SG123648A1 - Imagine sensor with a protection layer - Google Patents
Imagine sensor with a protection layerInfo
- Publication number
- SG123648A1 SG123648A1 SG200501898A SG200501898A SG123648A1 SG 123648 A1 SG123648 A1 SG 123648A1 SG 200501898 A SG200501898 A SG 200501898A SG 200501898 A SG200501898 A SG 200501898A SG 123648 A1 SG123648 A1 SG 123648A1
- Authority
- SG
- Singapore
- Prior art keywords
- protection layer
- imagine sensor
- imagine
- sensor
- protection
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/025,746 US7525139B2 (en) | 2004-04-28 | 2004-12-29 | Image sensor with a protection layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG123648A1 true SG123648A1 (en) | 2006-07-26 |
Family
ID=36643144
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG200501898A SG123648A1 (en) | 2004-12-29 | 2005-03-28 | Imagine sensor with a protection layer |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP2006190944A (en) |
| KR (1) | KR100725317B1 (en) |
| CN (1) | CN1797777A (en) |
| DE (1) | DE102005016559A1 (en) |
| SG (1) | SG123648A1 (en) |
| TW (1) | TWI251931B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101439311B1 (en) * | 2013-07-08 | 2014-09-15 | (주)실리콘화일 | Method for forming pad of wafer |
| KR102487393B1 (en) * | 2016-04-15 | 2023-01-12 | 에스케이하이닉스 주식회사 | Image Sensor Having a Light Field Mode and a Conventional Mode |
| CN108227050B (en) * | 2016-12-15 | 2020-11-13 | 日月光半导体(韩国)有限公司 | Optical chip and method for manufacturing the same |
| US20200073019A1 (en) * | 2018-09-04 | 2020-03-05 | GM Global Technology Operations LLC | Protective film for a lens of a sensor |
| CN109830492B (en) * | 2019-01-28 | 2021-05-14 | 深圳奥拦科技有限责任公司 | COB camera module and packaging method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0124025A2 (en) * | 1983-04-26 | 1984-11-07 | Kabushiki Kaisha Toshiba | Solid-state color imaging device and process for fabricating the same |
| EP0441594A2 (en) * | 1990-02-05 | 1991-08-14 | Sharp Kabushiki Kaisha | Solid image pickup device having microlenses |
| JPH0555535A (en) * | 1991-08-28 | 1993-03-05 | Nec Corp | Solid-state image pickup element and its production |
| US6362498B2 (en) * | 1999-12-23 | 2002-03-26 | Tower Semiconductor Ltd. | Color image sensor with embedded microlens array |
| US6369417B1 (en) * | 2000-08-18 | 2002-04-09 | Hyundai Electronics Industries Co., Ltd. | CMOS image sensor and method for fabricating the same |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL184756C (en) * | 1973-05-29 | 1989-10-16 | Gen Electric | SEMICONDUCTOR DEVICE FOR DETECTING RADIATION. |
| JPS60233851A (en) * | 1984-04-17 | 1985-11-20 | Olympus Optical Co Ltd | Solid-state image sensor |
| DE4139852A1 (en) * | 1991-12-03 | 1993-06-09 | Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften Ev, 3400 Goettingen, De | OPTICAL DEVICE WITH A LUMINESCENT MATERIAL AND METHOD FOR THEIR PRODUCTION |
| KR100310102B1 (en) * | 1998-03-05 | 2001-12-17 | 윤종용 | Solid-state color imaging device and method for fabricating the same |
| US6306688B1 (en) * | 1999-04-28 | 2001-10-23 | Teravicta Technologies, Inc. | Method of reworkably removing a fluorinated polymer encapsulant |
| US6307243B1 (en) * | 1999-07-19 | 2001-10-23 | Micron Technology, Inc. | Microlens array with improved fill factor |
| US6821810B1 (en) * | 2000-08-07 | 2004-11-23 | Taiwan Semiconductor Manufacturing Company | High transmittance overcoat for optimization of long focal length microlens arrays in semiconductor color imagers |
| KR20030016850A (en) * | 2001-08-22 | 2003-03-03 | 삼성전자주식회사 | Solid state image sensor and method of the same |
| DE10202513B4 (en) * | 2002-01-23 | 2006-03-30 | Infineon Technologies Ag | Self-cleaning surfaces for imaging sensors |
| KR100877879B1 (en) * | 2002-07-15 | 2009-01-12 | 매그나칩 반도체 유한회사 | Method for fabricating image sensor |
| US6808960B2 (en) * | 2002-10-25 | 2004-10-26 | Omni Vision International Holding Ltd | Method for making and packaging image sensor die using protective coating |
| US20040223071A1 (en) * | 2003-05-08 | 2004-11-11 | David Wells | Multiple microlens system for image sensors or display units |
-
2004
- 2004-12-30 TW TW093141342A patent/TWI251931B/en active
-
2005
- 2005-03-18 KR KR1020050022792A patent/KR100725317B1/en active IP Right Grant
- 2005-03-24 CN CNA2005100590211A patent/CN1797777A/en active Pending
- 2005-03-28 SG SG200501898A patent/SG123648A1/en unknown
- 2005-04-08 DE DE102005016559A patent/DE102005016559A1/en not_active Withdrawn
- 2005-06-09 JP JP2005169748A patent/JP2006190944A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0124025A2 (en) * | 1983-04-26 | 1984-11-07 | Kabushiki Kaisha Toshiba | Solid-state color imaging device and process for fabricating the same |
| EP0441594A2 (en) * | 1990-02-05 | 1991-08-14 | Sharp Kabushiki Kaisha | Solid image pickup device having microlenses |
| JPH0555535A (en) * | 1991-08-28 | 1993-03-05 | Nec Corp | Solid-state image pickup element and its production |
| US6362498B2 (en) * | 1999-12-23 | 2002-03-26 | Tower Semiconductor Ltd. | Color image sensor with embedded microlens array |
| US6369417B1 (en) * | 2000-08-18 | 2002-04-09 | Hyundai Electronics Industries Co., Ltd. | CMOS image sensor and method for fabricating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI251931B (en) | 2006-03-21 |
| DE102005016559A1 (en) | 2006-07-20 |
| JP2006190944A (en) | 2006-07-20 |
| CN1797777A (en) | 2006-07-05 |
| KR20060076141A (en) | 2006-07-04 |
| TW200623402A (en) | 2006-07-01 |
| KR100725317B1 (en) | 2007-06-07 |
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