DE102004028927B4 - Beschleunigungssensor - Google Patents
Beschleunigungssensor Download PDFInfo
- Publication number
- DE102004028927B4 DE102004028927B4 DE102004028927A DE102004028927A DE102004028927B4 DE 102004028927 B4 DE102004028927 B4 DE 102004028927B4 DE 102004028927 A DE102004028927 A DE 102004028927A DE 102004028927 A DE102004028927 A DE 102004028927A DE 102004028927 B4 DE102004028927 B4 DE 102004028927B4
- Authority
- DE
- Germany
- Prior art keywords
- acceleration sensor
- area
- frame
- sensor element
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000001133 acceleration Effects 0.000 claims abstract description 103
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 38
- 239000004065 semiconductor Substances 0.000 description 28
- 229910052751 metal Inorganic materials 0.000 description 20
- 239000002184 metal Substances 0.000 description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 230000008859 change Effects 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 238000005538 encapsulation Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000006023 eutectic alloy Substances 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000012549 training Methods 0.000 description 2
- 241001136792 Alle Species 0.000 description 1
- 108010053481 Antifreeze Proteins Proteins 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
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- 230000010485 coping Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
- B81B7/0051—Packages or encapsulation for reducing stress inside of the package structure between the package lid and the substrate
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P1/00—Details of instruments
- G01P1/02—Housings
- G01P1/026—Housings for speed measuring devices, e.g. pulse generator
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0109—Bonding an individual cap on the substrate
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
- G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
- G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003311066A JP2005077349A (ja) | 2003-09-03 | 2003-09-03 | 加速度センサ |
| JP2003/311066 | 2003-09-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE102004028927A1 DE102004028927A1 (de) | 2005-04-07 |
| DE102004028927B4 true DE102004028927B4 (de) | 2008-07-24 |
Family
ID=34214245
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102004028927A Expired - Fee Related DE102004028927B4 (de) | 2003-09-03 | 2004-06-15 | Beschleunigungssensor |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6988407B2 (enExample) |
| JP (1) | JP2005077349A (enExample) |
| KR (1) | KR100555617B1 (enExample) |
| CN (1) | CN100380129C (enExample) |
| DE (1) | DE102004028927B4 (enExample) |
| TW (1) | TWI234659B (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006125887A (ja) * | 2004-10-26 | 2006-05-18 | Fujitsu Media Device Kk | 加速度センサ |
| US7406870B2 (en) * | 2005-01-06 | 2008-08-05 | Ricoh Company, Ltd. | Semiconductor sensor |
| JP4839747B2 (ja) * | 2005-09-20 | 2011-12-21 | 三菱電機株式会社 | 静電容量型加速度センサ |
| JP4486103B2 (ja) * | 2007-03-19 | 2010-06-23 | Okiセミコンダクタ株式会社 | 加速度センサ、及び加速度センサの製造方法 |
| JP4922856B2 (ja) * | 2007-07-23 | 2012-04-25 | セイコーインスツル株式会社 | 気密パッケージ、角速度センサ及び気密パッケージの製造方法 |
| JP5446107B2 (ja) * | 2008-03-17 | 2014-03-19 | 三菱電機株式会社 | 素子ウェハおよび素子ウェハの製造方法 |
| JP5083247B2 (ja) * | 2008-11-13 | 2012-11-28 | 株式会社デンソー | 半導体装置およびその製造方法 |
| JP5547054B2 (ja) * | 2010-12-16 | 2014-07-09 | 日本航空電子工業株式会社 | 静電容量型加速度センサ |
| WO2012133087A1 (ja) * | 2011-03-30 | 2012-10-04 | 株式会社村田製作所 | 固体酸化物形燃料電池用接合材、固体酸化物形燃料電池及び固体酸化物形燃料電池モジュール |
| CN103063876B (zh) * | 2013-01-05 | 2014-08-20 | 中国科学院上海微系统与信息技术研究所 | 变面积型电容式横向加速度传感器及制备方法 |
| US10131540B2 (en) * | 2015-03-12 | 2018-11-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structure and method to mitigate soldering offset for wafer-level chip scale package (WLCSP) applications |
| WO2018003353A1 (ja) * | 2016-07-01 | 2018-01-04 | 株式会社デンソー | 半導体装置 |
| JP6729423B2 (ja) | 2017-01-27 | 2020-07-22 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法 |
| JP6922788B2 (ja) * | 2018-03-05 | 2021-08-18 | 三菱電機株式会社 | 半導体圧力センサ |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5121180A (en) * | 1991-06-21 | 1992-06-09 | Texas Instruments Incorporated | Accelerometer with central mass in support |
| US6441450B1 (en) * | 2000-10-20 | 2002-08-27 | Mitsubishi Denki Kabushiki Kaisha | Acceleration sensor and method of manufacturing the same |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FI81915C (fi) * | 1987-11-09 | 1990-12-10 | Vaisala Oy | Kapacitiv accelerationsgivare och foerfarande foer framstaellning daerav. |
| JP2000022169A (ja) * | 1998-06-29 | 2000-01-21 | Matsushita Electric Works Ltd | 半導体加速度センサ及びその製造方法 |
| JP2000187040A (ja) | 1998-12-22 | 2000-07-04 | Matsushita Electric Works Ltd | 加速度センサおよびその製造方法 |
| JP2001337103A (ja) | 2000-05-26 | 2001-12-07 | Matsushita Electric Works Ltd | 半導体加速度センサ |
| JP4156946B2 (ja) * | 2003-02-26 | 2008-09-24 | 三菱電機株式会社 | 加速度センサ |
-
2003
- 2003-09-03 JP JP2003311066A patent/JP2005077349A/ja active Pending
-
2004
- 2004-04-05 US US10/816,812 patent/US6988407B2/en not_active Expired - Fee Related
- 2004-04-13 TW TW093110193A patent/TWI234659B/zh not_active IP Right Cessation
- 2004-05-12 CN CNB2004100431437A patent/CN100380129C/zh not_active Expired - Fee Related
- 2004-06-14 KR KR1020040043725A patent/KR100555617B1/ko not_active Expired - Fee Related
- 2004-06-15 DE DE102004028927A patent/DE102004028927B4/de not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5121180A (en) * | 1991-06-21 | 1992-06-09 | Texas Instruments Incorporated | Accelerometer with central mass in support |
| US6441450B1 (en) * | 2000-10-20 | 2002-08-27 | Mitsubishi Denki Kabushiki Kaisha | Acceleration sensor and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| US6988407B2 (en) | 2006-01-24 |
| CN1591023A (zh) | 2005-03-09 |
| JP2005077349A (ja) | 2005-03-24 |
| KR20050025224A (ko) | 2005-03-14 |
| KR100555617B1 (ko) | 2006-03-03 |
| DE102004028927A1 (de) | 2005-04-07 |
| CN100380129C (zh) | 2008-04-09 |
| US20050044953A1 (en) | 2005-03-03 |
| TW200510727A (en) | 2005-03-16 |
| TWI234659B (en) | 2005-06-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8364 | No opposition during term of opposition | ||
| R084 | Declaration of willingness to licence | ||
| R084 | Declaration of willingness to licence | ||
| R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |