DE102017114568B4 - Leistungshalbleitervorrichtung mit unterschiedlichen gatekreuzungen und verfahren zum herstellen davon - Google Patents

Leistungshalbleitervorrichtung mit unterschiedlichen gatekreuzungen und verfahren zum herstellen davon Download PDF

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DE102017114568B4
DE102017114568B4 DE102017114568.0A DE102017114568A DE102017114568B4 DE 102017114568 B4 DE102017114568 B4 DE 102017114568B4 DE 102017114568 A DE102017114568 A DE 102017114568A DE 102017114568 B4 DE102017114568 B4 DE 102017114568B4
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gate
semiconductor device
trenches
radius
regions
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DE102017114568A1 (de
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Cedric OUVRARD
Gerhard Nöbauer
Cesar Augusto Braz
Olivier Guillemant
Li Juin Yip
David Laforet
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Infineon Technologies Austria AG
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Infineon Technologies Austria AG
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Priority to KR1020180074724A priority patent/KR102528685B1/ko
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    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
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    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
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    • H01L21/823418—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
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    • H01L21/823456—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
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  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
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  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE102017114568.0A 2017-06-29 2017-06-29 Leistungshalbleitervorrichtung mit unterschiedlichen gatekreuzungen und verfahren zum herstellen davon Active DE102017114568B4 (de)

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Application Number Priority Date Filing Date Title
DE102017114568.0A DE102017114568B4 (de) 2017-06-29 2017-06-29 Leistungshalbleitervorrichtung mit unterschiedlichen gatekreuzungen und verfahren zum herstellen davon
US16/020,133 US10629595B2 (en) 2017-06-29 2018-06-27 Power semiconductor device having different gate crossings, and method for manufacturing thereof
KR1020180074724A KR102528685B1 (ko) 2017-06-29 2018-06-28 상이한 게이트 크로싱을 가진 전력 반도체 장치 및 그 제조 방법

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DE102017114568.0A DE102017114568B4 (de) 2017-06-29 2017-06-29 Leistungshalbleitervorrichtung mit unterschiedlichen gatekreuzungen und verfahren zum herstellen davon

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DE102017114568A1 DE102017114568A1 (de) 2019-01-03
DE102017114568B4 true DE102017114568B4 (de) 2021-11-25

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TWI689098B (zh) * 2019-01-30 2020-03-21 禾鼎科技股份有限公司 複合型溝槽式金氧半場效應電晶體及其製造方法
WO2021155943A1 (en) * 2020-02-07 2021-08-12 Infineon Technologies Austria Ag Transistor device and method of fabricating a transistor device
EP3913684A1 (en) 2020-05-20 2021-11-24 Infineon Technologies Austria AG Vertical semiconductor device comprising a lateral arrangement of gates and field plates and method of manufacturing the same
JP2022161688A (ja) * 2021-04-09 2022-10-21 富士電機株式会社 半導体装置
US20220416077A1 (en) * 2021-06-24 2022-12-29 Wolfspeed, Inc. Power semiconductor die with improved thermal performance
US11888060B2 (en) 2021-09-01 2024-01-30 Semiconductor Components Industries, Llc Power MOSFET with improved safe operating area

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DE102014112379A1 (de) 2014-08-28 2016-03-03 Infineon Technologies Austria Ag Halbleitervorrichtung mit einer Abschlussmesa zwischen einer Abschlussstruktur und einem Zellfeld von Feldelektrodenstrukturen
DE102015104988A1 (de) 2015-03-31 2016-10-06 Infineon Technologies Austria Ag Halbleitervorrichtung mit Gate-Finnen
DE102015117469A1 (de) 2015-10-14 2017-04-20 Infineon Technologies Austria Ag Verfahren zum herstellen einer halbleitervorrichtung mit grabengate durch verwenden einer screenoxidschicht

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US20190006357A1 (en) 2019-01-03

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