TW200623402A - Imagine sensor with a protection layer - Google Patents

Imagine sensor with a protection layer

Info

Publication number
TW200623402A
TW200623402A TW093141342A TW93141342A TW200623402A TW 200623402 A TW200623402 A TW 200623402A TW 093141342 A TW093141342 A TW 093141342A TW 93141342 A TW93141342 A TW 93141342A TW 200623402 A TW200623402 A TW 200623402A
Authority
TW
Taiwan
Prior art keywords
protection layer
image sensor
micro lens
imagine sensor
imagine
Prior art date
Application number
TW093141342A
Other languages
Chinese (zh)
Other versions
TWI251931B (en
Inventor
Wen-Kun Yang
Chin-Chen Yang
Wen-Ping Yang
Wen-Bin Sun
Chao-Nan Chou
His Ying Yuan
Jui Hsien Chang
Original Assignee
Advanced Chip Eng Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/025,746 external-priority patent/US7525139B2/en
Application filed by Advanced Chip Eng Tech Inc filed Critical Advanced Chip Eng Tech Inc
Application granted granted Critical
Publication of TWI251931B publication Critical patent/TWI251931B/en
Publication of TW200623402A publication Critical patent/TW200623402A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

Abstract

An image sensor die comprises a substrate and an image sensor array formed over the substrate. Micro lens are disposed on the image sensor array. A protection layer is formed on the micro lens to prevent the micro lens from particle containment.
TW093141342A 2004-12-29 2004-12-30 Imagine sensor with a protection layer TWI251931B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/025,746 US7525139B2 (en) 2004-04-28 2004-12-29 Image sensor with a protection layer

Publications (2)

Publication Number Publication Date
TWI251931B TWI251931B (en) 2006-03-21
TW200623402A true TW200623402A (en) 2006-07-01

Family

ID=36643144

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093141342A TWI251931B (en) 2004-12-29 2004-12-30 Imagine sensor with a protection layer

Country Status (6)

Country Link
JP (1) JP2006190944A (en)
KR (1) KR100725317B1 (en)
CN (1) CN1797777A (en)
DE (1) DE102005016559A1 (en)
SG (1) SG123648A1 (en)
TW (1) TWI251931B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101439311B1 (en) * 2013-07-08 2014-09-15 (주)실리콘화일 Method for forming pad of wafer
KR102487393B1 (en) * 2016-04-15 2023-01-12 에스케이하이닉스 주식회사 Image Sensor Having a Light Field Mode and a Conventional Mode
CN108227050B (en) * 2016-12-15 2020-11-13 日月光半导体(韩国)有限公司 Optical chip and method for manufacturing the same
US20200073019A1 (en) * 2018-09-04 2020-03-05 GM Global Technology Operations LLC Protective film for a lens of a sensor
CN109830492B (en) * 2019-01-28 2021-05-14 深圳奥拦科技有限责任公司 COB camera module and packaging method thereof

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL184756C (en) * 1973-05-29 1989-10-16 Gen Electric SEMICONDUCTOR DEVICE FOR DETECTING RADIATION.
JPS59198754A (en) * 1983-04-26 1984-11-10 Toshiba Corp Solid-state color image pickup device
JPS60233851A (en) * 1984-04-17 1985-11-20 Olympus Optical Co Ltd Solid-state image sensor
US5239412A (en) * 1990-02-05 1993-08-24 Sharp Kabushiki Kaisha Solid image pickup device having microlenses
JPH0555535A (en) * 1991-08-28 1993-03-05 Nec Corp Solid-state image pickup element and its production
DE4139852A1 (en) * 1991-12-03 1993-06-09 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften Ev, 3400 Goettingen, De OPTICAL DEVICE WITH A LUMINESCENT MATERIAL AND METHOD FOR THEIR PRODUCTION
KR100310102B1 (en) * 1998-03-05 2001-12-17 윤종용 Solid-state color imaging device and method for fabricating the same
US6306688B1 (en) * 1999-04-28 2001-10-23 Teravicta Technologies, Inc. Method of reworkably removing a fluorinated polymer encapsulant
US6307243B1 (en) * 1999-07-19 2001-10-23 Micron Technology, Inc. Microlens array with improved fill factor
US6221687B1 (en) * 1999-12-23 2001-04-24 Tower Semiconductor Ltd. Color image sensor with embedded microlens array
US6821810B1 (en) * 2000-08-07 2004-11-23 Taiwan Semiconductor Manufacturing Company High transmittance overcoat for optimization of long focal length microlens arrays in semiconductor color imagers
KR100533166B1 (en) * 2000-08-18 2005-12-02 매그나칩 반도체 유한회사 CMOS image sensor having low temperature oxide for protecting microlens and method for fabricating the same
KR20030016850A (en) * 2001-08-22 2003-03-03 삼성전자주식회사 Solid state image sensor and method of the same
DE10202513B4 (en) * 2002-01-23 2006-03-30 Infineon Technologies Ag Self-cleaning surfaces for imaging sensors
KR100877879B1 (en) * 2002-07-15 2009-01-12 매그나칩 반도체 유한회사 Method for fabricating image sensor
US6808960B2 (en) * 2002-10-25 2004-10-26 Omni Vision International Holding Ltd Method for making and packaging image sensor die using protective coating
US20040223071A1 (en) * 2003-05-08 2004-11-11 David Wells Multiple microlens system for image sensors or display units

Also Published As

Publication number Publication date
DE102005016559A1 (en) 2006-07-20
TWI251931B (en) 2006-03-21
JP2006190944A (en) 2006-07-20
KR20060076141A (en) 2006-07-04
SG123648A1 (en) 2006-07-26
CN1797777A (en) 2006-07-05
KR100725317B1 (en) 2007-06-07

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