SG123648A1 - Imagine sensor with a protection layer - Google Patents

Imagine sensor with a protection layer

Info

Publication number
SG123648A1
SG123648A1 SG200501898A SG200501898A SG123648A1 SG 123648 A1 SG123648 A1 SG 123648A1 SG 200501898 A SG200501898 A SG 200501898A SG 200501898 A SG200501898 A SG 200501898A SG 123648 A1 SG123648 A1 SG 123648A1
Authority
SG
Singapore
Prior art keywords
protection layer
imagine sensor
imagine
sensor
protection
Prior art date
Application number
SG200501898A
Other languages
English (en)
Inventor
Wen-Kun Yang
Chin-Chen Yang
Wen-Ping Yang
Wen-Bin Sun
Chou Chao-Nan
His-Ying Yuan
Jui-Hsien Chang
Original Assignee
Advanced Chip Eng Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/025,746 external-priority patent/US7525139B2/en
Application filed by Advanced Chip Eng Tech Inc filed Critical Advanced Chip Eng Tech Inc
Publication of SG123648A1 publication Critical patent/SG123648A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
SG200501898A 2004-12-29 2005-03-28 Imagine sensor with a protection layer SG123648A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/025,746 US7525139B2 (en) 2004-04-28 2004-12-29 Image sensor with a protection layer

Publications (1)

Publication Number Publication Date
SG123648A1 true SG123648A1 (en) 2006-07-26

Family

ID=36643144

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200501898A SG123648A1 (en) 2004-12-29 2005-03-28 Imagine sensor with a protection layer

Country Status (6)

Country Link
JP (1) JP2006190944A (zh)
KR (1) KR100725317B1 (zh)
CN (1) CN1797777A (zh)
DE (1) DE102005016559A1 (zh)
SG (1) SG123648A1 (zh)
TW (1) TWI251931B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101439311B1 (ko) * 2013-07-08 2014-09-15 (주)실리콘화일 웨이퍼의 패드 형성 방법
KR102487393B1 (ko) * 2016-04-15 2023-01-12 에스케이하이닉스 주식회사 라이트 필드 모드와 컨벤셔널 모드를 갖는 이미지 센서
CN108227050B (zh) * 2016-12-15 2020-11-13 日月光半导体(韩国)有限公司 光学芯片及其制造方法
US20200073019A1 (en) * 2018-09-04 2020-03-05 GM Global Technology Operations LLC Protective film for a lens of a sensor
CN109830492B (zh) * 2019-01-28 2021-05-14 深圳奥拦科技有限责任公司 Cob摄像头模组及其封装方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0124025A2 (en) * 1983-04-26 1984-11-07 Kabushiki Kaisha Toshiba Solid-state color imaging device and process for fabricating the same
EP0441594A2 (en) * 1990-02-05 1991-08-14 Sharp Kabushiki Kaisha Solid image pickup device having microlenses
JPH0555535A (ja) * 1991-08-28 1993-03-05 Nec Corp 固体撮像素子およびその製造方法
US6362498B2 (en) * 1999-12-23 2002-03-26 Tower Semiconductor Ltd. Color image sensor with embedded microlens array
US6369417B1 (en) * 2000-08-18 2002-04-09 Hyundai Electronics Industries Co., Ltd. CMOS image sensor and method for fabricating the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL184756C (nl) * 1973-05-29 1989-10-16 Gen Electric Halfgeleiderinrichting voor het waarnemen van straling.
JPS60233851A (ja) * 1984-04-17 1985-11-20 Olympus Optical Co Ltd 固体イメ−ジセンサ
DE4139852A1 (de) * 1991-12-03 1993-06-09 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften Ev, 3400 Goettingen, De Optische einrichtung mit einem lumineszenten material und verfahren zu ihrer herstellung
KR100310102B1 (ko) * 1998-03-05 2001-12-17 윤종용 고체 컬러 이미지 소자 및 그의 제조 방법
US6306688B1 (en) * 1999-04-28 2001-10-23 Teravicta Technologies, Inc. Method of reworkably removing a fluorinated polymer encapsulant
US6307243B1 (en) * 1999-07-19 2001-10-23 Micron Technology, Inc. Microlens array with improved fill factor
US6821810B1 (en) * 2000-08-07 2004-11-23 Taiwan Semiconductor Manufacturing Company High transmittance overcoat for optimization of long focal length microlens arrays in semiconductor color imagers
KR20030016850A (ko) * 2001-08-22 2003-03-03 삼성전자주식회사 고체촬상소자 및 그 제조방법
DE10202513B4 (de) * 2002-01-23 2006-03-30 Infineon Technologies Ag Selbstreinigende Oberflächen für bildgebende Sensoren
KR100877879B1 (ko) * 2002-07-15 2009-01-12 매그나칩 반도체 유한회사 이미지센서 제조방법
US6808960B2 (en) * 2002-10-25 2004-10-26 Omni Vision International Holding Ltd Method for making and packaging image sensor die using protective coating
US20040223071A1 (en) * 2003-05-08 2004-11-11 David Wells Multiple microlens system for image sensors or display units

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0124025A2 (en) * 1983-04-26 1984-11-07 Kabushiki Kaisha Toshiba Solid-state color imaging device and process for fabricating the same
EP0441594A2 (en) * 1990-02-05 1991-08-14 Sharp Kabushiki Kaisha Solid image pickup device having microlenses
JPH0555535A (ja) * 1991-08-28 1993-03-05 Nec Corp 固体撮像素子およびその製造方法
US6362498B2 (en) * 1999-12-23 2002-03-26 Tower Semiconductor Ltd. Color image sensor with embedded microlens array
US6369417B1 (en) * 2000-08-18 2002-04-09 Hyundai Electronics Industries Co., Ltd. CMOS image sensor and method for fabricating the same

Also Published As

Publication number Publication date
KR100725317B1 (ko) 2007-06-07
CN1797777A (zh) 2006-07-05
KR20060076141A (ko) 2006-07-04
TW200623402A (en) 2006-07-01
DE102005016559A1 (de) 2006-07-20
TWI251931B (en) 2006-03-21
JP2006190944A (ja) 2006-07-20

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