DE102005016559A1 - Bildsensor mit einer Schutzschicht - Google Patents

Bildsensor mit einer Schutzschicht Download PDF

Info

Publication number
DE102005016559A1
DE102005016559A1 DE102005016559A DE102005016559A DE102005016559A1 DE 102005016559 A1 DE102005016559 A1 DE 102005016559A1 DE 102005016559 A DE102005016559 A DE 102005016559A DE 102005016559 A DE102005016559 A DE 102005016559A DE 102005016559 A1 DE102005016559 A1 DE 102005016559A1
Authority
DE
Germany
Prior art keywords
image sensor
sensor chip
chip according
protective layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102005016559A
Other languages
German (de)
English (en)
Inventor
Wen-Kun Yang
Chin-Chen Yang
Wen-Ping Yang
Wen-Bin Sun
Chou Chao-Nan
His-Ying Taoyuan City Yuan
Jui-Hsien Jhudong Township Chang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Chip Engineering Technology Inc
Original Assignee
Advanced Chip Engineering Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/025,746 external-priority patent/US7525139B2/en
Application filed by Advanced Chip Engineering Technology Inc filed Critical Advanced Chip Engineering Technology Inc
Publication of DE102005016559A1 publication Critical patent/DE102005016559A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)
DE102005016559A 2004-12-29 2005-04-08 Bildsensor mit einer Schutzschicht Withdrawn DE102005016559A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/025,746 2004-12-29
US11/025,746 US7525139B2 (en) 2004-04-28 2004-12-29 Image sensor with a protection layer

Publications (1)

Publication Number Publication Date
DE102005016559A1 true DE102005016559A1 (de) 2006-07-20

Family

ID=36643144

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102005016559A Withdrawn DE102005016559A1 (de) 2004-12-29 2005-04-08 Bildsensor mit einer Schutzschicht

Country Status (6)

Country Link
JP (1) JP2006190944A (zh)
KR (1) KR100725317B1 (zh)
CN (1) CN1797777A (zh)
DE (1) DE102005016559A1 (zh)
SG (1) SG123648A1 (zh)
TW (1) TWI251931B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101439311B1 (ko) * 2013-07-08 2014-09-15 (주)실리콘화일 웨이퍼의 패드 형성 방법
KR102487393B1 (ko) * 2016-04-15 2023-01-12 에스케이하이닉스 주식회사 라이트 필드 모드와 컨벤셔널 모드를 갖는 이미지 센서
CN108227050B (zh) * 2016-12-15 2020-11-13 日月光半导体(韩国)有限公司 光学芯片及其制造方法
US20200073019A1 (en) * 2018-09-04 2020-03-05 GM Global Technology Operations LLC Protective film for a lens of a sensor
CN109830492B (zh) * 2019-01-28 2021-05-14 深圳奥拦科技有限责任公司 Cob摄像头模组及其封装方法

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3513196A1 (de) * 1984-04-17 1985-10-17 Olympus Optical Co., Ltd., Tokio/Tokyo Festkoerper-bildsensor
DE2425392C2 (zh) * 1973-05-29 1989-08-24 General Electric Co., Schenectady, N.Y., Us
DE4139852A1 (de) * 1991-12-03 1993-06-09 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften Ev, 3400 Goettingen, De Optische einrichtung mit einem lumineszenten material und verfahren zu ihrer herstellung
US6307243B1 (en) * 1999-07-19 2001-10-23 Micron Technology, Inc. Microlens array with improved fill factor
DE19815899C2 (de) * 1998-03-05 2002-06-27 Samsung Electronics Co Ltd Festkörper-Farb-Abbildungsvorrichtung
US20020119605A1 (en) * 1999-04-28 2002-08-29 Teravicta Technologies, Inc. Reworkable encapsulant
KR20030016850A (ko) * 2001-08-22 2003-03-03 삼성전자주식회사 고체촬상소자 및 그 제조방법
DE10202513A1 (de) * 2002-01-23 2003-08-07 Infineon Technologies Ag Selbstreinigende Oberflächen für bildgebende Sensoren
KR20040006748A (ko) * 2002-07-15 2004-01-24 주식회사 하이닉스반도체 이미지센서 제조방법
EP1414077A2 (en) * 2002-10-25 2004-04-28 Hua Wei Semiconductor (Shanghai) Co., Ltd Method for making and packaging image sensor die using protective coating
US6821810B1 (en) * 2000-08-07 2004-11-23 Taiwan Semiconductor Manufacturing Company High transmittance overcoat for optimization of long focal length microlens arrays in semiconductor color imagers
WO2004102675A2 (en) * 2003-05-08 2004-11-25 Micron Technology, Inc. Multiple microlens system for image sensors or display units

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59198754A (ja) * 1983-04-26 1984-11-10 Toshiba Corp カラ−用固体撮像デバイス
US5239412A (en) * 1990-02-05 1993-08-24 Sharp Kabushiki Kaisha Solid image pickup device having microlenses
JPH0555535A (ja) * 1991-08-28 1993-03-05 Nec Corp 固体撮像素子およびその製造方法
US6221687B1 (en) * 1999-12-23 2001-04-24 Tower Semiconductor Ltd. Color image sensor with embedded microlens array
KR100533166B1 (ko) * 2000-08-18 2005-12-02 매그나칩 반도체 유한회사 마이크로렌즈 보호용 저온산화막을 갖는 씨모스이미지센서및 그 제조방법

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2425392C2 (zh) * 1973-05-29 1989-08-24 General Electric Co., Schenectady, N.Y., Us
DE3513196A1 (de) * 1984-04-17 1985-10-17 Olympus Optical Co., Ltd., Tokio/Tokyo Festkoerper-bildsensor
DE4139852A1 (de) * 1991-12-03 1993-06-09 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften Ev, 3400 Goettingen, De Optische einrichtung mit einem lumineszenten material und verfahren zu ihrer herstellung
DE19815899C2 (de) * 1998-03-05 2002-06-27 Samsung Electronics Co Ltd Festkörper-Farb-Abbildungsvorrichtung
US20020119605A1 (en) * 1999-04-28 2002-08-29 Teravicta Technologies, Inc. Reworkable encapsulant
US6307243B1 (en) * 1999-07-19 2001-10-23 Micron Technology, Inc. Microlens array with improved fill factor
US6821810B1 (en) * 2000-08-07 2004-11-23 Taiwan Semiconductor Manufacturing Company High transmittance overcoat for optimization of long focal length microlens arrays in semiconductor color imagers
KR20030016850A (ko) * 2001-08-22 2003-03-03 삼성전자주식회사 고체촬상소자 및 그 제조방법
DE10202513A1 (de) * 2002-01-23 2003-08-07 Infineon Technologies Ag Selbstreinigende Oberflächen für bildgebende Sensoren
KR20040006748A (ko) * 2002-07-15 2004-01-24 주식회사 하이닉스반도체 이미지센서 제조방법
EP1414077A2 (en) * 2002-10-25 2004-04-28 Hua Wei Semiconductor (Shanghai) Co., Ltd Method for making and packaging image sensor die using protective coating
WO2004102675A2 (en) * 2003-05-08 2004-11-25 Micron Technology, Inc. Multiple microlens system for image sensors or display units

Also Published As

Publication number Publication date
TW200623402A (en) 2006-07-01
JP2006190944A (ja) 2006-07-20
KR100725317B1 (ko) 2007-06-07
TWI251931B (en) 2006-03-21
SG123648A1 (en) 2006-07-26
CN1797777A (zh) 2006-07-05
KR20060076141A (ko) 2006-07-04

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