CN1797777A - Imagine sensor with a protection layer - Google Patents
Imagine sensor with a protection layer Download PDFInfo
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- CN1797777A CN1797777A CNA2005100590211A CN200510059021A CN1797777A CN 1797777 A CN1797777 A CN 1797777A CN A2005100590211 A CNA2005100590211 A CN A2005100590211A CN 200510059021 A CN200510059021 A CN 200510059021A CN 1797777 A CN1797777 A CN 1797777A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
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Abstract
An image sensor die comprises a substrate and an image sensor array formed over the substrate. Micro lens are disposed on the image sensor array. A protection layer is formed on the micro lens to prevent the micro lens from particle containment.
Description
Technical field
The invention relates to a kind of image sensor (image sensor), particularly relevant for the method for a kind of image sensor structure and manufacturing thereof, this works can avoid the particle (particle) on the lenticule (micro lens) to pollute.
Background technology
Development of semiconductor is quick in the extreme, and particularly semiconductor grain (semiconductor dice) has the tendency that is tending towards miniaturization.Yet the demand of the function of semiconductor grain but has diversified relatively tendency.In other words, semiconductor grain in one than the zonule in the more I/o pad of demand (pads), so the density of pin (pins) also improves fast thereupon.It has caused the encapsulation of semiconductor grain to become more difficult and has reduced yield.The main purpose of encapsulating structure is to protect crystal grain to avoid outer damage.In addition, the heat that is produced by crystal grain is that must see through encapsulating structure efficiently disperses, to guarantee the running of crystal grain.Most of encapsulation technology is earlier crystal grain on the wafer to be partitioned into individual die, and then packaging and testing other crystal grain.In addition, the encapsulation technology of a kind of being called " wafer-level packaging " (WaferLevel Package:WLP) can encapsulate crystal grain cutting apart before crystal grain becomes individual die on a wafer.The wafer-level packaging technology has some advantages, for example the production cycle shorter, cost is lower and do not need filler (under-fill) or irritate mould encapsulation (molding).
A kind of digitized video technology is extensively used to image projection device, for example digital camera, image scanner etc.Traditional CMOS (Complementary Metal Oxide Semiconductor) (Complementary Metal-Oxide Semiconductor:CMOS) transducer is to place on the circuit board (circuit board).The CMOS (Complementary Metal Oxide Semiconductor) transducer has a chip (chip) and is fixed in wherein.Lens mount has a condenser lens, so that image is focused on the chip of CMOS (Complementary Metal Oxide Semiconductor) transducer.See through said lens, signal of video signal becomes digital signal by delivered to a digital processing unit by chip in order to converting analogue signals.The chip of CMOS (Complementary Metal Oxide Semiconductor) transducer is quite responsive for infrared ray (infrared ray) and dust particle.If unwanted particle does not remove from transducer, will cause the quality of assembly to descend.In order to achieve the above object, by injuring responsive chip by manual removing.Typically, image sensor module (module) is that the method for utilizing chip directly to encapsulate (Chip On Board:COB) or leadless chip carrier (Leadless Chip Carrier:LCC) forms.Chip is during directly a shortcoming of encapsulation is encapsulation process, owing to the particle pollution at sensing region reduces yield.In addition, the shortcoming of leadless chip carrier is the particle pollution of sensing region, so its packaging cost is higher and its yield is lower.
Moreover lenticule is the optics that is used as solid-state image assembly (solid state imaging devices) in the semiconductor.Design with make that most important in the lenticule what consider one is sensing optical activity (photosensitivity).The reason that the lenticule sensing optical activity may reduce is because each lenticular zone has been reduced to below the ideal value.In addition, SHELL CASE company also develops the wafer-level packaging technology, by the packaged image sensor crystal grain of SHELL CASE, owing to need two glass sheets and complex process, so its cost is higher.And, because the breakage (wearing out) of epoxides (epoxy) cause light transmittance not good, and its potential reliability will reduce.Announce in the U.S. the 5th on May 7th, 1996,514, No. 888 patents, chip screen type solid-state image sensors and manufacture method thereof (ON-CHIP SCREEN TYPESOLID STATE IMAGE SENSOR AND MANUFACTURINGMETHOD THEREOF), this patent is applied for that by people such as Yoshikazu Sano it is a kind of method that forms electric coupling assembly (charge-coupled devices:CCDS) on silicon base of teaching.One microlens array is to utilize traditional little shadow technology and backflow (re-flow) technology and be formed on the electric coupling assembly array.
Therefore, the present needed image sensor structure of a novelty that provides is to prevent the particle pollution on the sensing region.
Summary of the invention
Propose the present invention in view of above prior art problems, and the object of the present invention is to provide the method for a kind of image sensor grainiess and its manufacturing, it does not have particle pollution on lenticule.
A kind of image sensing crystal grain comprises a substrate and an image sensor arrays, and it is formed on the substrate.Lenticule places on the image sensor arrays.One protective layer (protection layer) has the characteristic of water proofing property (repellency) and grease proofness, is formed on the lenticule to prevent that lenticule is subjected to particle pollution.Preferably, protective layer is a low-index layer.Protective layer comprises polymethyl methacrylate (Polymethylmethacrylat:PMMA), rotary coating glass (Spinon Glass:SOG), Merlon (PolyCarbonate), fluorine macromolecule (Fluoropolymer), silicon dioxide and alundum (Al.Image sensor arrays comprises CMOS (Complementary Metal Oxide Semiconductor) or electric coupling assembly.Image sensor crystal grain more comprises a filter layer, is formed on the protective layer.Image sensor crystal grain more comprises a chromatic filter, is formed on the image sensor arrays.
Description of drawings
Fig. 1 is the schematic diagram that encapsulates according to of the present invention one parallel construction with two crystal grain;
Fig. 2 is the schematic diagram that encapsulates according to of the present invention one stack architecture with two crystal grain;
Fig. 3 is the schematic diagram according to an image sensor crystal grain of the present invention;
Fig. 4 is that a protective layer according to the present invention is formed at the schematic diagram on the lenticule.
The legend table of comparisons:
Video sensing crystal grain 201
First dielectric layer 205
Contact conductive layer 206
Second dielectric layer 207
Solder sphere 208
Insulated substrate 300
Video sensing crystal grain 301
Crystal grain 302
First dielectric layer 303
Second dielectric layer 304
Contact conductive layer 305a, 305b
Insulating barrier 306
Solder ball 307
Metal gasket 308,309
Attachment material 310a, 310b
The 3rd dielectric layer 311
Substrate 100
Sensing region 102
Insulating barrier 110
Chromatic filter layer 120
Red pixel zone 120R
Green pixel zone 120G
Blue pixel zone 120B
Layer 130
Lenticule 140
Protective layer 150
Filter course 160
Specific implementation method
At this, some embodiments of the present invention will at length be narrated.Yet, will be appreciated that except these clear and definite narrations, the present invention can be embodied among other embodiment of a broad range, and scope of the present invention not being limited to clearly in the foregoing description, it is when deciding on the patent claim of back.In addition, the parts of different assemblies do not show according to ratio.The size of above-mentioned associated components is extended, and insignificant part will not show, so that clearer narration of the present invention and understanding to be provided.
A kind of wafer level packaging structure, as shown in Figure 1.Above-mentioned encapsulating structure comprises: an insulated substrate 200, video sensing crystal grain 201 and crystal grain 202, first dielectric layer 205, second dielectric layer 207, contact conductive layer 206, insulating barrier 209 and solder sphere 208.The material of above-mentioned insulated substrate 200 can be glass, silicon, pottery magnetic or crystalline material or the like, and it has the shape of circle or rectangle.Above-mentioned video sensing crystal grain 201 is to encapsulate in mode arranged side by side with crystal grain 202.Above-mentioned video sensing crystal grain 201 and crystal grain 202 are to utilize a UV baking kenel material with good heat conductivity to toast kenel attachment material 203 with heat and be attached on the above-mentioned insulated substrate 200.Said first dielectric layer 205 is formed on the above-mentioned insulated substrate 200, and it is to fill up said first dielectric layer 205 outside above-mentioned video sensing crystal grain on the insulated substrate 200 201 and crystal grain 202.The material of said first dielectric layer 205 can be silica gel (Silicon rubber).
Said second dielectric layer 207 is formed on the above-mentioned video sensing crystal grain 201, and it has covered the photosensitive region of above-mentioned video sensing crystal grain 201.The material of said second dielectric layer 207 can be silicon dioxide (SiO
2), it is intended for the usefulness of protection mould (protection film).In addition, a filter layer (filtering film) can be formed on the said second dielectric layer 207 on the above-mentioned video sensing crystal grain 201.Above-mentioned filter layer (filtering film) for example is an infrared ray filter layer (IR filteringlayer), and it can be used for the usefulness of filtering.
On the metal gasket 210 that above-mentioned contact conductive layer 206 is formed at above-mentioned video sensing crystal grain 201 and the metal gasket 204 of crystal grain 202, to cover above-mentioned metal gasket 210 and metal gasket 204 fully.That is to say that above-mentioned contact conductive layer 206 is made electrical couplings with above-mentioned metal gasket 210 with metal gasket 204 respectively.The material of above-mentioned contact conductive layer 206 can comprise nickel (Ni), copper (Cu), gold (Au) and its combination.Above-mentioned metal gasket 210 for example is aluminium pad (Al pad) with metal gasket 204.Above-mentioned insulating barrier 209 is formed on the above-mentioned contact conductive layer 206, and above-mentioned insulating barrier 209 has opening and is formed on the above-mentioned contact conductive layer 206.The material of above-mentioned insulating barrier 209 can comprise epoxy layer (epoxy), resin or SINR (a kind of Siloxane polymer) or BCB.It 208 is to utilize the method for calcination and be formed on the above-mentioned opening that above-mentioned metal welding is received, make above-mentioned metal welding receive 208 respectively with above-mentioned contact conductive layer 206 couplings.Above-mentioned metal welding receives 208 for example for solder ball (solderballs) 208.
The kenel of above-mentioned crystal grain 202 can be selected from DSP crystal grain, initiatively (active) crystal grain, passive (passive) crystal grain, support (support) crystal grain, CPU crystal grain or processor (processor) crystal grain; And above-mentioned video sensing crystal grain 201 can be CMOS (Complementary Metal Oxide Semiconductor) video sensing crystal grain.Above-mentioned video sensing crystal grain 201 and crystal grain 202 are the encapsulation for parallel construction.
In addition, another kind of wafer level packaging structure, as shown in Figure 2.It is characterized in that adopting the construction of storehouse mode for chip.Above-mentioned encapsulating structure comprises: an insulated substrate 300, video sensing crystal grain 301 and crystal grain 302, first dielectric layer 303, second dielectric layer 304, the 3rd dielectric layer 311, contact conductive layer 305a, 305b, insulating barrier 306 and solder sphere 307.The material of above-mentioned insulated substrate 300 can be glass, silicon, pottery magnetic or quartz crystal materials or the like, and it has the shape of circle or rectangle.Above-mentioned video sensing crystal grain 301 is that mode with storehouse encapsulates with crystal grain 302.Above-mentioned crystal grain 302 is to utilize a UV baking kenel material with good heat conductivity to toast kenel attachment material 310a with heat and be attached on the above-mentioned insulated substrate 300.Said first dielectric layer 303 is formed on the above-mentioned insulated substrate 300, and it is to fill up said first dielectric layer 303 outside the above-mentioned crystal grain 302 on the above-mentioned insulated substrate 300.The material of said first dielectric layer 303 can be silica gel (Silicon rubber).
Above-mentioned contact conductive layer 305a is formed on the metal gasket 309 of above-mentioned crystal grain 302 to cover above-mentioned metal gasket 309 fully, and above-mentioned contact conductive layer 305a makes electrical couplings with above-mentioned metal gasket 309 respectively.Above-mentioned video sensing crystal grain 301 is to utilize a U V baking kenel material with good heat conductivity to toast kenel attachment material 310b with heat and be attached on the above-mentioned crystal grain 302.Said second dielectric layer 304 is formed on the said first dielectric layer 303, and it is to fill up said second dielectric layer 304 outside above-mentioned video sensing crystal grain 301, and said second dielectric layer 304 has interlayer hole 312 and is formed on the contact conductive layer 305a.The material of said second dielectric layer 304 can be silicon dioxide (SiO
2).
In addition, the 3rd dielectric layer 311 is formed on the above-mentioned video sensing crystal grain 301, and it has covered the photosensitive region of above-mentioned video sensing crystal grain 301.Yet, above-mentioned the 3rd dielectric layer 311 can not influence video sensing crystal grain 301 running.The material of above-mentioned the 3rd dielectric layer 311 can be silicon dioxide (SiO
2), it is intended for the usefulness of protection mould (protection film).In addition, a filter layer (filtering film) can be formed on above-mentioned the 3rd dielectric layer 311 on the above-mentioned video sensing crystal grain 301.Above-mentioned filter layer (filtering film) for example is an infrared ray filter layer (IRfiltering layer), and it can be used for the usefulness of filtering.
Above-mentioned contact conductive layer 305b fills up above-mentioned interlayer hole 312 and is formed on the metal gasket 308 of above-mentioned video sensing crystal grain 301 to cover this metal gasket 308 fully.That is to say that above-mentioned contact conductive layer 305b and above-mentioned metal gasket 308, contact conductive layer 305a make electrical couplings.The material of above-mentioned contact conductive layer 305a, 305b can comprise nickel (Ni), copper (Cu), gold (Au) and its combination.Above-mentioned metal gasket 308 for example is aluminium pad (Al pad) with metal gasket 309.Above-mentioned insulating barrier 306 is formed on the above-mentioned contact conductive layer 305b, and above-mentioned insulating barrier 306 has opening (not shown) and is formed on the above-mentioned contact conductive layer 305b.The material of above-mentioned insulating barrier 306 can comprise epoxy layer, resin and its combination.
It 307 is to utilize the method for welding and be formed on the above-mentioned opening that above-mentioned metal welding is received, above-mentioned metal welding receive 307 respectively with above-mentioned contact conductive layer 305b coupling.Above-mentioned metal welding receives 307 for example for solder ball (solder balls) 307.
The kenel of above-mentioned crystal grain 302 can be selected from DSP crystal grain, initiatively (active) crystal grain, passive (passive) crystal grain, support (support) crystal grain, CPU crystal grain or processor (processor) crystal grain; And above-mentioned video sensing crystal grain 301 can be CMOS (Complementary Metal Oxide Semiconductor) video sensing crystal grain.Above-mentioned video sensing crystal grain 301 and crystal grain 302 are the encapsulation for stack architecture.
Please refer to Fig. 3, microlens array 140 is formed on the silicon surface (top surfaces) usually.Substrate 100 a plurality of CMOS (Complementary Metal Oxide Semiconductor) assemblies of can in sensing region 102, growing up.Image sensor comprises an insulating barrier 110, is formed on the substrate 100.Then, a chromatic filter layer 120 is formed on the insulating barrier 100, and it has inferior pixel zone (sub-pixel areas) and suitably is aligned in the driving component in the substrate 100.Another layer (layer) 130 is formed on the colorized optical filtering 120 usually.Have the existing method that several are familiar with this field skill person, can then form microlens array.Lens-forming material layer 140 can apply to above-mentioned substrate.Be applicable to that material of the present invention comprises the mixture of melmac (melamine resin) and general phenolic group resin (genericnovolac based resin).The individual lenses zone is formed among the lens material layer 140 by by covering curtain exposure (masked exposure) and developing (developing).For example, a photoresistance (photoresist:PR does not show) is formed on the lens material layer 140.Traditional little shadow technology is by by utilizing exposure and development step to form pattern among photoresistance.Remove (stripped) photoresistance then.By by control time and temperature, (re-flow) lens 140 that reflux become suitable optics pattern with baking (baked) said modules.It is individual that other is red/and the inferior pixel of green/blue (RGB) zone 120R, 120G, 120B be aligned in respectively on the corresponding CMOS (Complementary Metal Oxide Semiconductor) assembly in the substrate 100, as be familiar with shown in the technology.
The invention provides a kind of video sensor component, as shown in Figure 3.The material of substrate 100 can be glass, semi-conducting material, pottery or quartz etc.In addition, a protective layer 150 can cover on the lenticule 140.The material of protective layer 150 comprises silicon dioxide or alundum (Al, and it is by being formed by rotary coating (spin coating).Moreover the material of protective layer 150 may be polymethyl methacrylate (PMMA), rotary coating glass (SOG), Merlon (PolyCarbonate) or fluoro containing polymers (Fluoropolymer).The THICKNESS CONTROL of protective layer 150 has influence on the function of CMOS (Complementary Metal Oxide Semiconductor) assembly less than below 0.5 micron to prevent it.In addition, protective layer 150 may comprise a filter layer 160, and infrared ray filter layer for example is formed on the protective layer 150 with as a filter, as shown in Figure 4.Protective layer 150 can prevent that lenticule is subjected to particle pollution.The user can use liquid or gas bleed, to remove the particle on protective layer 150 and can not hurt lenticule.Protective layer has water proofing property and/or grease proofness.Preferably, protective layer is to be a low-index layer.
One insulating barrier (not shown) is formed on the substrate 100, and having does not have the opening that covers the image sensor zone, is beneficial to sensing image.The epoxides that the material of insulating barrier can be selected, resin and its combination.
The present invention illustrates as above that with preferred embodiment so it is not in order to limit the patent right scope that the present invention advocated.Its scope of patent protection when on accompanying claim and etc. same domain decide.All skill persons who is familiar with this field, in not breaking away from this patent spirit or scope, change of being done or retouching all belong to the equivalence of being finished under the disclosed spirit and change or design, and should be included in the following claim.
Claims (10)
1. an image sensing component crystal grain is characterized in that, comprises:
One substrate;
The image sensing component array is formed on this substrate;
Lenticule places on this image sensing component array; And
One protective layer is formed on this lenticule, is subjected to particle pollution to prevent this lenticule.
2. image sensing component crystal grain as claimed in claim 1 is characterized in that, described this protective layer comprises polymethyl methacrylate, rotary coating glass, Merlon, fluoro containing polymers, silicon dioxide or alundum (Al.
3. image sensing component crystal grain as claimed in claim 1 is characterized in that, described this image sensing component array comprises CMOS (Complementary Metal Oxide Semiconductor) or electric coupling assembly.
4. image sensing component crystal grain as claimed in claim 1 is characterized in that, more comprises a filter layer and is formed on this protective layer.
5. image sensing component crystal grain as claimed in claim 4 is characterized in that, described this filter layer is the infrared ray filter coating.
6. image sensing component crystal grain as claimed in claim 1 is characterized in that, more comprises a colorized optical filtering assembly and is formed on this image sensing component array.
7. image sensing component crystal grain as claimed in claim 1 is characterized in that the material of described this substrate comprises glass.
8. image sensing component crystal grain according to claim 1 is characterized in that the material of described this substrate comprises semi-conducting material, pottery or quartzy.
9. image sensing component crystal grain as claimed in claim 1 is characterized in that, the thickness of described this protective layer is slightly less than 0.5 micron approximately.
10. image sensing component crystal grain as claimed in claim 1 is characterized in that, described this protective layer is a watertight composition, an anti-oil reservoir or a low-index layer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/025,746 | 2004-12-29 | ||
| US11/025,746 US7525139B2 (en) | 2004-04-28 | 2004-12-29 | Image sensor with a protection layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1797777A true CN1797777A (en) | 2006-07-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2005100590211A Pending CN1797777A (en) | 2004-12-29 | 2005-03-24 | Imagine sensor with a protection layer |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP2006190944A (en) |
| KR (1) | KR100725317B1 (en) |
| CN (1) | CN1797777A (en) |
| DE (1) | DE102005016559A1 (en) |
| SG (1) | SG123648A1 (en) |
| TW (1) | TWI251931B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108227050A (en) * | 2016-12-15 | 2018-06-29 | 日月光半导体(韩国)有限公司 | Optical chip and its manufacturing method |
| CN109830492A (en) * | 2019-01-28 | 2019-05-31 | 深圳奥拦科技有限责任公司 | COB camera module and its packaging method |
| CN110871603A (en) * | 2018-09-04 | 2020-03-10 | 通用汽车环球科技运作有限责任公司 | Protective film for a lens of a sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101439311B1 (en) * | 2013-07-08 | 2014-09-15 | (주)실리콘화일 | Method for forming pad of wafer |
| KR102487393B1 (en) * | 2016-04-15 | 2023-01-12 | 에스케이하이닉스 주식회사 | Image Sensor Having a Light Field Mode and a Conventional Mode |
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| DE4139852A1 (en) * | 1991-12-03 | 1993-06-09 | Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften Ev, 3400 Goettingen, De | OPTICAL DEVICE WITH A LUMINESCENT MATERIAL AND METHOD FOR THEIR PRODUCTION |
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- 2005-03-18 KR KR1020050022792A patent/KR100725317B1/en active IP Right Grant
- 2005-03-24 CN CNA2005100590211A patent/CN1797777A/en active Pending
- 2005-03-28 SG SG200501898A patent/SG123648A1/en unknown
- 2005-04-08 DE DE102005016559A patent/DE102005016559A1/en not_active Withdrawn
- 2005-06-09 JP JP2005169748A patent/JP2006190944A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108227050A (en) * | 2016-12-15 | 2018-06-29 | 日月光半导体(韩国)有限公司 | Optical chip and its manufacturing method |
| CN110871603A (en) * | 2018-09-04 | 2020-03-10 | 通用汽车环球科技运作有限责任公司 | Protective film for a lens of a sensor |
| CN109830492A (en) * | 2019-01-28 | 2019-05-31 | 深圳奥拦科技有限责任公司 | COB camera module and its packaging method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20060076141A (en) | 2006-07-04 |
| JP2006190944A (en) | 2006-07-20 |
| DE102005016559A1 (en) | 2006-07-20 |
| TWI251931B (en) | 2006-03-21 |
| KR100725317B1 (en) | 2007-06-07 |
| TW200623402A (en) | 2006-07-01 |
| SG123648A1 (en) | 2006-07-26 |
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