

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220610

C60 Trial request (containing other claim documents, opposition documents)

Free format text: JAPANESE INTERMEDIATE CODE: C60

Effective date: 20220610

C876 Explanation why request for accelerated appeal examination is justified

Free format text: JAPANESE INTERMEDIATE CODE: C876

Effective date: 20220613

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20220613

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20220630

C21 Notice of transfer of a case for reconsideration by examiners before appeal proceedings

Free format text: JAPANESE INTERMEDIATE CODE: C21

Effective date: 20220701

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20220805

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20220831

R150 Certificate of patent or registration of utility model

Ref document number: 7135016

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250