DE102016201608B4 - Halbleitervorrichtung und Halbleitermodul - Google Patents

Halbleitervorrichtung und Halbleitermodul Download PDF

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Publication number
DE102016201608B4
DE102016201608B4 DE102016201608.3A DE102016201608A DE102016201608B4 DE 102016201608 B4 DE102016201608 B4 DE 102016201608B4 DE 102016201608 A DE102016201608 A DE 102016201608A DE 102016201608 B4 DE102016201608 B4 DE 102016201608B4
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Germany
Prior art keywords
electrode
semiconductor device
region
probe
area
Prior art date
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Active
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DE102016201608.3A
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German (de)
English (en)
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DE102016201608A1 (de
Inventor
Hiroyuki Nakamura
Akira Okada
Eiji NOJIRI
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of DE102016201608A1 publication Critical patent/DE102016201608A1/de
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/273—Interconnections for measuring or testing, e.g. probe pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/301—Marks applied to devices, e.g. for alignment or identification for alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/501—Marks applied to devices, e.g. for alignment or identification for use before dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07521—Aligning
    • H10W72/07523—Active alignment, e.g. using optical alignment using marks or sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/985—Alignment aids, e.g. alignment marks

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Wire Bonding (AREA)
DE102016201608.3A 2015-02-17 2016-02-03 Halbleitervorrichtung und Halbleitermodul Active DE102016201608B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-028540 2015-02-17
JP2015028540A JP6476000B2 (ja) 2015-02-17 2015-02-17 半導体装置および半導体モジュール

Publications (2)

Publication Number Publication Date
DE102016201608A1 DE102016201608A1 (de) 2016-08-18
DE102016201608B4 true DE102016201608B4 (de) 2022-09-22

Family

ID=56305656

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102016201608.3A Active DE102016201608B4 (de) 2015-02-17 2016-02-03 Halbleitervorrichtung und Halbleitermodul

Country Status (4)

Country Link
US (1) US9722060B2 (https=)
JP (1) JP6476000B2 (https=)
CN (1) CN105679731B (https=)
DE (1) DE102016201608B4 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017179152A1 (ja) 2016-04-13 2017-10-19 オリンパス株式会社 半導体装置および半導体装置の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04239736A (ja) 1991-01-23 1992-08-27 Nec Corp 半導体装置の電極構造
US20060065969A1 (en) 2004-09-30 2006-03-30 Antol Joze E Reinforced bond pad for a semiconductor device
US20080093596A1 (en) 2006-10-23 2008-04-24 Ji-Young Shin Semiconductor Device and Method of Fabricating the Same
JP2014204038A (ja) 2013-04-08 2014-10-27 三菱電機株式会社 半導体装置及びその製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2919757B2 (ja) * 1994-11-14 1999-07-19 ローム株式会社 絶縁ゲート型半導体装置
US6576936B1 (en) * 1998-02-27 2003-06-10 Abb (Schweiz) Ag Bipolar transistor with an insulated gate electrode
JP2000269293A (ja) * 1999-03-18 2000-09-29 Fujitsu Ltd 半導体装置
JP4352579B2 (ja) * 2000-05-16 2009-10-28 沖電気工業株式会社 半導体チップ及びその製造方法
EP1513195A4 (en) * 2002-06-13 2009-06-24 Panasonic Corp SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
JP2004207556A (ja) * 2002-12-26 2004-07-22 Toshiba Corp 半導体装置とその製造方法
WO2004093191A1 (ja) * 2003-04-11 2004-10-28 Fujitsu Limited 半導体装置
JP4803966B2 (ja) * 2004-03-31 2011-10-26 ルネサスエレクトロニクス株式会社 半導体装置
JP2007103423A (ja) * 2005-09-30 2007-04-19 Renesas Technology Corp 半導体装置及びその製造方法
JP4915297B2 (ja) * 2007-06-22 2012-04-11 トヨタ自動車株式会社 半導体装置
JP5391447B2 (ja) * 2009-04-06 2014-01-15 三菱電機株式会社 半導体装置およびその製造方法
JP2012084561A (ja) * 2010-10-06 2012-04-26 Fujitsu Semiconductor Ltd 半導体装置およびその製造方法
JP5655705B2 (ja) * 2011-05-24 2015-01-21 住友電気工業株式会社 半導体装置
JP2014241309A (ja) * 2011-10-06 2014-12-25 株式会社村田製作所 半導体装置およびその製造方法
JP5564557B2 (ja) * 2012-12-26 2014-07-30 ルネサスエレクトロニクス株式会社 半導体装置
JP5715281B2 (ja) * 2014-04-18 2015-05-07 ルネサスエレクトロニクス株式会社 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04239736A (ja) 1991-01-23 1992-08-27 Nec Corp 半導体装置の電極構造
US20060065969A1 (en) 2004-09-30 2006-03-30 Antol Joze E Reinforced bond pad for a semiconductor device
US20080093596A1 (en) 2006-10-23 2008-04-24 Ji-Young Shin Semiconductor Device and Method of Fabricating the Same
JP2014204038A (ja) 2013-04-08 2014-10-27 三菱電機株式会社 半導体装置及びその製造方法

Also Published As

Publication number Publication date
CN105679731A (zh) 2016-06-15
JP2016152299A (ja) 2016-08-22
US20160240637A1 (en) 2016-08-18
DE102016201608A1 (de) 2016-08-18
US9722060B2 (en) 2017-08-01
JP6476000B2 (ja) 2019-02-27
CN105679731B (zh) 2019-04-16

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